© by SEMIKRON 0898 B 5 – 43
1)Tcase = 25 °C, unless otherwise specified
3)IF = 300 A, VR = 100 V, –diF/dt = 100 A/µs
Absolute Maximum Ratings
ValuesSymbol Conditions 1) Units
VDS VDGR ID
IDM VGS PD Tj, (Tstg) Visol humidity climate
RGE = 20 k
Ω
Tcase = 25 °C / 80 °C Tcase = 100 °C 1 ms
AC, 1 min., 200 µA DIN 40 040 DIN IEC 68 T.1
100 100 400 / 300
250 1140
± 20 1040 –40 ... +150 (125)
2 500 Class F 40/125/56
V V A A A V W
°C V
Inverse Diode IF = –ID
IFM = –IDM 10 µs
380 1140
A A
Characteristics
Symbol Conditions 1) min. typ. max. Units
V(BR)DSS VGS(th) IDSS
IGSS3) RDS(on) gfs
VGS = 0, ID = 0,5 mA VGS = VDS, ID = 5 mA VGS = 0 Tj = 25 °C VDS = 100 V Tj = 125 °C VGS = 20 V, VDS = 0
VGS = 10 V, ID = 300 A VDS = 25 V, ID = 300 A
100 2,1 – – – – 150
– 3,0
– – – 3 200
– 4,0 100 1000
100 3,5
–
V V µA µA nA mΩ
S CCHC
Ciss Coss Crss LDS
VGS = 0 VDS = 25 V f = 1 MHz
– – – – –
– 24 7,3 4,3 –
700 32 11 6,5 20
pF nF nF nF nH td(on)
tr td(off) tf
VDD = 30 V ID = 250 A VGS = + 10 V RG = 4,7
Ω
– – – –
100 100 700 250
– – – –
ns ns ns ns Inverse Diode
VSD trr
Qrr IRR
IF = 300 A, VGS = 0 V Tj = 25 °C 3) Tj = 150 °C 3) Tj = 25 °C 3) Tj = 150 °C 3)
– – – – –
1,2 160 – 10
–
1,5 – – – –
V ns ns µC
Α Thermal characteristics
Rthjc Rthch
per MOSFET
M1, surface 10 µm, per module
– –
– –
0,12 0,038
°C/W
°C/W
Mechanical Data
M1
M2
a w
to heatsink, SI Units (M6) to heatsink, US Units
for terminals, SI Units (M6) for terminals, US Units
3 27 2,5 22 – –
– – – – – –
5 44
5 44 5x9,81
325
Nm lb.in.
Nm lb.in.
m/s2 g
Case → B 5 – 46 D 56
SEMITRANS
®M
Power MOSFET Modules 300 A, 100 V, 3,5 mΩ SKM 313 B 010
Features
• N Channel, enhancement mode
• Short internal connections and low inductance case avoid oscillations
• Isolated copper baseplate using Al2O3 ceramic Direct Copper Bonding Technology (DCB)
• All electrical connections on top for easy busbaring
• Large clearance (13 mm) and creepage distances (20 mm)
• UL recognized file no. E63 532
Typical Applications
• DC servo and robot drives
• DC choppers
• Battery vehicles
• UPS equipment
• Plasma cutting
• Not suitable for linear amplification
This is an electrostatic dischar- ge sensitive device (ESDS).
Please observe the international standard IEC 747-1, Chapter IX.
Suitable mounting hardware:
Ident No. 33321100 (for 10 SEMITRANS 3) Screws → B 6 – 4 SEMITRANS M3
© by SEMIKRON B 5 – 44
M313B 010.X L S -2
1 10 100 1000 10000
1 VDS 10 100 V 1000
ID
A
tp=10µs 100µs
1ms 10ms 100ms
RDSon=VDS/ID
DC
0 100 200 300 400 500 600 700 800
0 1 2 3 4 5 6 7 8
M313B 010.X LS- 4
A
ID
VGS V
0 50 100 150 200 250 300 350 400 450
0 20 40 60 80 100 120 140 160
M313B 010.X LS -6
A
ID
TCase °C
M313B 010.X L S -5
0 1 2 3 4 5 6 7 8 9 10
0 20Tj 40 60 80 100 120 °C140 160 RDS(on)
mΩ
98%
typ.
ID=250A VGS=10V
M313B 010.X L S -3
0 200 400 600 800 1000 1200
0 1 2 3 4 5 6
Ptot=1,04kW
4,0 4,5 5,0 5,5 6,0 6,5 7,0 8 7,5 9 VGS=2 10
VDS V
ID
A 15
M313B 010.X L S -1
0 0,2 0,4 0,6 0,8 1 1,2
0 TCase40 80 120 °C 160
PD
kW
Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 4 Transfer characteristic, tp = 80 µs, VDS = 25 V Fig. 1 Rated power dissipation vs. temperature Fig. 2 Maximum safe operating area, single pulse
Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature
Tjm = 150 °C Tc = 25 °C D = 0,01
0898
SKM 313 B 010
© by SEMIKRON 0898 B 5 – 45
M313B 010.X L S -14
0 1 2 3 4 5
-50 Tj 0 50 100 °C 150
VGS(th)
V
98%
typ.
2%
VDS=VGS
ID=1mA
M313B 010.X L S -11
0 100 200 300 400 500 600 700 800 900 1000
0 0,5VSD 1 1,5 2 2,5V 3 IF
A 150°C
25°C (98%)
typ
150°C (98%)
M313B 010.X L S -10
0 2 4 6 8 10 12 14 16
0 Qgls 1 2 3 µC 4
VG
V ID=250A
VDS=20V
VDS=80V
M313B 010.X L S -9
1 10 100 1000
0 VDS 10 20 30 40 V 50
C nF
Ciss
Coss
Crss
M313B 010.X LS - 8
0 50 100 150
0-di/dt 1 2 3 4kA/µs 5
VDS
V
M313B 010.X LS - 7
90 95 100 105 110 115
-50 TJ 0 50 100 °C 150
V(BR)DSS
V
Fig. 9 Typ. capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic, IDp = 250 A Fig. 7 Breakdown voltage vs. temperature Fig. 8 Drain-source voltage derating (LDS)
Fig. 11 Typ. Diode forward characteristic, tp = 80 µs Fig. 14 Gate-source threshold voltage
B 5 – 46 0898 © by SEMIKRON Fig. 52 Thermal impedance under pulse conditions
SEMITRANS M 3 Case D 56 SKM 313 B 010
Dimensions in mm
M313B010.XLS-52
0,0001 0,001 0,01 0,1 1
1E-05 0,0001 0,001 0,01 0,1 1 tp
s Zthjcp
°C/W D=
0,5 0,2 0, 0,0 0,0 0,0
single pulse
tp
tc
D=tp/tc=tp*f
