• Aucun résultat trouvé

SEMICONDUCTORS OF THE TYPE MeIIMeIVS3

N/A
N/A
Protected

Academic year: 2021

Partager "SEMICONDUCTORS OF THE TYPE MeIIMeIVS3"

Copied!
2
0
0

Texte intégral

(1)

HAL Id: jpa-00216286

https://hal.archives-ouvertes.fr/jpa-00216286

Submitted on 1 Jan 1975

HAL is a multi-disciplinary open access archive for the deposit and dissemination of sci- entific research documents, whether they are pub- lished or not. The documents may come from teaching and research institutions in France or abroad, or from public or private research centers.

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des établissements d’enseignement et de recherche français ou étrangers, des laboratoires publics ou privés.

SEMICONDUCTORS OF THE TYPE MeIIMeIVS3

U. Alpen, E. Gmelin, A. Rabenau

To cite this version:

U. Alpen, E. Gmelin, A. Rabenau. SEMICONDUCTORS OF THE TYPE MeIIMeIVS3. Journal de Physique Colloques, 1975, 36 (C3), pp.C3-82-C3-82. �10.1051/jphyscol:1975316�. �jpa-00216286�

(2)

JOURNAL DE PHYSIQUE Colloque C3, supplkment au no 9, Tome 36, Septembre 1975, page C3-82

SEMICONDUCTORS OF THE TYPE Me"MeIVS,(*)

U. V. ALPEN, E. G M E L I N and A. RABENAU

Max-Planck-Institut fiir Festkijrperforschung, 7 Stuttgart l , P. B. 1099, RFA

Rksumk. - Les composCs du type MeJIMeIVS3 (Me" = Sn, Pb ; MeIV = Ge, Sn) se prC- sentent dans deux groupes de symktrie isotypique : MeHSn1vS3 orthorhombique et MelxGelVSs monoclinique. Nous avons prCparC des monocristaux suffisamment grands, afin de pouvoir dCter- miner les propriettts physiques fondamentales de ces compods : conduction Clectrique, absorption optique aupres du gap Clectronique fondamental. Les rbsultats ont BtC discutks en vue des struc- tures cristallines diffkrentes.

Abstract. -Ternary compounds of the type MeHMcIvS, with thc elements Me" = Sn, Pb and MeIV = GC, Sn form two isotypic groups, with orthorhombic (Me11SnIvS3) and monoclinic (Me"GeIVS3) symmetry respectively. Single crystals of sufficiently large size have been prepared to examine some basic physical properties. Results on electrical conductivity, and optical absorp- tion measurements at the fundamental electronic gap are reported. They will be discussed with respect to the crystal structures.

(*) Article published in Mat. Res. B~rll. 10 n03 (1975) 175-180.

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1975316

Références

Documents relatifs

 Enfin, le chapitre VI décrit un appareil qui a été développé spécifiquement pour la mesure directe de l’effet magnétocalorique, c'est-à-dire la variation de

Penndorf , sont reprises au tableau XV. Dans le domaine de longueur d'onde du continuum de Herzberg et des premières bandes de Schumann-Runge, Ditchburn. Ils ont en plus

Flg. 1 Transmissbn of a 0.8pm CIS sample at T=300Kversus input power at two wavelengths of the Ar* lawr. 2 First-order degenerate four-wave mixing efficiency versus photon

This occurs because, in an electron gas obeying degenerate statistics, phonon emission with simultaneous conservation of energy and momentum between initial and final

If the second term (which is essentially just the loga- rithmic derivative of an elastic constant) is dominant one might indeed expect (9) to be reasonably constant. This

Mesures physiques 1ère année Cours de

i j In performing the subsequent Anergy inte- grations, we use the fact thaz BE^>>^ to approximate the integrals by their (exponentially large) maximum multiplied by

2014 The optical absorption in doped direct gap semiconductors in which the conduction band may be considered as a degenerate Fermi system is studied near