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Chemisorption on a model transition metal : ordered overlayers with C(2 x 2) and (2 x 1) structures

K. Masuda

To cite this version:

K. Masuda. Chemisorption on a model transition metal : ordered overlayers with C(2 x 2) and (2 x 1) structures. Journal de Physique, 1979, 40 (3), pp.299-308. �10.1051/jphys:01979004003029900�.

�jpa-00209109�

(2)

299

Chemisorption on a model transition metal : ordered overlayers

with C(2 x 2) and (2 1) structures

K. Masuda

Department of Materials Science and Engineering, Tokyo Institute of Technology, Ookayama, Meguro, Tokyo 152, Japan (Reçu le 9 octobre 1978, accepté le 20 novembre 1978)

Résumé.

-

On étudie l’effet de la chimisorption de couches atomiques ordonnées, C(2

x

2) et (2 1)

sur

la

surface (001) de métaux de transition

en

utilisant le formalisme des fonctions de Green et la technique du déphasage.

La structure du substrat métallique est décrite

en

combinaison linéaire d’orbitales atomiques (LCAO) suivant

la méthode de Allan, Kalkstein et Soven. Les substrats sont soit cubique simple, soit cubique à corps centré.

Chaque adatome est représenté par

un

seul niveau d’énergie

non

dégénéré. Les adatomes sont placés

sur

la surface,

à la fois

sur

le site et

au

centre de la configuration à quatre sites. Le changement de la densité d’états à la chimisorp-

tion est calculé suivant le modèle de Newns-Anderson. On montre que les effets d’ordre à longue distance dans la couche adsorbée, de géométrie d’adsorption et de structure de bandes du substrat

sur

la structure électronique

des couches ordonnées sont importants. On montre aussi qu’il y

a

deux types d’états

non

liants pour les couches ordonnées.

Abstract.

2014

The effect of chemisorption of ordered atomic layers with C(2

x

2) and (2 1) structures

on

the

(001) surface of model transition metals is investigated using the Green’s function formalism and the phase shift technique. The electronic structure of the metallic substrate is described by the Linear Combination of Atomic Orbital (LCAO) scheme and is obtained by the method developed by Allan and Kalkstein and Soven. For compa- rison, both the simple cubic and body centred cubic substrate models

are

used. Each adatom is represented by

a

single non-degenerate energy level. The adatoms

are

placed

on

the surface in both the on-site and centred fourfold- site configurations. The change in the electronic density of states upon chemisorption is calculated within the Newns-Anderson model. It is shown that the effects of the long-range order of the adsorbate layer, adsorption geometries and the band structure of the substrate

are

of great importance for the electronic structure of the ordered overlayers. In addition, it is shown that there

are

two kinds of non-bonding states characteristic of the ordered overlayers.

LE JOURNAL DE

PHYSIQUE

TOME

40,

MARS

1979,

Classification

Physics Abstracts

73.20

1. Introduction.

-

There has been a great deal of theoretical and experimental work concerning the

electronic properties of chemisorbed systems Il, 2]. In

order to develop a qualitative picture of the complex chemisorption process, simple model calculations have been very useful [3]. Using Green’s functions

coupled with the phase shift technique, several authors have investigated the electronic structure of chemi-

sorption systems. Allan, using this technique, has

obtained the binding energy of single transition metal atoms adsorbed on the (001) surface of tungsten, simulated by a fivefold degenerate s-band simple

cubic (sc) crystal [4]. Einstein [5] has calculated the

change in the electronic density of states (DOS) due

to single atom chemisorption on the (001) s-band sc crystal. Furthermore, Ho, Cunningham and Wein- berg [6] have studied the chemisorption behaviour

on the (001) surface of the s-band body centred cubic

(bcc) crystal.

Other simple methods have also been used to study

the chemisorption behaviour. Cyrot-Lackmann et

al. [7] have used the moment method to calculate the

local DOS for the adatom on the (001) surface of the sc crystal in three different adsorption geometries.

Haydock and Kelly [8], using a similar method, have

studied the adatom DOS for (001) surface of a bcc metal. More recently, Moràn-Lôpez, Kerker and Bennemann [9] have calculated the local DOS for the adatom on a disordered alloy surface, using the

continued fraction method.

