Ion Beam Applications in Surface and Bulk Modification of Insulators | IAEA
Texte intégral
Documents relatifs
several important advantages: i) The multi-charge IS is out of the “hot zone”; ii) the 1+ beam is purified before being introduced into the N+ source, which limits the pollution
Figure 5 - Liquid phase duration and melt-front velocity versus fluence.. The starting silicon temperature was 20°C except f o r one case for which we have simulated the effect
MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON BEAM ANNEALING IN ION-IMPLANTED SILICON.. La vitesse d e recristallisation depend principalement du gradient
L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des
2 we consider the ith beam of an array of beams traversing the target, and evaluate the total energy deposition rate per unit volume at a point L. The component of the ith beam
tail and doubly charged B" ions were hardly observed because of their large evaporation field. Lower energy ion tails are likely explained by charge transfer collision
L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des
The electron beam annealing has been performed operating in an isothermal regime with a new electron gun, developed iy our laboratory, which is able to provide irraqation of a
