Critical dislocation speed in helium-4 crystals

We obtained this result by studying the dissipation of dislocation motion as a function of the frequency and amplitude of a driving strain applied to a crystal at low temperature..

was determined from the frequency dependence of the peak dissipation temperature under the assumption that the damping due to 3 He is proportional to the concentration of 3 He

-> no bulk resistance to the growth, the growth velocity is limited by surface effects -> no bulk resistance to the growth, the growth velocity is limited by surface

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In a system where the host ion has a smaller size than the aliovalent impurity ion the ccv according to Dreyfus [2] will be predominantly in the near neighbour (nn)

With the increase of milling time all Co atoms became dissolved in the bcc Fe and the final product of the MA process was the nanocrystalline Fe (Co) solid solution with a mean

Temperature and strain-rate dependence of the flow stress of tantalum single crystals in cyclic

It is shown that a temperature dependent modulus defect in reasonable agreement with experiment can be obtained by calculating the thermal ly averaged displacement 5 for