Power MOSFET

(1)

IRF530N

HEXFET

^®

Power MOSFET

S D

G

V

_DSS

= 100V R

DS(on)

= 0.11Ω

I

D

= 17A

TO-220AB

5/13/98

Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12 A

IDM Pulsed Drain Current 60

PD @TC = 25°C Power Dissipation 79 W

Linear Derating Factor 0.53 W/°C

V_GS Gate-to-Source Voltage ± 20 V

E_AS Single Pulse Avalanche Energy 150 mJ

IAR Avalanche Current 9.0 A

EAR Repetitive Avalanche Energy 7.9 mJ

dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

T_J Operating Junction and -55 to + 175

T_STG Storage Temperature Range

Soldering Temperature, for 10 seconds 300 (1.6mm from case )

°C Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Absolute Maximum Ratings

Parameter Typ. Max. Units

R_θJC Junction-to-Case ––– 1.9

R_θCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W

R_θJA Junction-to-Ambient ––– 62

Thermal Resistance Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

l

Advanced Process Technology

l

Dynamic dv/dt Rating

l

175°C Operating Temperature

l

Fast Switching

l

Fully Avalanche Rated

(2)

IRF530N

Parameter Min. Typ. Max. Units Conditions

IS Continuous Source Current MOSFET symbol

(Body Diode) ––– –––

showing the

ISM Pulsed Source Current integral reverse

(Body Diode) ––– –––

p-n junction diode.

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 9.0A, VGS = 0V trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, IF = 9.0A

Qrr Reverse RecoveryCharge ––– 650 970 nC di/dt = 100A/µs

Source-Drain Ratings and Characteristics

S D

G

Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA

∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.11 Ω VGS = 10V, ID = 9.0A VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA gfs Forward Transconductance 6.4 ––– ––– S VDS = 50V, ID = 9.0A

––– ––– 25

µA VDS = 100V, VGS = 0V

––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V

Gate-to-Source Reverse Leakage ––– ––– -100 nA

VGS = -20V

Qg Total Gate Charge ––– ––– 44 ID = 9.0A

Qgs Gate-to-Source Charge ––– ––– 6.2 nC VDS = 80V

Qgd Gate-to-Drain ("Miller") Charge ––– ––– 21 VGS = 10V, See Fig. 6 and 13

td(on) Turn-On Delay Time ––– 6.4 ––– VDD = 50V

tr Rise Time ––– 27 ––– ID = 9.0A

td(off) Turn-Off Delay Time ––– 37 ––– RG = 12Ω

tf Fall Time ––– 25 ––– RD = 5.5Ω, See Fig. 10

Between lead,

––– –––

6mm (0.25in.) from package

and center of die contact

Ciss Input Capacitance ––– 640 ––– VGS = 0V

Coss Output Capacitance ––– 160 ––– pF VDS = 25V

Crss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5 nH

Electrical Characteristics @ T

_J

= 25°C (unless otherwise specified)

LD Internal Drain Inductance

L_S Internal Source Inductance ––– –––

S D

G

IGSS

ns

4.5 7.5 I_DSS Drain-to-Source Leakage Current

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 ) ^ISD ≤ 9.0A, di/dt ≤ 520A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

Notes:

^VDD = 25V, starting TJ = 25°C, L = 3.1mH RG = 25Ω, IAS = 9.0A. (See Figure 12)

Pulse width ≤ 300µs; duty cycle ≤ 2%.

17 60

A

(3)

Fig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature

Fig 2. Typical Output Characteristics

1 1 0 1 0 0

0.1 1 1 0 1 0 0

I , Drain-to-Source Current (A) D

V , D rain -to -S ourc e V o lta ge (V )D S

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

20 µ s P U LS E W ID TH T = 2 5°C

A 4.5 V

J 1

1 0 1 0 0

0.1 1 1 0 1 0 0

4 .5 V

I , Drain-to-Source Current (A) D

V , D rain-to-S ource V oltage (V )DS

VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V

A 2 0µ s P U L S E W ID T H T = 17 5°CJ

1 1 0 1 0 0

4 5 6 7 8 9 1 0

T = 2 5 °CJ

V , G ate-to -S o urce V oltag e (V )G S

DI , Drain-to-Source Current (A)