In addition to the studies for the single atom adsorption, these approaches have further been

applied to the various chemisorption systems. Einstein and Schrieffer [10] and Burke [11] have studied the pair

interaction energies between the adsorbate atoms. Ho, Cunningham and Weinberg have investigated the change in the electronic DOS due to the adsorption of

a monolayer of atoms (0

=

1) on the (001) surface

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:01979004003029900

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both of a model bcc metal (one-band) and of a model

two-band crystal with the CsCI structure [12, 13].

The present author [14] has studied the effect of having

the monolayer of atoms on the tight-binding metal surface, using the two-peaked DOS model for the substrate.

So far, however, no theoretical calculations have been performed for the change in the electronic DOS due to the adsorption of ordered atomic layers with general coverage 0. Furthermore, in view of the fact that surface superstructures are found in many

chemisorption systems by low energy electron diffrac- tion (LEED) [15], e.g., C(2 x 2)-H structure on W(100) and Mo(100), C(2 x 2)-0 structure on Mo(100), (2 x 1)-0 structure on Mo(100), Mo(110)

and W(110) and (2 x 2)-0 and (4 x 1 )-0 structures

on W(100) surface (see also table I), it is desirable to

perform the chemisorption calculation for the ordered

overlayers with general coverage. It is the purpose of the present paper to investigate the changes in the

electronic DOS due to the adsorption of the ordered

atomic layers with 0

=

1/2, i.e., C(2 x 2) and (2 x 1) overlayers. However, the method presented in this

paper is quite general and the ordered overlayers

with 0=1/4, (2 x 2) and (4 x 1) structures, are treated in the Appendix.

Table I.

-

Ordered overlayers with 0

=

1 j2 and 1/4

on the transition metal surfaces. (From Somorjai, ref. [15].)

The present method uses the LCAO scheme and the tight-binding approximation to describe the semi- infinite crystal (1). For comparison, both the sc and

the bcc substrate models are used. Each adatom is

represented by a single nondegenerate energy level.

Two binding sites, the on-site and the centred fourfold- site, are considered. The Green’s function formalism and the phase-shift function approach are used to

calculate the change in the electronic DOS due to

(1) The d-bands of transition metals

are

well described by the tight-binding model and

a

good description of the properties (such

as

the chemisorption behaviour) of transition metals

can

be obtained from this model [Friedel J., The Physics of Metals (Cambridge University Press) 1969, p. 340].

chemisorption. These particular system and method have been chosen so that a direct comparison can

be made with the results of references [5, 6, 12]

and [14], where the single atom chemisorption and

the monolayer chemisorption are discussed under

same assumptions. The main advantage of the phase-

shift technique is that it gives directly the change in

the electronic DOS due to chemisorption. This

information is quite important since it is directly applicable to photoemission. No other method gives

this same information in such a straightforward

manner.

The format of the present paper is as follows : In section 2, we present the formulation for obtaining

the phase-shift functions for the ordered overlayers.

It is also shown that the change in the electronic DOS due to chemisorption is easily calculated from the

phase-shift function. Results of the numerical calcula- tions and the related discussions are given in section 3.

The final section (section 4) is devoted to conclusions.

The extension of the theory to the chemisorbed systems with 0

=

1/4, (2 x 2) and (4x1) overlayers,

is given in the Appendix.

2. Phase-shift functions for the ordered overlayers

with 0

=

1/2.

-

The most straightforward derivation

of the phase-shift functions for the ordered overlayers

with general coverage is first to obtain the phase-

shift function for a complete (1 x 1) ordered over- layer (0 = 1) and then to modify it taking account of

the structure of the ordered overlayers. Therefore, we first derive the phase-shift function for the (1 x 1)

ordered overlayer, commensurate monolayer. In the

case of the monolayer chemisorption, one can use the fact that the whole system has translational symmetry

parallel to the surface.

In order to derive the phase-shift function appro-

priate for the (1 x 1) ordered overlayer, we need to

know the Green’s functions for both the adatom in its free state and the clean substrate. When the direct interaction between the adatoms can be neglected,

the Green’s function for each adatom is given by

where E is the energy and Ea is the orbital energy of the adatom. The Green’s function for the semi-infinite clean substrate crystal can be obtained, in a mixed

Bloch-Wannier representation, from the previous

work of Kalkstein and Soven [16]. For the (001) sur-

face of the sc tight-binding metal,

where

(4)

301

and

Here, t is the transfer integral between the nearest-

neighbour substrate atoms and k Il (k,,, ky) is the unitless

two-dimensional wave vector (a

=

1 ; a is the lattice constant of the sc crystal) within the surface Brillouin

zone (SBZ). Furthermore, Eo is the energy of the middle of the band and the total bandwidth is 12 1 t f.

