Avalanche robustness of SiC Schottky diode

According to our results, we can conclude that the effect of the contact diameter is remarkable on the Schottky electrical characteris- tics, while the contacts of small

Les caractéristiques de ces diodes à différentes températures montrent un comportement thermo-ionique en régime direct sans détérioration de l’interface (Fig

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However, the non-linear de- pendence of the terminal voltage on the feedback level due to abrupt transitions of the dynamical state across different regions of the phase-space has

The results show that the diode ideality factor and the threshold voltage decrease with increasing temperature, while at the same time, the zero-bias Schottky barrier height

The gravitational constant (also known as the "universal gravitational constant", the "Newtonian constant of gravitation", or the "Cavendish

MOSFET, Silicon Carbide (SiC), reliability, robustness, threshold voltage, intrinsic diode, diode-less, oxide