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Gate control of the electron spin-diffusion length in semiconductor quantum wells

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Academic year: 2021

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Figure

Figure 1 | Gate control of the spin-diffusion length. (a) Variation of the spin-diffusion length L s ¼ p ffiffiffiffiffiffiffiffiffiDsTs
Figure 3 | Electron spin diffusion. (a) Time evolution of the spin-grating (SG) signal as a function of the delay between the pump and the probe laser pulses for V ¼ 1 volt
Figure 5 | Simultaneous measurement of the Dresselhaus and Rashba coefficients. Variation of bþ 2r 41 E as a function of the applied electric field E in the device

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