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HAL Id: jpa-00246800

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Submitted on 1 Jan 1993

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Scaling behavior of driven solid-on-solid models with diffusion

Martin Siegert, Michael Plischke

To cite this version:

Martin Siegert, Michael Plischke. Scaling behavior of driven solid-on-solid models with diffusion.

Journal de Physique I, EDP Sciences, 1993, 3 (6), pp.1371-1376. �10.1051/jp1:1993185�. �jpa-00246800�

(2)

Classification

Physics

Abstracts

61.50C 05.70C 68.22

Scaling behavior of driven solid-on-solid models with diffusion

Manin

Siegert

and Michael Plischke

Department

of

Physics,

Simon Fraser

University, Bumaby,

British Columbia, Canada VSA lS6

(Received J February 1993, accepted 9 February J993)

Abstract, We investigate a solid-on-solid model in which the interface of the

deposit

relaxes

through

a surface-diffusion process controlled

by

a local energy function and obeys detailed balance. We find that in the steady state the

dynamic

structure factor of the interface

obeys scaling

with exponents which,

remarkably,

are

equal

to those of the Edwards-Wilkinson model for sedimentation. Thus the interface fluctuations in two dimensions

diverge only logarithmically

and

are therefore much smaller than those of all

previously proposed

models. We discuss the relevance of these results to molecular beam

epitaxy.

Currently

there is considerable interest in the

modelling

of

growth

processes such as molecular beam

epitaxy (MBE)

in which the surface of the

growing

film relaxes

primarily through

diffusion of the

deposited particles.

This class of

growth

process

gives

rise to a much richer « kinetic

phase diagram

» than is found for the case of relaxation

through evaporation.

The latter processes seem to be well-described

by

the

Kardar-Parisi-Zhang (KPZ) equation [I],

which leads to the well-known

scaling

of the width of the interface

f(L, t) L' f(t/L~)

where

(at

least for one-dimensional

substrates)

the exponents ( and z can take on

only

two values

corresponding

to the two fixed

points

of the KPZ

equation.

In contrast to this

relatively simple situation, growth

models which do not allow

evaporation

of

particles (as

seems to be the case in MBE

growth

at low

temperatures) generally

lead to very

large

fluctuations of the interface

[2-4],

often with an

exponent

( m

I,

and to instabilities such as the spontaneous formation of a

pyramidal

structure

[4].

Vfhether or not either of these effects is relevant to

experiment

remains

to be understood.

Most of the discrete models studied to date use ad-hoc rules to model diffusion of

newly deposited particles.

In the Wolf-Villain model

[2]

the most

recently deposited particle

moves to

the nearest

neighbor

site with the

strongest binding.

The rest of the

deposit

is inert.

Similarly,

in the work of Das Sarma and Tamborenea

[3]

and Yan

[5] particles

are

only

allowed to move a

limited number of

steps and, again, only

the most

recently deposited particle

diffuses. The model of Kessler et al.

[6]

allows all

particles

that are not

fully

coordinated to move, but

only

to sites with a

larger

coordination number. In our

approach [4]

we have

adopted

the

point

of view that at least the entire

exposed

surface of the

growing

film must be allowed to

participate

in the relaxation process so

that,

in the absence of an

incoming flux,

the correct

equilibrium

state is obtained. We have considered a solid-on-solid model

(no

voids or

overhangs)

and have

(3)

1372 JOURNAL DE PHYSIQUE I N° 6

assumed that diffusion

along

the surface is driven

by

a local energy function. In

particular,

we

have used the

following

Hamiltonian :

H

=

J

£

[h~ h~ [~

(l)

<>.1>

where the sum extends over nearest

neighbor

sites of the

underlying

substrate and where n is an

integer

that we take to be

1,

2 or 4. Particles are

deposited randomly and,

between

deposition

events, the interface relaxes

by

the

hopping

of

particles

in the

exposed

parts of the

cluster, I-e-, particles hop

from the top of a

given

column, say I, to the top of a nearest

neighbor

column

Q)

at a rate

given by

W

=

r[exp(p AH(h,

-

h,

I, h~ - h~ + I

))

+

1]~

where AH is the

energy

change

due to this move and r is an

attempt frequency.

This process

obeys

detailed balance and results in the correct

equilibrium

state of model

(I)

if the

incoming

flux is set to

zero. It should be noted that the

equilibrium phase diagram

of model

(I)

does not

depend

qualitatively

on the parameter n

whereas,

as we discuss below, the

dynamics

is very sensitive to this

microscopic

detail.