For the (001) surface of the bcc metal [17]

where

Here, T is the transfer integral between the nearest- neighbour substrate (bcc structure) atoms and the

bandwidth is 16 ! 1 T 1.

Following the phase-shift technique [4, 18-20], we

define the partial (kil dépendent) phase-shift function

for the chemisorption system as

where lis the identity matrix, V and G are the pertur- bation and the unperturbed Green’s function matrices, respectively, and x represents the adsorption geo- metry. In the following, we consider the two binding sites, the on-site and centred fourfold-site configura-

tions. For both binding sites, the unperturbed Green’s

function matrix is diagonal and is given by

The perturbation matrix V describes the hopping

interaction between the adatom and the substrate atoms and also describes the shifts of the orbital

energies of both the adsorbate and substrate atoms due to the formation of the chemisorption bonds [12, 18].

For the on-site adsorption where the adatom sits

directly over the substrate atom and is bonded only

to it, Vis expressed as

where Yt is the on-site binding strength, and bEa and bEe (2) are the changes in the orbital energies of the

e) Here, it is assumed that the perturbation is localized comple- tely in the monolayer of adatoms and the surface plane of substrate atoms.

adatom and the substrate atom directly beneath it, respectively. Both terms, âE. and BES, result from the redistribution of electrons upon chemisorption and

their magnitudes can be determined to satisfy the

Friedel sum rule. The corresponding perturbation

matrix for the centred fourfold-site adsorption, where

the adatom is situated above the centre of four sub- strate atoms and is bonded to all four of them, is given by

where

and bEs and ôEf correspond to ôE., and bEa for the

on-site adsorption, respectively. Here, V,, is the binding strength of the adatom in the centred fourfold-site to each of the substrate atoms.

Using eqs. (9), (10), and (11), we obtain the partial phase-shift function per unit cell for the on-site

adsorption

For the centred fourfold-site adsorption, we obtain a

similar expression

Once the partial phase-shift function is known, the change in the electronic DOS, àp(E), can be given by [19, 20]

where the total phase-shift function 1Jx(E) is defined by

Here, Na is the number of adatoms and the Heaviside theta function is added so that Ap(E) directly gives the

difference in the DOS between the chemisorbed system and the clean substrate. In eq. (16), we find

the sum rule

(5)

since we are adding an electron state to the system.

In addition, it is important to realize that àp(E) in

eq. (16) is the quantity of experimental interest since photoemission difference spectra are obtained by

subtraction of the clean substrate spectrum from the chemisorbed system spectrum. The magnitudes of the diagonal matrix elements, bE., and bEa (ôEf and bE.’), are in principle obtained from the Friedel sum

rule under appropriate assumptions such as

For the adsorbate atoms with one valency, the Friedel

sum rule is expressed in terms of the total phase-shift

function as

where Ef is the Fermi energy of the substrate metal.

We now derive the phase-shift functions for the ordered overlayers with 0

=

1/2, C(2 x 2) and (2 x 1 ) overlayers, starting from the expressions of the partial phase-shift functions ?1,(k,,, ky ; E) for the

monolayer chemisorption. The modifications of eqs. (14), (15) and (17) are summarized as follows.

(1) For the on-site adsorption (eq. (14)), the sub-

strate Green’s function Gs(kl, ; E) is replaced by

where Kh("# (0, 0)) is a reciprocal lattice vector for the

ordered adsorbate lattice. This modification results from the physical considerations that an electron in the overlayer orbital ! 0, k Il > can hop into the first layer orbitals 11, kl, > and Il, kll ~ + Kh > by the hopping interaction (off-diagonal matrix elements of P), where 0 and 1 denote the adsorbate layer and the

first substrate layer, respectively [22, 23].

(2) For the centred fourfold-site adsorption (eq. ( 15)), a2(k ii ) Gr ,(k E) is replaced by

(3) The diagonal matrix element bE. is expected

to take the different values depending on whether the adatom is bonded directly to the substrate atom.

Note that in the first substrate layer, there are atoms directly coupled to the adatom and substrate atoms

coupled to a vacancy (vacant site). Therefore, it is

inadequate to assume the uniform values for bEs.

