SymbolFeatures Packaging Ordering Information Applications 50A, 600V Hyperfast Diode RHRG5060

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File Number 3920.2

RHRG5060

50A, 600V Hyperfast Diode

The RHRG5060 is a hyperfast diode with soft recovery characteristics (t_rr < 45ns). It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.

This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.

Formerly developmental type TA49065.

Symbol

Features

• Hyperfast with Soft Recovery . . . <45ns

• Operating Temperature . . . .175^oC

• Reverse Voltage . . . .600V

• Avalanche Energy Rated

• Planar Construction

Applications

• Switching Power Supplies

• Power Switching Circuits

• General Purpose

Packaging

JEDEC STYLE TO-247

Ordering Information

PART NUMBER PACKAGE BRAND

RHRG5060 TO-247 RHRG5060

NOTE: When ordering, use the entire part number.

K

A

(BOTTOM SIDE METAL)

ANODE

CATHODE CATHODE

Absolute Maximum Ratings

T_C = 25^oC, Unless Otherwise Specified

RHRG5060 UNITS Peak Repetitive Reverse Voltage . . . V_RRM 600 V Working Peak Reverse Voltage . . . V_RWM 600 V DC Blocking Voltage . . . V_R 600 V Average Rectified Forward Current . . . I_F(AV)

(T_C = 93^oC)

50 A

Repetitive Peak Surge Current . . . I_FRM (Square Wave, 20kHz)

100 A

Nonrepetitive Peak Surge Current . . . I_FSM (Halfwave, 1 Phase, 60Hz)

500 A

Maximum Power Dissipation . . . P_D 150 W Avalanche Energy (See Figures 10 and 11) . . . E_AVL 40 mJ Operating and Storage Temperature . . . T_STG, T_J -65 to 175 ^oC

Data Sheet January 2000

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Electrical Specifications

T_C = 25^oC, Unless Otherwise Specified

SYMBOL TEST CONDITION MIN TYP MAX UNITS

V_F I_F = 50A - - 2.1 V

I_F = 50A, T_C = 150^oC - - 1.7 V

I_R V_R = 600V - - 250 µA

V_R = 600V, T_C = 150^oC - - 1.5 mA

t_rr I_F = 1A, dI_F/dt = 100A/µs - - 45 ns

I_F = 50A, dI_F/dt = 100A/µs - - 50 ns

t_a I_F = 50A, dI_F/dt = 100A/µs - 25 - ns

t_b I_F = 50A, dI_F/dt = 100A/µs - 20 - ns

Q_RR I_F = 50A, dI_F/dt = 100A/µs - 65 - nC

C_J V_R = 10V, I_F = 0A - 140 - pF

R_θJC - - 1.0 ^oC/W

DEFINITIONS

V_F = Instantaneous forward voltage (pw = 300µs, D = 2%).

I_R = Instantaneous reverse current.

t_rr = Reverse recovery time (See Figure 9), summation of t_a + t_b. t_a = Time to reach peak reverse current (See Figure 9).

t_b = Time from peak I_RM to projected zero crossing of I_RM based on a straight line from peak I_RM through 25% of I_RM (See Figure 9).

Q_RR = Reverse recovery charge.

C_J = Junction Capacitance.

R_θJC = Thermal resistance junction to case.

pw = pulse width.

D = Duty cycle.

Typical Performance Curves

FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE V_F, FORWARD VOLTAGE (V)

1 300

10

0 0.5 1 1.5 2 2.5

IF, FORWARD CURRENT (A)

3 25^oC

175^oC 100^oC 100

0 200 300 400 600

100

0.01 0.1 1 10 1000

100 500

100^oC 175^oC

25^oC

V_R, REVERSE VOLTAGE (V) IR, REVERSE CURRENT (µA)

3000

RHRG5060

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FIGURE 3. t_rr, t_aAND t_bCURVES vs FORWARD CURRENT FIGURE 4. t_rr, t_aAND t_bCURVES vs FORWARD CURRENT

FIGURE 5. t_rr, t_aAND t_bCURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE

FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE

Typical Performance Curves

(Continued)

I_F, FORWARD CURRENT (A) 1

0 40 60

50

50 trr

tb 30

ta 20

t, RECOVERY TIMES (ns)

10 10

T_C = 25^oC, dI_F/dt = 100A/µs

ta trr

tb

0 100 150

125

50 75

50

10 25

T_C = 100^oC, dI_F/dt = 100A/µs

ta

trr

0 250

50 150

100

10

50 tb

200

T_C = 175^oC, dI_F/dt = 100A/µs

50

10

0

100 125

75 150 175

20 30 40

DC

T_C, CASE TEMPERATURE (^oC) SQ. WAVE

IF(AV), AVERAGE FORWARD CURRENT (A)

25 50

V_R, REVERSE VOLTAGE (V) 200

100

0 300

0 50 100 150 200

CJ, JUNCTION CAPACITANCE (pF) 350

250

50 150

RHRG5060

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.

Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site www.intersil.com

Test Circuits and Waveforms

FIGURE 8. t_rr TEST CIRCUIT FIGURE 9. t_rr WAVEFORMS AND DEFINITIONS

FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS

R_G L

V_DD IGBT

CURRENT SENSE DUT

V_GE t₁

t₂ V_GE AMPLITUDE AND t_{1 AND}t₂CONTROL I_F R_G CONTROL dI_F/dt

+

-

dt dI_F

I_F trr

ta tb

0

I_RM 0.25 I_RM

DUT CURRENT

SENSE

+

L R

V_DD R < 0.1Ω

E_AVL= 1/2LI² [V_R(AVL)/(V_R(AVL) - V_DD)]

Q₁= IGBT (BV_CES > DUT V_R(AVL))

-

V_DD Q₁

I_MAX = 1.4A L = 40mH

I V

t₀ t₁ t₂

I_L V_AVL

t I_L