In our

previous

work

[4]

we have

investigated

model

(I)

with n =

2 and n

=

4 in one dimension. We found that the n

=

2 model

displays qualitatively

the same behavior as other

previously investigated models, I-e-, scaling

of the width

f(L, t)

and the associated

height- height

correlation function. The

exponent

f is

roughly 1.2, indicating

that this model is

unphysical

in the sense that when fluctuations are of this

magnitude overhangs

and voids will

certainly play

a role and must be included in the

description

of the

growing

cluster.

Surprisingly,

for the n

=

4 model the

growth

process is unstable and the

deposit

evolves toward a

steady

state with a broken symmetry,

I-e-,

a

pyramid-

or

sandpile-like shape

of the

interface.

Superimposed

on this ordered state are the usual

long-wavelength

fluctuations which scale with exponents

indistinguishable,

for our system

sizes,

from those of the n

=

2 model.

This

instability

exists also for two-dimensional substrates and will form the

subject

of a separate detailed

study [7].

In this article we report our results for model

(I)

with n

= I for one- and two-dimensional substrates.

Although

identical to the other models in terms of its

equilibrium phase diagram,

the n

= I model is

quite

different when driven

by

a non-zero flux of

incoming particles.

Our main conclusions are the

following

:

(ii

the exponents y and z

obey

the

scaling

relation

[2]

Y = z with y

=

2 in both one and two dimensions at all temperatures ;

(it)

because the exponent y which characterizes the

divergence of

the

steady-state

structure

factor

at small k is related to the

surface roughening

exponent (

through

(

=

(y d)/2,

the width

ofthe interface diverges only logarithmically for

two-dimensional

substrates,

in contrast to all

previously proposed

models

;

(iii)

the

instability

seen in the n

= 4 model is absent in the n

= I model

(iv)

at low

enough

temperatures the width

of

the

inte~fiace of

the n ;

=

I model is small

enough

that the

growth

process is

essentially equivalent

to

layer-by-layer growth,

even

for extremely

thick

films.

We now

proceed

to document and discuss these results.

We have carried out

computer

simulations for model

ill

with one- and two-dimensional

(square lattice)

substrates. Particles are

deposited

at random and between

depisition

events the film relaxes

through

the diffusion process described above. We have used

periodic boundary

conditions and have

investigated

this model for a range

of-temperatures

both above and below the

roughening

temperature

[8]

in two dimensions. The average

deposition

rate was set at one tenth of the diffusion

attempt-frequency-

We have also carried out a few simulations for

a

deposition

rate of one fifth of the diffusion

attempt-frequency

and found no

change

in behavior. We characterized the

steady

state of our

deposits primarily through

the behavior of the

height-height

correlation function and its Fourier transform. We define the function

4l(k, t)

to be

(4)

4l

(k, t)

= lim

(h(k,

t +

r) h(-

k, r

)) (2)

where

h(k, t)

=

L~~~ £h(r, t)e'~~,

the sum extends over the sites of the d-dimensional substrate and h

(r,

t

)

is the

height

measured in the

co-moving

frame. For t

=

0 this function

[9]

is the

steady-state

structure factor

S(k) and,

for small

k,

has the

scaling

form

4l(k, t)

=

k~ Y C (k~

t).

In

figures

I and 2 we show the function

S(k)

in one and two dimensions. In the simulations the entire surface was

updated (deposition

or

diffusion)

20 L~ times in order to reach the

steady

~e

- 0~ T~0

~

'

tJ~

~

T~J/2k~

0

o L=512

D L=256

O L=128

o.oi

o.ooi o.oi o-i o.5

k/1c

Fig.

I.- The

steady-state

structure factor S(k) for the n =1 model in one dimension for two

temperatures. Here k = 2 «j/L with j

= 1, 2, The data for T

= J/2 k~ have been scaled by a factor of 1/20 in order to attain

separation

of the two

plots.

Statistical errors are less than I fG. The

straight

lines are fits to the form S(k)

=

Ak~~

o~

o L=128

_10~

~

° Lm64

$

T=2J/k

~ ~ ~~

1000

~ ~ L~16

T=o i o o

io

i

o.oi o-i o.5

Fig.

2. The

steady-state

structure factor S(k) for the n

=

I model in two dimensions at T

= 0 and at a

temperature above the

equilibrium roughening

temperature. In order to reduce statistical errors we have taken S(k) = 0.5 [S(k~, k~) +

S(k~,

k~Ii for k

= (k~ +

()"~

with k~ = 2

«j/L,

j = 1, 2, The

straight

lines are fits to the form S(k

= Ak~~

Except

for the smallest k for L

= 128, statistical errors are less than I fb.