Since the rigorous treatment of ÔE, for the ordered

overlayers with the general coverage is complicated,

.we perform here the usual chemisorption calculation with the assumption bES

=

bEa

=

0.

(4) The summation over kx and ky (eq. (17)) extends

over only a reduced SBZ with half the size (hereafter

referred to as the adsorbate Brillouin zone (ABZ)),

since the real space unit cell area is doubled (see Fig. 1).

By the modifications (1) ’" (4), one can obtain the partial phase-shift functions for the ordered over-

layers with 0

=

1/2. For the C(2 x 2) structure,

Fig. 1.

-

Two-dimensional Brillouin

zone

appropriate for the

(001) surface (SBZ) of the

sc

and bcc lattice and those for the adsor- bate lattice (ABZ) with 0

=

1/2 ; (2

x

1) and C(2

x

2) overlayers.

The lattice constant (a) is set equal to unity.

and

where t(c) denotes the on-site (centred fourfold-site) adsorption.

In addition, for the (2 x 1) type overlayers,

and

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303

The method for obtaining the change in the DOS, àp(E), due to chemisorption is similar to the case of

the monolayer chemisorption except that the summa- tion over kll extends over the ABZ rather than the SBZ.

3. Results and discussi8lr.

-

In this section, we present the numerical results of the change in the

electronic DOS due to the adsorption of the ordered atomic layers with 0=1/2 (C(2

x

2) and (2 x 1) overlayers) on the (001) surface of the sc and bcc tight-binding metals (s-band approximation for the

d-band of the transition metals).

3.1 (001) SURFACE OF THE bcc METAL.

-

The elec- tronic structure of the clean surface of the bcc metal

are now well known [b,12]. In figure 2a we present the

imaginary parts of the surface Green’s functions

appropriate for the on-site single atom adsorption (solid curve) and for the centred fourfold-site adsorp-

tion (dot-dashed) on the (001) surface of the bcc metal. The latter surface Green’s function is calcu- lated from

where Gs(kx, ky ; E) is defined by eq. (5). These Green’s function curves are helpful when discussing the chemisorption behaviours, Ap(F), for the ordered overlayers with 0=1/2.

Fig. 2.

-

Imaginary part of the Green’s function for the single

atom adsorption

on

the (001) surface of the bcc(a) and the sc(b) lattice ; on-site (solid curves) and centred fourfold-site (dot-dashed) adsorptions. The energies

are

in units of the half-bandwidth of the substrate band.

In figure 3, we present the changes in the electronic DOS, àp(E), due to the on-site adsorption of the C(2 x 2) and (2 x 1) overlayers ; all energies are expressed in units of 2 1 Tl. The corresponding

results (3) for the centred fourfold-site adsorption

are shown in figure 4. For comparison, we have also presented the àp(E) curves for the single atom chemisorption in figure 5. To relate our model (s-band

(3) For comparison,

we

have chosen

as

Vc

=

Vt/2 [6, 12 and 13].

Fig. 3.

-

The change in the electronic DOS, àp(E), per adatom for the (2 x 1) and C(2

x

2) overlayers

on

the bcc(001) surface.

The adatoms (Ea

= -

0.5)

are

situated in the on-site positions.

V,

=

1.0 (dashed curves), 2.0 (solid) and 3.0 (dot-dashed).

1

Fig. 4.

-

The change in the electronic DOS, Ap(E), per adatom for the (2 x 1) and C(2

x

2) overlayers

on

the bcc(001) surface.

The adatoms (E.

= -

0.5)

are

situated in the centred fourfold-site

positions. Vc

=

0.5 (dashed curves), 1.0 (solid), and 1.5 (dot- dashed).

tight-binding bcc metal) to actual crystals, we assume

2 1 T 1 1.2 eV. This gives a substrate bandwidth

of 10 eV, simulating the tungsten d-band. We have

(7)

chosen the adatom energy level Ea to be - 0.5 (in

units of 2 T 1) as shown by the arrows in the figures ;

this choice of Ea is useful when comparing our results

with those of reference [12], where the monolayer chemisorption is discussed using the same substrate

model.

Fig. 5.

-

The change in the electronic DOS, Ap(E), due to the single atom (Ea

= -

0.5) adsorption

on

the bcc(001) surface :

On-site and centred fourfold-site adsorptions. V,

=

1.0, 2.0 and 3.0

and V,,

=

0.5, 1.0 and 1.5.