V = 5 0V

2 0µ s P U L S E W ID TH DS

T = 1 75 °C_J

A ^{0 . 0}

0 . 5 1 . 0 1 . 5 2 . 0 2 . 5 3 . 0

- 6 0 - 4 0 - 2 0 0 2 0 4 0 6 0 8 0 1 0 0 1 2 0 1 4 0 1 6 0 1 8 0

T , Junction T em perature (°C )J R , Drain-to-Source On ResistanceDS(on) (Normalized)

V = 10 V G S A I = 1 5AD

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IRF530N

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 8. Maximum Safe Operating Area Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

0 4 8 1 2 1 6 2 0

0 5 1 0 1 5 2 0 2 5 3 0 3 5 4 0 4 5

Q , T ota l G ate C h a rg e (n C )_G V , Gate-to-Source Voltage (V) GS

V = 80 V V = 50 V V = 20 V

A F O R TE S T C IR C U IT S E E F IG U R E 1 3 I = 9.0 A_D

D S D S D S

1 1 0 1 0 0

0 . 4 0 . 6 0 . 8 1 . 0 1 . 2 1 . 4 1 . 6

T = 25 °C_J

V = 0V G S

V , S ourc e-to -D rain V o ltage (V )

I , Reverse Drain Current (A)

S D

SD

A T = 1 75 °CJ

1 1 0 1 0 0 1 0 0 0

V , D ra in-to-S o u rce V o lta ge (V )_{D S}

I , Drain Current (A)

O P E R A T IO N IN T H IS A R E A L IM ITE D B Y R

D

D S (o n)

1 0 µ s

1 0 0 µ s

1 m s

1 0 m s

A T = 25 °C

T = 17 5°C S ing le P u ls e

C J 0

2 0 0 4 0 0 6 0 0 8 0 0 1 0 0 0 1 2 0 0

1 1 0 1 0 0

C, Capacitance (pF)

V , D rain-to -S ource V olta ge (V )D S A V = 0V , f = 1M H z

C = C + C , C S H O R T E D C = C

C = C + C G S

iss g s gd ds rs s g d

o ss ds g d

C is s

C os s

C rs s

(5)

Fig 9. Maximum Drain Current Vs.

Case Temperature

Fig 10a. Switching Time Test Circuit

V_DS 90%

10%

V_GS

t_d(on) t_r t_d(off) t_f V_DS

Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 %

Fig 10b. Switching Time Waveforms

R_D V_GS

R_G

D.U.T.

10V

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

+

-VDD

25 50 75 100 125 150 175

0 5 10 15 20

T , Case Temperature ( C)

I , Drain Current (A)

C °

D

0.01 0.1 1 10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P t

t DM

1 2

t , Rectangular Pulse Duration (sec)

Thermal Response(Z )

1

thJC

0.01 0.02 0.05 0.10 0.20 D = 0.50

SINGLE PULSE (THERMAL RESPONSE)

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IRF530N

Fig 12a. Unclamped Inductive Test Circuit

V_DS L

D.U.T.

V_DD

I_AS

t_p _0.01Ω

R_G +

-

t_p

V_DS

I_AS

V_DD V_(BR)DSS

10 V

Fig 12b. Unclamped Inductive Waveforms

D.U.T. V_DS

I_D I_G

3mA V_GS

.3µF 50KΩ 12V .2µF

Current Regulator Same Type as D.U.T.

