TCO contacts for high efficiency c-Si solar cells: Influence of different annealing steps on the Si substrates and TCO layers properties

 If for high resistivity collectors the sheet resistance of the ITO layer needs to be below 150 Ω/sq, for homojunction devices the use of ITO layers with

FIG.. The fit between experimen- tal 6 A and 6 Y readings at 0.25 V and the best calculated curve obtained under the assumption of uniform iso- tropic film growth due

With these additional annealing steps after the high tem- perature co-evaporation process, four different types of absorbers were fabricated: high temperature co-evaporation (sample

It was possible to identify benefits of TCO for decision-making support at each life cycle phase of an asset and it emerged that its application can have positive effect on

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

Fig. The fact fringe system is not well defined, is related to a poor crystallogr quality of the layer. Nevertheless, the moire spacing, equal to 5.4 nm, that the

The effect of the dynamic flow conditions on biofilm devel- opment at the surface of the different plates was studied using a shear cell (Fig. Tests were performed on Na-Mor and Cu-

Towards silicon quantum dot solar cells : comparing morphological properties and conduction phenomena in Si quantum dot single layers and multilayers.. Université de