The best rough estimate of Ea is the average of the ionization (I) and the affinity (A ) levels, which usually

sits around the centre of the d-band rather than near

the bottom (simple gas atoms on the transition metal

surface). Furthermore, for the on-site adsorption,

electron-hole symmetry gives self-consistency condi-

tion automatically for a half-filled band and Ea

=

0.

Therefore, the position of Ea near the band centre is

reasonable. The magnitude of the binding strength

of the adatom Vt is chosen from the following conside-

rations. The value of Vt is often estimated from the

experimental binding energy. However, as the binding

energy is not a purely electronic property, it is difficult to obtain the magnitude of the binding strength accurately for specific chemisorption systems. There- fore, it is desirable to perform the numerical calcula- tions of àp(E) for a wide variety of Vt. In the present

investigation V, is taken as V, = 1 - 3. lThis para- meter range of Vt is similar to that used by Einstein

and Schrieffer [10] and Einstein [5] for the sc crystal.

The results presented in figures 3-5 have the follow-

ing appealing features.

(a) For the coupling strength Vt

=

1 (weak coupl- ing), the on-site Ap(E) curves (Fig. 3) for C(2 x 2) and (2 x 1) structures resemble the corresponding Ap(E)

curves for the single atom chemisorption (Fig. 5).

This indicates that the indirect interactions between the adatoms are not so important.

(b) However, as the coupling strength V, increases (Vt

=

2 - 3), the on-site Ap(E) curves for the C(2 x 2)

and (2 x 1) overlayers differ more significantly from

the corresponding curves for the single atom adsorp-

tion : Note that the resonance peaks (both bonding

and anti-bonding) for the ordered overlayers are strongly skewed. This results from the fact that the localized electronic states (mentioned below) for the adsorption of the ordered overlayers are wave vector

kil dependent. Thus, for the stronger coupling the

indirect interactions between the adatoms become much more important.

(c) In contrast to the on-site adsorption, the centred

fourfold-site Ap(E) curves (Fig. 4) for the ordered overlayers differ dramatically from the corresponding

curves for the single atom adsorption even in the weak

coupling case (Vc

=

0. 5) . In particular, for the (2 x 1) overlayer one can observe the prominent peak at Ea (hereafter referred to as type 1 non-bonding peak), irrespective of the strength of Vc. The appearance of this non-bonding peak is explained as follows : For

the (2 x 1) overlayer (centred fourfold-site adsorp- tion), the values both of a(k,l) and ex(k ~ + Kh) vanish

at the zone boundary of the ABZ, - n/2 kx n/2

and ky

=

± n. Therefore, the electronic state with this

kll(kx’ ky) has no interaction between the adlayer and

the substrate layer and thus has the degenerate energy E

=

Ea. From this, we see that the type 1 non-bonding

states do not occur for the on-site adsorption.

(d) Furthermore, in the centred fourfold-site ad-

sorption, the Ap(E) curves for the C(2 x 2) overlayer

differ greatly from those for the (2 x 1) overlayer.

This indicates that the long range order of the over-

layers strongly affects the electronic structure of the

overlayers. In this respect, there is the risk with the usual cluster model of loosing some of the important

features in the Ap(E) curves.

Finally, we discuss the behaviours of the localized electronic states for the ordered overlayers. It is

well known that the adsorption of atoms to a surface

can introduce electronic states which are localized outside the energy band. The localized states exist if there are solutions of the following equation

for values of E which lie outside the energy bands

when plotted in k ~ space. Here, it is important to

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305

realize that for the ordered overlayers, the indirect

interaction between the adatoms gives rise to wave

vector (k,l) dependent localized states which are

outside the bands when plotted in kll space, but which

can overlap the bands in energy. In contrast, in the

case of the single atom adsorption, the localized

states exist as a delta function outside the extrema of the band, i.e., the split-off states from the band

edges.

In figure 6, we show the positions of the localized electronic states with respect to the energy band along

the particular segments in the SBZ, ky

=

0, 0.3 n,

0.5 n, and 0.8 n. The upper curves, a, b, c, and d,

Fig. 6.

-

The positions of the localized electronic states for the ordered overlayers

on

the bcc(001) surface along the segments;

(a) and (e) ky

=

0, (b) and ( f ) ky

=

0.3 n, (c) and (g) ky

=

0.5 n,

and (d) and (h) ky

=

0.8

n.

