HAL Id: hal-02060609
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Submitted on 7 Mar 2019
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Coupling of quantum emitters in 4H SiC nanopillars
A Al Atem, A Almutairi, S Castelletto, Nicolas Chauvin, B Canut, G Guillot, J Bluet
To cite this version:
A Al Atem, A Almutairi, S Castelletto, Nicolas Chauvin, B Canut, et al.. Coupling of quantum emitters in 4H SiC nanopillars. Crystal defects for qubits, single photon emitters and nanosensors, Jul 2018, Brème, Germany. 2018. �hal-02060609�
Coupling of quantum emitters in 4H SiC nanopillars
Aim
Develop a scalable integrated process compatible with standard CMOS technologies, to optimise light collection from quantum emitters in SiC.
Applications : Technological building block for
Single Photon Source
Platform for optical spin manipulation
PL and LTPL results
n// = 2.55 n = 2.59
𝛌 = 𝟗𝟎𝟎 𝒏𝒎 𝟏𝟏𝟎𝟎 𝒏𝒎 𝟏𝟐𝟓𝟎 𝒏𝒎
NA = 0.4
Dipole : // or at 2µm from top
Conclusion
Development of a scalable fast and costless process to design nanopillars in SiC ;
Evidence of VSi and VSiVC signal enhancement ; Confirmation of V1, V2 line polarisation.
Next
µ-Pl : spectral, LT, NIR excitation, Single …
A.S. Al Atem
1, A. F. Almutairi
2, S. Casteletto
2, N. Chauvin
1, B Canut
1, G. Guillot
1and J. M. Bluet
11 Univ Lyon, INSA Lyon, CNRS, INL, UMR5270, F-69621 Villeurbanne, France
2 RMIT University, School of Engineering, Cnr. Plenty Rd & McKimmies Lane, Bundoora, Melbourne, VIC 3083, Australia.
Abdul Salam Al Atem thesis is supported by a doctoral research grant from the Région Auvergne Rhône-Alpes
State of the art
Emission enhancement PhC coupling approach
Collection enhancement Guiding approach
Calusine et al. APL 105(1), p.
11123, 2014
Radulaski et al. , Nano Letter 17(3), pp1782-1786,2017.
Approach
Realization of nano pillars array using optical lithography (laser lithography, l=350 nm) and ICP etching (SF6/O2).
Sample : 4H n-type SiCrystal
SiC-4H
FDTD Simulations
0.0 0.2 0.4 0.6 0.8 1.0 1.0
1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
Effective refractive index
D/l
HE11 TE01 TM01 HE21 EH11 HE12 HE31 EH21 TE02 TM02 HE41 HE22 EH31
Defect l
(nm) D/l F F//
VSi 900 0.83 18 159 VSi-VC 1100 0.68 3 59
NV 1250 0.6 0.9 265
Multimodal structure of guided wave depending on defect (l). F is quite bigger for // pillar (// c axis) polarised emitter due to very poor collection for bulk in this configuration.
𝐹 = 𝐼𝑐𝑜𝑙𝑙. −𝑝𝑖𝑙𝑙𝑎𝑟
𝐼𝑐𝑜𝑙𝑙. −𝑏𝑢𝑙𝑘
H+ Implantation at 300 keV (Rp=2µm)
𝑭𝒍𝒖𝒆𝒏𝒄𝒆 = 𝟏𝟎𝟏𝟑 𝒄𝒎−𝟐
𝟏𝟎𝟏𝟔 𝒄𝒎−𝟐 𝑻𝒂𝒏𝒏𝒆𝒂𝒍 = 𝒖𝒏𝒂𝒏𝒏𝒆𝒂𝒍𝒆𝒅 𝟕𝟓𝟎°𝑪 𝟗𝟎𝟎°𝑪
532 nm ; 315W
On 1013cm-2 sample : 900 kcts.s-1 at 40 µW 30 times bulk signal
780 nm ; 41 mW
Long pass 850 nm :
Saturation at 1,6 MCts.s-1
0,0001 0,001 0,01 0,1 1
0 5 10 15
counts (a.u.)
time/ns
Spectral
NIR excitation
Singles
LTPL results
collective excitation
Global enhancement factor 2-3 times but quite higher for V1 and V2 line according to FDTD simulation. Indeed V1 is polarised // to c- axis [1] while V1’ is polarised around 60° to c-axis [2].
671 nm 100 W.cm-2 T=12K
0.8 0.9 1.0 1.1 1.2 1.3
0 100 200 300 400 500 600 700 800 900 1000
PL3
1.127 eV 1.122 eV
PL Intensity (a. u. )
Energy (eV)
Without Pillars Pillars
1.100 eV
PL1/PL2
1.153 eV
PL4
unknown
References : [1] Janzén E, et al. (2009), Physica B 404:4354–4358.
[2] Bracher et al, PNAS, vol, 114 n°16, 406-4065, 2017
t = 2 ns
