On the temperature dependence of the EBIC contrast of dislocations in silicon
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- This paper discusses the quantitative evaluation of the images of dislocations in semiconductors, as obtained by charge collection (or EBIC) scanning electron microscopy, and
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may be achieved. This high spatial resolution enables individual, well character- ised dislocation segments to be studied on a sub-micron scale, thus making the EBIC mode of an SEM
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