HAL Id: hal-01113263
https://hal.archives-ouvertes.fr/hal-01113263
Submitted on 4 Feb 2015
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Planar silicon CMOS technology silicon nanowires based
sensors
Laurent Pichon, Anne-Claire Salaün, Régis Rogel, Gertrude Wenga,
Emmanuel Jacques, Brice Le Borgne
To cite this version:
Laurent Pichon, Anne-Claire Salaün, Régis Rogel, Gertrude Wenga, Emmanuel Jacques, et al.. Planar silicon CMOS technology silicon nanowires based sensors. Réunion pleinière des GDR PULSE et GDR NANOFILS, Oct 2014, Toulouse, France. �hal-01113263�
Planar silicon CMOS technology silicon nanowires based sensors
Laurent PICHON, Anne Claire SALAÜN, Régis ROGEL, Gertrude WENGA, Emmanuel JACQUES, Brice Le Borgne
Institut d’Electronique et de Télécommunications de Rennes, Département Microélectronique et Microcapteurs, Université de Rennes 1, 263 avenue du général Leclerc, 35042 Rennes, France
Auteur contact : [email protected]
Mots clés : silicon nanowires, sensors, CMOS, silicon planar technology
Owing to their physical and electrical properties, silicon nanowires (SiNWs) are currently attracting much attention as promising components for future nanoelectronic devices such as nanowire field effect transistors, photovoltaic devices and bio-chemical sensors. The need of a fast and precise detection of early disease symptoms, as well as the need of environment safety, becomes now the main leitmotivs of the societal development. The incorporation of semiconductor nanowires into the chemical and biological sensor application receives a great interest. Thanks to their high surface to volume ratio, SiNWs are the subject of intense research activities because of their potential applications in sensing biological and chemical agents in solutions and gas environment.
Resistors and Field Effect Transistors based on polycrystalline SiNWs are fabricated using the classical top down CMOS silicon planar technologies. Nanowires are fabricated following the sidewall spacer formation technique [1]. Results show potential use as sensitive units of silicon nanowires for charged chemical species (ammonia, pH) detection. Devices are promising as low-cost manufacturing very high sensitive sensors.
0 100 200 300 400 500 600 700 800 0
2000 4000 6000 8000 10000 12000
Sg ( %)
NH3 concentration (ppm) suspended SiNWs grounded SiNWs Si thin film linear fit
Sensor responses versus different concentrations of NH3, for grounded SiNWs, suspended SiNWs, and thin film silicon
based resistors
4 5 6 7 8 9 1 0
0 ,6 0 ,8 1 ,0 1 ,2 1 ,4 1 ,6 1 ,8 2 ,0 2 ,2
VGS(V)
p H ID S=50nA
ID S=80nA ID S=100nA L in e a r fit ID S=50nA, R =0,97 L in e a r fit ID S=80nA, R =0,98 L in e a r fir ID S =100nA, R =0,96
pH sensitivity of a field effect transistor based on silicon nanowires
Références :
[1] F. Demami, L. Pichon, R. Rogel., A. C. Salaun, Materials Science and Engineering 2009, 6, 012014.
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