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Synaptic Weight Modulation and Logic Function Learning with Electro-grafted Nano Organic Memristors

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HAL Id: cea-02346364

https://hal-cea.archives-ouvertes.fr/cea-02346364

Submitted on 5 Nov 2019

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Synaptic Weight Modulation and Logic Function

Learning with Electro-grafted Nano Organic Memristors

Y-P Lin, C Bennett, D Chabi, D Vodenicarevic, D Querlioz, T Cabaret, A

Balan, B Jousselme, C Gamrat, J-O Klein, et al.

To cite this version:

Y-P Lin, C Bennett, D Chabi, D Vodenicarevic, D Querlioz, et al.. Synaptic Weight Modulation and Logic Function Learning with Electro-grafted Nano Organic Memristors. Nanotech France 2016, Jun 2016, Paris, France. �cea-02346364�

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Conference topic: Nanoscale Electronics (Neuromorphic architectures)

Synaptic Weight Modulation and Logic Function Learning

with Electro-grafted Nano Organic Memristors

Y-P. Lin,1 C.H. Bennett,2 D. Chabi,2 D. Vodenicarevic,2 D. Querlioz,2 T. Cabaret,1 A. Balan,1 B. Jousselme1, C. Gamrat,3 J-O. Klein,2 V. Derycke1

1 LICSEN, NIMBE, CEA, CNRS, Université Paris-Saclay, CEA Saclay 91191 Gif-sur-Yvette Cedex, France 2 Université Paris-Sud, IEF (UMR CNRS 8622), F-91405 Orsay, France

3 Laboratoire d’intégration de systèmes et de technologies, CEA Saclay, Gif-sur-Yvette F-91191, France

Contact: [email protected]

Abstract:

Neuromorphic computing has gained important attention since it is an efficient way to handle advanced cognitive tasks such as image recogni-tion and classificarecogni-tion. Hardware implementa-tion of an artificial neural network (ANN) re-quires arrays of scalable memory elements to act as artificial synapses. Memristors, which are two-terminal analog memory devices, are excel-lent candidates for this application as their tuna-ble resistance could be used to code and store synaptic weights with, in principle, low power consumption. In this work, we studied metal-organic-metal memristors in which the organic layer is a dense and robust electro-grafted thin film of redox complexes. The process allows fabricating planar and vertical junctions, as well as small crossbar arrays. The unipolar devices display non-volatile multi-level conductivity states with high RMAX/RMIN ratio and two dis-tinct thresholds. The characteristics of individu-al memristors were characterized in depth with respect to the targeted synaptic function. We notably showed that they possess the Spike Timing-Dependent Plasticity (STDP) property (their conductivity evolves as a function of the time-delay between incoming pulses at both terminals), which is critical for future applica-tions in neuromorphic circuits based on unsu-pervised learning. In parallel, we implemented a series of memristors as synapses in a simple prototype: a mixed circuit with the neuron im-plemented with conventional electronics. This ANN is able to learn linearly separable 3-input logic functions through an iterative supervised learning algorithm inspired by the Widrow-Hoff rule.

Keywords: spike timing-dependent plasticity,

electro-grafting, organic memristors, supervised learning, neuromorphic circuit.

Figure 1: A) Planar structure of the organic

memristor and schematic of the electro-grafted thin film of redox complexes. B) Unipolar switching behavior of single memristor. C) Cumulative STDP property of single organic memristor during ~4300 sequentially-applied voltage pulses with random time-delay of pre-/post-synaptic input.

References:

Bennett C.H., Chabi D., Cabaret T., Jousselme B., Derycke V., Querlioz D., Klein J.-O., (2015) Super-vised Learning with Organic Memristor Devices and Prospects for Neural Crossbar Arrays, NanoArch 2015 IEEE/ACM International Symposium, 181. Cabaret T., (2014) Etude, réalisation et caractérisa-tion de memristors organiques électro-greffés en tant que nanosynapses de circuits neuro-inspirés, Thesis.

Oral, Nanotech France 2016, 1er-3 Juin 2016, Paris, France

Figure

Figure  1:  A)  Planar  structure  of  the  organic  memristor and schematic of the electro-grafted thin  film  of  redox  complexes

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