The

arrows

below figures (a, e), (b, f), (c, g) and (d, h) indicate the boundary of the ABZ.

represent the on-site results with Ea

= -

0.5 and V,

=

3.0 and the lower curves, e, f, g, and h, do the centred fourfold-site results with Ea

= -

0.5 and V,,

=

1.5 (this gives the same total binding strength

for the two adsorption sites). The solid curves and

the dashed curves represent the results for the (2 x 1)

and C(2 x 2) overlayers, respectively. For both adsorption sites, the localized states exist both above and below the band. These states are derived from the

anti-bonding split-off-states and bonding split-off

states, respectively. One can see that the localized

states for the (2 x 1) overlayer are symmetric with

respect to kx

=

n/2 (ABZ boundary). This is in agree-

ment with the view that the energy band associated with the adsorbate layer is periodic in the kll space.

In the segment of ky

=

7r/2, the localized states for the

(2 x 1) overlayer and those for the C(2 x 2) overlayer overlap completely since sin (ky/2)

=

cos (ky/2) for

this ky value. As the total binding strength decreases,

these localized states come closer to the energy band of the substrate.

3.2 (001) SURFACE OF THE SC LATTICE. - In order to investigate the effects of the crystal structure and the band structure on the chemisorption behaviour,

we have also performed the numerical calculations of Ap(E) for the C(2 x 2) and (2 x 1) overlayers using the sc one-band tight-binding model for the substrate. In view of the fact that the Green’s function

appropriate for the on-site single atom adsorption

on the sc(001) substrate quite resembles that for the centred fourfold-site adsorption on the bcc(OOl)

substrate (see Fig. 2), it is convenient and interesting

to consider the on-site adsorption of the ordered

atomic layers on the sc(001 ) surface.

In figure 7, we present the on-site Ap(E) curves for

the C(2 x 2) and (2 x 1) overlayers on the sc(001)

surface. For comparison, we have also presented the corresponding Ap(E) curves for the single atom adsorption in figure 8. All energies are expressed in

units of 2 1 t 1. We have chosen the adatom energy E.

to be - 0.375 (- 1/8 in units of the half-bandwidth, Wb/2) and the binding strength Vt to be 0.75, 1.5, and 2.25 (1/4,1/2, and 3/4 in units of Wb/2) in order to

facilitate the comparison of the results for the sc(001 )

Fig. 7.

-

The change in the electronic DOS, Ap(E), per adatom for the (2 x 1 ) and C(2

x

2) overlayers

on

the sc(001 ) surface. The adatoms (E.

= -

0.375)

are

situated in the on-site positions.

Vt

=

0.75 (dashed curves), 1.5 (solid) and 2.25 (dot-dashed).

Fig. 8.

-

The change in the electronic DOS, Ap(E) due to the

on-

site single atom (E.

= -

0.375) adsorption

on

the sc(OOl) surface.

V,

=

0.75, 1.5 and 2.25.

(9)

surface with those for the bcc(001 ) surface. One notices in figure 8 that the on-site àp(E) curves quite resemble

the centred fourfold-site Sp(E) curves for the single

atom adsorption on the bcc(001) surface (Fig. 5).

This is due to the similarity of the Green’s functions for the two adsorption sites (Fig. 2). In this respect, it has been believed that the most important feature in determining the àp(E) is not the geometrical structure

and not the band structure of the substrate but is the DOS of the group orbital involved in the chemisorp-

tion bond [6]. However, these ideas are not correct for the ordered overlayers as mentioned below.

In the case of the ordered overlayers, the geometrical

structure and the substrate band structure are very

important for the chemisorption behaviour : The

general behaviour of the on-site àp(E) curves in figure 7 (ordered overlayers on the sc(OOl) surface)

differs almost completely from those of the centred fourfold-site Ap(E) curves in figure 4 (ordered° over- layers on the bcc(001) surface), in contrast to the case

of the single atom chemisorption. This indicates that the indirect interactions between the adatoms depends strongly on the geometrical structure of the overlayer

and the substrate band structure.

Furthermore, there are other important features in the àp(E) curves in figure 7. (1) The shapes of the bonding and anti-bonding resonances are skewed

compared with the resonances for the single atom adsorption (Fig. 8). (2) They depend strongly on the types of the structure of the overlayers, i.e., the long-range atomic environment of the adatoms.