Current Sampling Resistors

+ -

Fig 13b. Gate Charge Test Circuit

Q_G

Q_GS Q_GD

V_G

Charge

10 V

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

0 5 0 1 0 0 1 5 0 2 0 0 2 5 0 3 0 0 3 5 0

2 5 5 0 7 5 1 0 0 1 2 5 1 5 0 1 7 5

J E , Single Pulse Avalanche Energy (mJ)AS

A S ta rtin g T , J u nc tio n T em p e ra ture (°C ) V = 25 V

I T O P 3.7 A 6.4A B O TT O M 9 .0 A

D D

D

(7)

P.W. Period

di/dt Diode Recovery

dv/dt

Ripple ≤ 5%

Body Diode Forward Drop Re-Applied

Voltage Reverse Recovery Current

Body Diode Forward Current

V_GS=10V

V_DD

I_SD Driver Gate Drive

D.U.T. I_SDWaveform

D.U.T. V_DSWaveform

Inductor Curent

D = P.W.

Period

+ - +

+

- + -

-

Fig 14. For N-Channel HEXFETS

*

VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

V_DD

• dv/dt controlled by R_G

• Driver same type as D.U.T.

• I_SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test D.U.T Circuit Layout Considerations

• Low Stray Inductance • Ground Plane

• Low Leakage Inductance Current Transformer

*

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IRF530N

P A R T N U M B E R IN T E R N A T IO N A L

R E C T IF IE R L O G O E X A M P L E : T H IS IS A N IR F 1 0 1 0

W IT H A S S E M B L Y L O T C O D E 9 B 1 M

A S S E M B L Y L O T C O D E

D A T E C O D E (Y Y W W ) Y Y = Y E A R W W = W E E K 9 2 4 6

IR F 10 1 0 9B 1 M

A

Part Marking Information

TO-220AB

Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

P A R T N U M B E R IN T E R N A T IO N A L

R E C T IF IE R L O G O E X A M P L E : T H IS IS A N IR F 1 0 1 0

W IT H A S S E M B L Y L O T C O D E 9 B 1 M

A S S E M B L Y L O T C O D E

D A T E C O D E (Y Y W W ) Y Y = Y E A R W W = W E E K 9 2 4 6

IR F 10 1 0 9B 1 M

A

L E A D A S S IG NM E NT S 1 - G A T E 2 - D R A IN 3 - S O U RC E 4 - D R A IN - B -

1 .32 (.05 2) 1 .22 (.04 8)

3 X0.55 (.02 2) 0.46 (.01 8) 2 .92 (.11 5) 2 .64 (.10 4) 4.69 ( .18 5 )

4.20 ( .16 5 )

3X 0.93 (.03 7) 0.69 (.02 7) 4.06 (.16 0) 3.55 (.14 0) 1.15 (.04 5) M IN 6.47 (.25 5) 6.10 (.24 0)

3 .7 8 (.149 ) 3 .5 4 (.139 ) - A - 10 .54 (.4 15)

10 .29 (.4 05) 2.87 (.11 3)

2.62 (.10 3)

1 5.24 (.60 0) 1 4.84 (.58 4)

1 4.09 (.55 5) 1 3.47 (.53 0)

3 X 1 .4 0 (.0 55 ) 1 .1 5 (.0 45 ) 2.54 (.10 0)

2 X

0 .3 6 (.01 4) M B A M 4

1 2 3

N O TE S :

1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B . 2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 5/98

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Package Outline

TO-220AB Outline

Dimensions are shown in millimeters (inches)

Part Marking Information

LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 4 - DRAIN - B -

1.32 (.052) 1.22 (.048)

3X0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185)

4.20 (.165)

3X0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) MIN 6.47 (.255) 6.10 (.240)

3.78 (.149) 3.54 (.139) - A - 10.54 (.415)

10.29 (.405) 2.87 (.113)

2.62 (.103)

15.24 (.600) 14.84 (.584)

14.09 (.555) 13.47 (.530)

3X1.40 (.055) 1.15 (.045) 2.54 (.100)

2X

0.36 (.014) M B A M 4

1 2 3

NOTES:

1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220-AB.

2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.

TO-220AB

PART NUMBER INTERNATIONAL

RECTIFIER LOGO EXAMPLE : THIS IS AN IRF1010

WITH ASSEMBLY LOT CODE 9B1M

ASSEMBLY LOT CODE

DATE CODE (YYWW) YY = YEAR WW = WEEK 9246

IRF1010 9B 1M

A

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications subject to change without notice. 8/95