(5)

1374 JOURNAL DE

PHYSIQUE

I N° 6

state. Data was then collected for another 20 L~

updates

per

sample. Except

for the

largest

system

(128

x 128 at T

=

0,

35

samples)

we have data from several hundred

samples.

In the

figures

we see, for small

enough k,

an

asymptotic power-law

behavior with an exponent very close to y = 2. This is most evident at T

= 0 where the

asymptotic

behavior is well established

in both one and two dimensions for the smallest values of k for substrates as small as

L

= 128. We note that in two dimensions the value T

=

2J/kB

is

considerably

above the

roughening

temperature

[8]

and it seems that this

equilibrium

transition is not reflected in the

non-equilibrium steady

state of the n

=

I model.

Figures

3 and 4 show the function C (k~ t

=

4l

(k, t)/S(k)

for several values of k in one dimension and for two different substrate sizes and several values of k in two dimensions. It is clear that the choice z

= 2

provides

an excellent

collapse

of the data to a universal curve over a

+ L=256, k

0.8 x L~256, k~

-

O Lm256, k~

~$ ~

& L~256, k~

i~

~ o L~256, k~

~i

'

~i 0.4

i~

0.2

o

O 2 3 4 5

(kin)?

t

Fig.

3. The scaling function C (k~ t)in the T

=

o steady state of the one-dimensional n

= I model for

a substrate of length L

=

256 for the five smallest k-vectors,

plotted

as a function of the scaled variable k~ t. In this

figure

and in

figure

4, time is measured in number of monolayers deposited.

o L=64, k

_ a L=64, ~

~$

0.8

o L=64, k~

it

x L=64, k~

~i

+ L=64,

k(

fli

°.6

a L=32, k

e '

0,4

0.2

0 DA 0.8 1.2 1.6 2

(k/1c)~

t

Fig.

4. The

scaling

function C (k~ t) for two-dimensional substrates of size 32 x 32 and 64 x 64 for several of the smallest values of k at T

=

o.

(6)

substantial range of the function C. We

conclude,

that z

= 2.0 ± 0. I

independent

of substrate

dimensionality and,

as

well,

that z and y

obey

the

scaling

relation

[2]

z

= y. We

emphasize

that these results are

substantially

different from those found for all

previously proposed

models

[2-6]

which have either

yielded

values of z and y much closer to 4 than to 2 or the exponents of the KPZ

equation.

We now discuss our results in the context of a continuum

Langevin equation

which

should,

in

principle,

be

capable

of

describing

the

scaling

behavior of this class of models.

Since the diffusive

part

of the

growth

process is the same as for

equilibrium dynamics,

we

expect

that the

appropriate Langevin equation

in the

comoving

frame of reference will be of the form

[4,10]

3~h(r, ti

= v~ Ah

(r, t)

+

Ail

+

(Vhi~i"~ j ~~j)~i

+ 1~

(r, ti (31

where

J

is the

Laplace-Beltrami

operator and F

[Vh

the free energy functional of the surface.

The noise function

7~

(r,

t represents fluctuations in the

incoming

flux and is nonconservative.

The coefficient v~ of the

Laplacian

term is

normally expected

to be zero. However, Villain I I

], starting

from a

microscopic picture

of

step-motion, argued

that v~ can be

negative

if there is «diffusion bias »

(Schwoebel

effect

[12]).

Such diffusion bias, I-e-, the

repulsion

of

particles

from the

edge

of a downward

step,

exists in the n = 2 and n

=

4 models but not in the

n = I model.

Beginning

with the

Langevin equation (3),

Golubovic and Karunasiri

[10]

showed

that, quite generally,

a

negative

v~ will be

generated by

renormalization.

However,

our

previous

results

[4]

for the n

= 2 and n

= 4 models and the results of the

present

work are

consistent with the

following

somewhat different

picture.

In the case of the n

=

4 model we

believe that v~ < 0 and that the

pyramid instability

can be

explained by

this fact. On the other

hand,

the n

=

2 model does not show this

instability

and, as the

exponent

z is close to

4,

we are forced to conclude that the

leading

derivative on the

right

hand side of

(3)

is the

Laplacian squared,

I-e- v~ = 0.