(3) For the C(2 x 2) overlayer, there is a non-bonding

resonance peak near the adatom energy level Ea (here-after referred to as the type II non-bonding states), in addition to the bonding and anti-bonding

resonance peaks. It is clear that this non-bonding

state does not belong to the type 1 non-bonding states

since the adatoms are situated in the on-site positions.

In figure 9, we show the positions of the localized

electronic states with respect to the energy band along

the segments in the SBZ, ky

=

0, 0.3 x, 0.5 x, and

0.8 x. The solid curves and the dashed curves repre- sent the results for the (2 x 1) and C(2 x 2) over- layers, respectively : Ea

= -

0.375 and Vt

=

2.25.

For both overlayers, there are states derived from the

anti-bonding (above the band) and the bonding (below the band) split-off-states. In addition, there are

localized electronic states near the adatom energy level Ea for the C(2 x 2) overlayers. From this, one

can see that the type II non-bonding states are the wave

vector (k,l) dependent localized states and are not the degenerate states at E = Ea (type 1 non-bonding states). Furthermore, if the energy spectrum (localized

electronic states) is drawn at a given kll in the ABZ,

one can see that these localized states exist in a gap

(centred on E

=

0) between the two substrate bands for certain ranges of kil. Therefore, the type II non- bonding (localized) states result from the existence of the gap between the two substrate bands, i.e., from

Fig. 9.

-

The positions of the localized electronic states for the ordered overlayers

on

the sc(001) surface along the segments;

(a) ky = 0, (b) ky

=

0.3 1t, (c) ky

=

0.5 1t, and (d ) ky

=

0.8

n.

Ea

= -

0.375 and V,

=

2.25. The

arrows

below figures (a), (b), (c)

and (d) indicate the boundary of the ABZ.

the lower translational symmetries of the ordered

overlayers. From the considerations mentioned above,

these non-bonding states (type 1 and type II) are essentially different in nature from those for the single

atom chemisorption of references [24-26], where the non-bonding peak appears due to the minimum in the substrate DOS.

4. Conclusions.

-

We have obtained the change

in the electronic DOS, àp(E), due to the adsorption

of the ordered atomic layers with 0

=

1/2 on the (001)

surfaces of the model transition (one-band tight- binding model) metals. The calculations of the Ap(E)

have been performed for the C(2 x 2) and (2 x 1) overlayers and both for the sc and bcc substrate models. In addition, the effects of the adsorption

geometry on the chemisorption behaviours have been

extensively studied. To our knowledge, this is the first time that the change in the electronic DOS is calculated for the ordered overlayers with 0 * 1.

In general, we have found that the results of the

dp(E) for the C(2 x 2) structure differ significantly

from those for the (2 x 1) structure. Furthermore,

the àp(E) curves for the ordered overlayers with 6=1/2 differ dramatically both from those for the single atom adsorption (8 N 0), and from those for the

monolayer chemisorption (0

=

1), regarding the shape (the asymmetry increases with coverage) and positions

of the resonance peaks. These features (change in the

chemisorption behaviour with coverage) are in fact

(10)

307

seen in the photoemission spectra observed for the system such as HIW(100) [27].

The present work has also shown that two kinds

(type I and type II) of the non-bonding states exist

for the ordered overlayers with 0

=

1/2 : The type 1 non-bonding states appear due to the symmetry of the

adlayer (centred fourfold-site adsorption) while the type II non-bonding states appear due to the lower translational symmetries of the ordered overlayers.

Upon comparing figures 4 and 7, we have further demonstrated that the band structure of the substrate is very important for the chemisorption behaviours of the ordered overlayers. The behaviour of the centred fourfold-site àp(E) curves for the overlayers on the bcc(001) surface differs almost completely from

that of the on-site Ap(E) curves for the overlayers on the sc(OOl) surface, in spite of the similarity of the

Green’s functions for the single atom adsorptions.

This implies that the indirect interactions between the adatoms play the leading role in the chemisorption

of the ordered atomic layers.

Finally, we note that the present approach could

in a straightforward way be used to treat the ordered

overlayers with other adsorbate coverages. In the

Appendix, we present the formulation for treating

the overlayers with 0=1/4, i.e. (2 x 2) and (4 x 1) overlayers.

Acknowledgment.

-

The author is very grateful to

the Sakkokai Foundation for financial support.

Appendix.

