MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC-SEM

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Submitted on 1 Jan 1989

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MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND

ANNEALED SILICON BY MEANS OF EBIC-SEM

L. Snyman

To cite this version:

L. Snyman. MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC- SEM. Journal de Physique Colloques, 1989, 50 (C6), pp.C6-186-C6-186. �10.1051/jphyscol:1989640�.

�jpa-00229672�

R E W E DE PHYSIQUE

APPLIQUBE

Colloque C6, supplBment au n06, Tome 24, Juin 1989

MICROSCOPIC AND MACROSCOPIC EVALUATION OF THE RECOMBINATION CONTRAST IN PLASTICALLY DEFORMED AND ANNEALED SILICON BY MEANS OF EBIC-SEM

L.W. SNYMAN

P h y s i c s D e p a r t m e n t , U n i v e r s i t y of P o r t E l i z a b e t h , P o r t E l i z a b e t h , 6000 South A f r i c a

Single crystalline silicon bars were plastically deformed in the temperature range 850°C

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The recombination contrast in the crystals was assessed on both a microscopic and on a macroscopic level by using different Schottky contact and electron beam scanning geometries.

In particular, a special through-Schottky contact imaging technique was developed that enabled evaluation of the minority carrier diffusion length over large crystal areas (200vm x 200pm) while still resolving recombination contrast from individual defects in the crystal. This technique was facilitated by using a special beam current measuring mechanism in the collection circuitry and, with the aid of some theoretical manipulations, enabled the accurate experimental determination of the collection efficiency of the Schottky contact for minority carriers as a function of beam position and also as a function of the EBIC signal level. By employing the collection efficiency dependency as a function of the minority carrier diffusion length at high kV the grey levels in the final EBIC image could be accurately calibrated in terms of the the minority carrier diffusion length. Thus contrast due to recombination at individual defects is preserved while the background EBIC grey level between the defect contrast depicts the value of the minority carrier diffusion length in the vicinity of the defect.

This technique therefore has great potential for application in defect gettering studies.

The main results of the study and the detail of the imaging techniques will be presented.

References :

1. C J Wu and D B Wittry, J Appl Physics

49,

2. R D Bell and J T. Hanoka, J Appl Physics

53,

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1989640