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Design and Optimisation of Circular and Inductors for Silicon-based RFIC Application

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African Physical Review

Volume 2, Issue Special Issue (Microelectronics): 0048, 2008, Pages 98-99

Design and Optimisation of Circular and Inductors for Silicon-based RFIC Application

ZIOUCHE Aicha, M. T. Belaroussi

Abstract: In this paper, spiral inductors for RF application, which are designed on a silicon substrate by using standards 0.35 µ m CMOS technology, are described. Analyzed and designed with ASITIC (a tool from the University of Berkeley), which accurately takes into account the parasitic effects. This study shows the possibility of obtaining an optimal inductance having a high quality factor of 15. This result is carried out without resorting to the specific processes such as the digging of the substrate under the inductors or the use of a thick layer in gold. The use of circular form, with optimization of geometrical parameters like spacing between two adjacent turn, the track width and the number of turns, can ensure high quality factors.

Keywords : circular inductor, high quality factors., RF application

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