BF245A/ B F 2 4 5 B/BF245C

©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003

BF245A/ B F 2 4 5 B/BF245C

Absolute Maximum Ratings

Electrical Characteristics

Symbol Parameter Value Units

V_DG Drain-Gate Voltage 30 V

V_GS Gate-Source Voltage -30 V

I_GF Forward Gate Current 10 mA

P_D Total Device Dissipation @T_A=25°C Derate above 25°C

350 2.8

mW mW/°C T_J, T_STG Operating and Storage Junction Temperature Range - 55 ~ 150 °C

Symbol Parameter Test Condition Min. Max. Units

Off Characteristics

V_(BR)GSS Gate-Source Breakdown Voltage V_DS = 0, I_G = 1µA -30 V V_GS Gate-Source BF245A

BF245B BF245C

V_DS = 15V, I_D = 200µA -0.4 -1.6 -3.2

-2.2 -3.8 -7.5

V

V_GS(off) Gate-Source Cut-off Voltage V_DS = 15V, I_D = 10nA -0.5 -8 V

I_GSS Gate Reverse Current V_GS = -20V, V_GS = 0 -5 nA

On Characteristics

I_DSS Zero-Gate Voltage Drain Current BF245A BF245B BF245C

V_GS = 15V, V_GS = 0 2 6 12

6.5 15 25

mA

On Characteristics

g_fs Common Source Forward Transconductance

V_GS = 15V, V_GS = 0, f = 1KHz 3 6.5 mmhos

BF245A/BF245B/BF245C

N-Channel Amplifiers

• This device is designed for VHF/UHF amplifiers.

• Sourced from process 50.

1. Gate 2. Source 3. Drain TO-92 1

©2003 Fairchild Semiconductor Corporation Rev. A1, June 2003

BF245A/ B F 2 4 5 B/BF245C

Package Dimensions

Dimensions in Millimeters 0.46 ±0.10

1.27TYP

(R2.29)

3.86MAX

[1.27 ±0.20]

1.27TYP [1.27 ±0.20]

3.60 ±0.20

14.47 ±0.40

1.02 ±0.10 (0.25)4.58 ±0.20

4.58^+0.25_–0.15

0.38^+0.10–0.05

0.38+0.10 –0.05

TO-92

©2003 Fairchild Semiconductor Corporation Rev. I2

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