Finally,

our results for the n

=

I model are consistent with the choice v~ ~ 0. If v~ ~

0,

then all

higher

order terms in the

Langevin equation (3)

are irrelevant in the

renormalization group sense

(as

can be shown

by

power

counting

in the

corresponding

Martin-

Siggia-Rose [13] functional)

and we

immediately

find z

= y

=2,

consistent with our

simulations.

We note that these

exponents

are the same as those found for the Edwards-Wilkinson model

j14]

in which the

Laplacian

term with

positive

v~ is due to

gravity.

This is also the case for a

model studied

by Family [15]

in which relaxation is

explicitly

due to

gravity

rather than diffusion because

particles

move

only

downhill. In our model there is

nothing

like

gravity

and

we conclude that the

Laplacian

term with a

positive

coefficient v~ must be

produced

at

large length

scales

by

a renormalization effect.

Remarkably,

a

simple change

of the

parameter

n in

equation (I)

seems to

produce

flow to

quite

different fixed

points.

We also

point

out that in the

case of

equilibrium

fluctuations

(diffusion

but no

deposition)

this

Laplacian

term is not

generated

under renormalization and that the

dynamic

as well as static

scaling properties

of the model are

independent

of n. The existence of the

Laplacian

term can also be traced to a

slope- dependent

surface current which is caused

by

the

breaking

of detailed balance

by

the

deposition

events

[17]. However,

neither the

sign

of v~ nor its

magnitude

is

easily

obtained from the

microscopic

details of a

given

model a derivation of v~ would

require

a derivation of the

Langevin equation

from the

appropriate

Master

equation.

The result y

=

2 for the n

= I model means that the width of the surface

diverges only logarithmically

in two dimensions. This

implies

that this model is a

good starting-point

for a

description

of molecular beam

epitaxy,

a process that at low temperatures can

produce

atomically

flat films. For a 128x 128

substrate,

the width in the

steady

state at

(7)

1376 JOURNAL DE

PHYSIQUE

I N° 6

T

=

o is

only

a few

layers,

even for the

high deposition

rate used in our simulations. The

steady

state is attained after many thousands of

layers

have been

deposited

and at

early

times

(ten

to one hundred

layers)

the interface is

essentially

flat a result also obtained

by Jiang

and Ebner

j16]

who studied the n

=

I model

(with evaporation

and

smoothing by

a

locally varying

deposition

rate rather than

diffusion)

for very short times. In this sense the n

= I model is very different from

previously proposed

models

j2-6]

that result in very

rough

surfaces.

Acknowledgments.

We thank Joachim

Krug

for

stimulating

conversations. This research was

supported by

the

NSERC of Canada.

References

[ii KARDAR M., PARISI G. and ZHANG Y.-C., Phys. Rev. Lett. 56 (1986) 889.

[2] WOLF D. E. and VILLAIN J.,

Europhys.

Lett. 13 (1990) 389.

[3] DAS SARMA S. and TAMBORENEA P., Phys. Rev. Lett. 66 (1991) 325.

[4] SIEGERT M. and PLISCHKE M.,

Phys.

Rev. Lett. 68 (1992) 2035.

[5] YAN H., Phys. Rev. Lett. 68 (1992) 3048.

[6] KESSLER D. A., LEVINE H. and SANDER L. M.,

Phys.

Rev. Lett. 69 (1992) 100.

[7] SIEGERT M. and PLISCHKE M., to be

published.

[8] See, e-g-, WEEKS J. D. and GILMER G. H., Adv. Chem.

Phys.

40 (1979) 157.

[9] In (2) and

throughout

the rest of this article we neglect the

dependence

of correlation functions on the direction of k. This is

justified

in the

scaling regime.

[10] GOLUBOVIC L. and KARUNASIRI R. K. P.,

Phys.

Rev. Lett. 66 (1991) 3156 and UCLA

preprint.

[11] VILLAIN J., J.

Phys.

I France 1(1991) 19.

[12] SCHWOEBEL R. L. and SHIPSEY E. J., J. Appt.

Phys.

37 (1966) 3682 ; SCHWOEBEL R. L., J.

Appt. Phys.

40 (1969) 614.

[13] MARTIN P. C., SIGGIA E. D. and RosE H. A., Phys. Rev. AS (1973) 423.

[14] EDWARDS S. F. and WILKINSON D. R., Proc. Roy. Sac. London A 381(1982) 17.

[15] FAMILY F., J.

Phys.

A 20 (1986) L 441.

[16] JIANG Z, and EBNER C., Phys. Rev. B 45 (1992) 6163.

[17] KRUG J., PLISCHKE M. and SIEGERT M., to be

published.

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