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HAL Id: jpa-00218515

https://hal.archives-ouvertes.fr/jpa-00218515

Submitted on 1 Jan 1979

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PHASE COMPOSITION OF SnOx THIN FILMS OBTAINED BY REACTIVE DC SPUTTERING

E. Leja, J. Korecki, K. Krop, K. Toll

To cite this version:

E. Leja, J. Korecki, K. Krop, K. Toll. PHASE COMPOSITION OF SnOx THIN FILMS OBTAINED

BY REACTIVE DC SPUTTERING. Journal de Physique Colloques, 1979, 40 (C2), pp.C2-408-C2-

408. �10.1051/jphyscol:19792142�. �jpa-00218515�

(2)

JOURNAL DE PHYSIQUE

Colloque C2, suppl6ment au n 3, Tome 40, mars 1979, page C2-408

PHASE COMPOSITION OF SnO, THIN FILMS OBTAINED BY REACTIVE D C SPUTTERING

E. Leja, J. Korecki, K. Krop and K. Toll

Department of Solid State Physics I M , University o f ~ n i n g and MetaZlurgy, CracozJ, Poland.

RQsum6.- Par pulv6risation sur l'Qtain mbtallique en atmosphPre Ar+02 (taux de O2 variable) un mat6- riau du type SnO, (1,<x<2) a Qtb obtenu. L'analyse des phases en prgsence, rbalisde par spectrombtrie Mzssbauer et rayonsx, permet de caractdriser la variation du taux de SnOn dans l'bchantillon.

Abstract.- Transparent and conducting thin SnOl films have numerous applications as heating elements, antistatic coatings and light transmitting electrodes. The aim of this work was to determine the pha- se composition of the SnOx (1<x<2) thin films obtained on the glass substrates by DC reactive sput- tering of metallic tin. The samples were prepared in Ar+Oz mixture for which oxygen concentration was varied. The Mgssbauer spectra for six samples obtained at various oxygen concentration in the chamber during the sputtering were measured in a transmission geometry using the BaSn source. The measure- ments were done at room and liquid nitrogen temperatures. The isomer shift and quadrupole splitting values of pure and stoichiometric Sn02, a-SnO and B-Sn were used for the identification of the phases which are observable in the MS. The fitted values of the Mzssbauer parameters for the measured spec- tra are listed in Table I. As expected the fraction for the SnOz phase increases with oxygen concen- tration in the cahmber, on the contrary the fraction of the SnO decreases and dor the higher oxygen concentrations the films are composed of the SnO2 phase only. Due to the small recoil free fraction for the Sn lattice at room temperature, the MS taken at 293 K are free from the lines which might be attributed to that phase. At liquid nitrogen temperature at which recoil free fractions for Sn, SnO and SnOz are comparable the Sn phase was found in the film obtained at the lowest oxygen concentra- tion 4.8%. The percentage contribution of the particular phases present in the films were estimated comparing the areas over the MS lines and taking to the account the different values of the recoil free fractions. The samples were also X-ray analysed. The &Sn and a-SnO phases are being revealed in the diffraction pattern for the sample obtained at 4.8% oxygen concentration in the chamber. Only the a-SnO phase was recorded in the samples obtained at 6.8% and 8.0% oxygen concentration. In the other samples the SnOn phase appears in addition to the disappearing SnO phase. Our conclusions are :

l / For the low oxygen concentration in the chamber, the SnOn phase turns out to be a noncrystalline

solid solution in the SnO matrix; 2/ As the oxygen concentration increases the amount of the a-SnO phase diminishes and the SnOz crystalline phase emages.

Table I

l l

Sn t SnO I SnOn

'On

i

IS

:

QS

:

% ~ n

j

1s

:

QS

: I' :

X S ~ O

i

1s

:

QS

r :

% S ~ O Z

'

l I

,

t f 1 I 7 I 1

:

293K:

- - - :

2.57: 1.31: 0.83: :-0.07

:

0.69

:

0.71

:

4.8 l 7 8 ~ 1

' 0 6 8

'

---

f-

---

t--?.15_6_-tttL

f---Zi---;-2155-;-1L23-;--o_28Ii-i59---~-oLo_2-;-c2sZ--ff

GLzL-;---z---

:

293 K:

- ' - - :

2.42

:

1.80

:

1.08

: :

0.40

:

0.75

:

0.96

:

6.8 I 7 8 ~ '

- : - ' -

' 2 6 3 ' 1 8 6 - ' 1 0 9 '

---L

---

L +

+ ---

+--A---+--:--

+---l---$--72---;-o,22-;-0220_--;-LL10-;CC21---

:

293 K:

- : - -

: 2 . 5 8 : 1.91: 1.01:

:

0.23

:

0.65

:

1.12

:

8 1

9

-

1 - 1 - 1 -

' - ' - ' -

13.8

,

:-0.05

:

0.53

:

0.72

:

100

l

-

I - 1 - 1 -

-

1 -

L--Z~-KL---Z---L~~~~~~-+---~--- ;

+ -+

i

0.02

i

0.56

i

0.79 f-100 2 9 3 K '

-

1

-

1

-

:

293 K: 1 1 - :-0.05

:

0.55

:

0.83

:

100

100 78K; I s , Q s a n d r i n d s .

: - - :

0.06

:

0.53

:

0.71

:

100

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:19792142

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