Epitaxial La0.7Sr0.3MnO3 thin films grown on SrTiO3 buffered silicon substrates by reactive molecular-beam epitaxy

Reflection high energy diffraction (RHEED), double crystal x-ray diffraction (DCXRD) and transmission electron microscopy (TEM) measurements revealed that Co 2 FeSi layers

are threading dislocations and stacking faults for both types of samples, but the introduction of the intermediate layers leads to the formation of two types of

Table 1: ASR WER comparison using acoustic model trained on different train and development datasets with and without applying the weighting algorithm.. 1: FER on the development

Ellipsometric spectra of a monocrystalline wafer (black line), an epitaxial layer (blue squares) and a solar cell made of an epitaxial layer with an amorphous emitter on top

In MOVPE, high growth temperatures ( Tg> 700°C) inhibit ordering while lower temperatures tend to favor it. Figure 2.8 illustrates the impact of the growth temperature on

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We demonstrate here that La 0.7 Sr 0.3 MnO 3 films deposited on CaTiO 3 / Si indeed showed enhanced electrical properties (e.g., lower electrical resistivity and 1/ f noise, and

The variations in the resonance fields versus their orien- tation for both samples was studied by conventional FMR as a function of the temperature in view of deriving the tem-