• Aucun résultat trouvé

Investigation of Polycrystalline silicon TFT’selectrical characteristics

N/A
N/A
Info
Télécharger
Protected

Academic year: 2021

Partager "Investigation of Polycrystalline silicon TFT’selectrical characteristics"

Copied!
1
0
0

Chargement.... (Voir le texte intégral maintenant)

Texte intégral

(1)

ICENT'17 2017

Investigation of Polycrystalline silicon TFT’s electrical characteristics

Hadjira Tayoub, Baya Zebentout, Zineb Benamara

Abstract : Low-temperature polycrystalline silicon thin film transistors (poly-Si TFT’s) on plastic substrate have been studied because of their high performance in Active Matrix Liquid Crystal Displays (AMLCD’s) and Active Matrix Organic Light-Emitting Diode (AMOLED) applications. The purpose of this work is to simulate the impact of varying the electrical and physical parameters (the interface states, active layer’s thickness and BBT model) in the transfer characteristics of poly-Si TFT to extract the electrical parameters like threshold voltage, mobility and to evaluate the device performance. The device was simulated using the ATLAS software from Silvaco. The results show that the electrical and physical parameters of poly-Si TFT affect significantly its transfer characteristics.

Keywords : Poly-Si TFT, TCAD-ATLAS, electrical characteristics

Centre de Recherche en Technologies Industrielles - CRTI - www.crti.dz

Powered by TCPDF (www.tcpdf.org)

Références

Télécharger maintenant ( PDF - 1 Page - 7.70 KB )

Documents relatifs

Investigation of Polycrystalline silicon TFT’s electrical characteristics

Figure 6 illustrates the effect of the interface states on the transfer characteristic of poly-Si TFT. In accumulation regime, the current is a little affected by the

Quasigeostrophic model of the instabilities of the Stewartson layer in flat and depth-varying containers

Stewartson (1957) has studied the stationary linear problem in the case of a split cylin- der rotating at Ω 0. Using an asymptotical method, he showed that the flow generated by

The purpose of this paper is to study the diagonal action of the unitary group

The unitary maps ϕ 12 will be very useful in the study of the diagonal action of U(2) on triples of Lagrangian subspaces of C 2 (see section 3).. 2.4

Demo: Applications of the CPAL language to model, simulate and program Cyber-Physical Systems

Interestingly, the same CPAL simulation model can be executed with no changes on an embedded target or a workstation to experiment on a test- bed later in the design process.. This

Dynamique des forêts tropicales de l'île de La Réunion : processus d'invasions et de régénération sur les coulées volcaniques

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

Les nouveautés thérapeutique du cancer de la prostate hormono-réfractaire: état de l’art

L’hormono-chimiothérapie de première ligne pour le traitement des CaP métastatiques hormono- et chimio-naïfs est le traitement standard en cas de cancers

ELLIPSOMETRIC INVESTIGATION OF THE SILICON / ANODIC-OXIDE INTERFACE

whereas, "ns similar for both forms at 8000A /lo/. Other than at 3190A, there is no prominent electroreflectance structure 1141 which might influence optical data under

INVESTIGATION INTO THE CONDUCTION MECHANISM OF CVD AMORPHOUS AND POLYCRYSTALLINE SILICON FILMS

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des