-

In this Appendix, we derive the partial phase-shift functions tl,(k Il ; E) for the ordered over-

layers with 0

=

1/4, i.e. (2 x 2) and (4 x 1) overlayers (Fig. 10) on the (001) surface of the sc and bcc metals.

The method for obtaining the partial phase-shift functions and the change in the electronic DOS for the over-

layers with 6

=

1 /4 is similar to that for the overlayers with 0

=

1/2. From the physical considerations that an

electron in the overlayer orbital 0, kl, E ABZ ) can hop into the first layer substrate orbitals l, kl, > and

l 1, k ~ + Khi > (where k E ABZ and Khi (i

=

l, 2, and 3) denotes the three different reciprocal lattice vectors for

the overlayer with 0

=

1/4), one can obtain the following expressions for 1,(k Il ; E).

Fig. 10. - ABZ for the (2

x

2) and (4

x

1) overlayers

on

the (001)

surface of the

sc

and the bcc lattice. The lattice constant (a) is set equal to unity.

For the on-site adsorption,

and

In the case of the centred fourfold-site adsorption, these partial phase-shift functions are respectively given

by

(11)

and

References [1] NEWNS, D. M., Phys. Rev. 178 (1969) 1123;

GRIMLEY, T. B., Ber. Bunsenges. Phys. Chem. 75 (1971) 1003.

[2] DEROUANE, E. G. and LUCAS, A. A., Electronic structure and

Reactivity of Metal Surfaces (New York : Plenum) 1976.

[3] SCHRIEFFER, J. R. and SOVEN, P., Phys. Today 28 (1975) 24.

[4] ALLAN, G., Ann. Phys. 5 (1970) 169.

[5] EINSTEIN, T. L., Surf. Sci. 45 (1974) 713; Phys. Rev. B 12 (1975) 1262.

[6] HO, W., CUNNINGHAM, S. L. and WEINBERG, W. H., J. Vac.

Sci. Technol. 13 (1976) 349; Surf. Sci. 54 (1976) 139.

[7] CYROT-LACKMANN, F., DESJONQUÈRES, M. C. and GASPARD, J. P., J. Phys. C 7 (1974) 925.

[8] HAYDOCK, R. and KELLY, M. J., Surf. Sci. 38 (1973) 139.

[9] MORÁN-LÓPEZ, J. L., KERKER, G. and BENNEMANN, K. H., Surf. Sci. 57 (1976) 540.

[10] EINSTEIN, T. L. and SCHRIEFFER, J. R., Phys. Rev. B 7 (1973)

3629.

[11] BURKE, N. R., Surf. Sci. 58 (1976) 349.

[12] HO, W., CUNNINGHAM, S. L. and WEINBERG, W. H., Surf. Sci.

62 (1977) 662.

[13] HO, W., CUNNINGHAM, S. L. and WEINBERG, W. H., Surf. Sci.

66 (1977) 495.

[14] MASUDA, K., Phys. Status Solidi 87b (1978) 739.

[15] SOMORJAI, G. A., Surf. Sci. 34 (1973) 156.

[16] KALKSTEIN, D. and SovEN, P., Surf. Sci. 26 (1971) 85.

[17] Ho, W., CUNNINGHAM, S. L., WEINBERG, W. H. and DOBRZYNSKI, L., Phys. Rev. B 12 (1975) 3027.

[18] MUSCAT, J. P., LANNOO, M. and ALLAN, G., J. Physique

38 (1977) 519.

[19] BLANDIN, A., J. Physique Radium 22 (1961) 507.

[20] TOULOUSE, G., Solid State Commun. 4 (1966) 593.

[21] DOBRZYNSKI, L. and MILLS, D. L., Phys. Rev. B 7 (1973) 2367.

[22] EINSTEIN, T. L., Phys. Rev. B 16 (1977) 3411.

[23] MUDA, Y. and HANAWA, T., Surf. Sci. 66 (1977) 145.

[24] LYO, S. K. and GOMER, R., Phys. Rev. B 10 (1974) 4161.

[25] GRIMLEY, T. B., Prog. Surf. Membrane Sci. 9 (1975) 71.

[26] MASUDA, K., Z. Naturforsch. 31a (1976) 1344; Commun.

Phys. 2 (1977) 77.

[27] FEUERBACHER, B. and FITTON, B., Phys. Rev. B 8 (1973) 4890.

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