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Oi and Cs Impurities Study on the Edge of Si-mcIngot for Photovoltaic Applications

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Universal Journal of Physics and Application

Volume 10, Issue 2, 2016, Pages 40-42

Oi and Cs Impurities Study on the Edge of Si-mc Ingot for Photovoltaic Applications

Fayssal Boufelghab, Y. CHETTATE, S. BELHOUSSE

Abstract: The objective of this work is determining the substitutional carbon ([Cs]) and interstitial oxygen ([Oi]) concentrations in the edge of the multicrystalline silicon ingot (mc-Si) for photovoltaic applications obtained by the heat exchanger method (HEM).

Some calculations of [Cs] and [Oi] was obtain by the Fourier Transform InfraRed spectroscopy (FTIR). The results obtained for [Cs] give an increase of bottom-up of the ingot: 130 ppm to 150 ppm. The results obtained for the [Oi] give constant concentrations throughout the edge of the ingot with an author of concentration 325 ppm.

Keywords : Crystallization, mc-Si, HEM, FTIR, [Cs], [Oi]

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