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Hall effect and electrical resistivity of Tb75-Gd25 near the Curie point
J.M. Moreira, M. M. Amado, M. Ê. Braga, J.B. Sousa
To cite this version:
J.M. Moreira, M. M. Amado, M. Ê. Braga, J.B. Sousa. Hall effect and electrical resis- tivity of Tb75-Gd25 near the Curie point. Journal de Physique, 1984, 45 (4), pp.779-789.
�10.1051/jphys:01984004504077900�. �jpa-00209811�
Hall effect and electrical resistivity of Tb75-Gd25 near the Curie point
J. M. Moreira, M. M. Amado, M. Ê. Braga and J. B. Sousa Centro de Fisica da Universidade do Porto, 4000 Porto, Portugal (Reçu le 11 mai 1983, révisé le 14 novembre, accepte le 9 décembre 1983)
Résumé.
2014On présente des résultats de
mesuresde haute précision
surla résistivite de Hall (03C1H),
sadérivée par rapport à la température (d03C1H/dT), la résistivité électrique (p) et
sadérivée d03C1/dT pour
unalliage polycristallin ferromagnétique Tb75-Gd25 et pour des températures 77-360 K. On
amesuré aussi la susceptibilite magnétique (~)
au
voisinage et au-dessus du point de Curie.
Les différentes contributions à la résistivité électrique sont séparées, notamment les termes de désordre de spin,
résiduel et de phonons;
onessaie
unecomparaison
avecla théorie. Pour la résistivité de Hall, le termes normal
(03C1oH) et le terme extraordinaire (psH) sont obtenus, avec les constantes de Hall correspondantes (R0, Rs).
Des anomalies bien marquees sont observées pour d03C1/dT et d03C1H/dT dans la région de transition, montrant
l’existence d’un point critique bien défini. L’analyse montre que (1/03C1c).(d03C1/dT)+ (A±/03B1). (1 - | 03B5|-03B1 + B±,
avec 03B5
= (T - Tc)/ Tc, (+) (-) signifiant T > Tc, T Tc, respectivement. On obtient Tc
=244,79 K,
03B1_ =03B1+ ~ - 0,001, A+/A_ ~ 0,88, pour 1,2
x10-4
03B50,7
x10-2 et 6,2
x10-3 |03B5| 2,6
x10-2.
Pour d03C1H/dT la situation est complexe, à
causede l’effet du champ magnétique appliqué. Notre analyse montre
l’existence d’effets importants de fluctuation près de Tc,
comme onle voit dans dRs/dT.
L’effet Hall extraordinaire de Tb75-Gd25 est analysé pour séparer les différentes contributions, c’est-à-dire, les termes de diffusion gauche et de saut latéral,
entenant compte des effets de plusieurs hamiltoniens de diffusion
(Kondo, Smit). Nous montrons que 03C1sH dans Tb75-Gd25 peut être expliqué par des contributions Kondo (gauche et saut-latéral) et Smit (saut-latéral).
Finalement,
onessaie d’obtenir la température de Curie du Tb75-Gd25 à partir des points de transition du Tb et Gd,
enutilisant la théorie des alliages binaires magnétiques aléatoires de terres
rares.Abstract
2014Fairly detailed and accurate data is presented for the Hall resistivity (03C1H), temperature derivative
(d03C1H/dT), electrical resistivity (p), and derivative d03C1/dT in
aferromagnetic Tb75-Gd25 polycrystalline alloy,
overa
wide range of temperatures (77-360 K). Magnetic susceptibility data (~)
nearand above the Curie point is also
included.
The different contributions to the electrical resistivity
areseparated out, including the spin-disorder, residual
and phonon terms, the results being compared with theory. For the Hall resistivity, the normal (03C1oH) and the extra- ordinary (03C1sH) terms
areobtained, with the corresponding Hall constants (R0, Rs).
Very sharp anomalies
areobserved both in d03C1/dT and d03C1H/dT in the transition region, indicative of
awell defin- ed critical point in
ourconcentrated random magnetic alloy. The critical analysis shows that (1/03C1c). (d03C1/dT)±=
(A±/03B1). (1 - |03B5|-03B1) + B±, with 03B5 = (T - Tc)/Tc, and (+) (-)
meansT > Tc, T Tc, respectively. We obtain, Tc
=244.79 K,
03B1_ =03B1+ = - 0.001, A+ /A_ ~ 0.88,
overthe range 1.2
x10-4 03B5 0.7
x10-2 and 6.2
x10-3 |03B5| 2.6 10-2.
For d03C1H/dT the situation is complex, due to the effect of the applied magnetic field. Our analysis shows the
existence of important fluctuation effects
nearTc,
asgiven by the derivative dRs/dT.
The extraordinary Hall resistivity in Tb75-Gd25 is extensively analysed here, in order to separate out the diffe-
rent contributions, i.e. the skew and side-jump terms, including the effects of several possible scattering Hamil-
tonians (Kondo, Smit). We show that 03C1sH in Tb75-Gd25
canbe accounted for in terms of
aKondo (skew and side- jump) and
aside-jump Smit contribution.
Finally, the Curie temperature of Tb75-Gd25 is related to the transition points of Tb and Gd, using the theory
of binary
rareearth random magnetic alloys.
Classification
Physics Abstracts
75.12E - 72.15G
1. Introduction.
The study of the critical behaviour of disordered sys- tems has received considerable attention in the case of
a completely amorphous system [1] ] and in the case
of a crystalline system with a random distribution of
magnetic moments [2-5]. The alloy investigated here
falls in the second category, with Tb and Gd forming
solid solutions at all compositions (hcp structure).
Transport properties are particularly sensitive to
the presence of atomic or magnetic order, and so we
studied the behaviour of the Hall resistivity (pH),
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:01984004504077900
the temperature derivative (dpH/dT), the electrical
resistivity (p) and the temperature derivative (dp/dT)
over a wide range of temperatures (77-360 K), for a highly concentrated Tb-Gd alloy (Tb7,-Gd25; fer- romagnetic). Particular detail was obtained in the immediate vicinity of the Curie point, Tc
=244.8 K.
Our results show very sharp anomalies in the trans-
port coefficient derivatives near Tc, which indicates
a well defined critical point for this random alloy.
The Hall effect is particularly useful to investigate
the asymmetric mechanisms associated with the
scattering of electrons by magnetic ions. Such mecha- nisms lead to an extra contribution to pH [6], the so
called extraordinary Hall resistivity (pH) :
P’ being the normal resistivity due to the Lorentz
force on the electrons.
In rare earths, several mechanisms have been
proposed to explain the extraordinary Hall effect.
First, as it has been proposed by Kondo [7], it can arise
from asymmetric scattering by orbital terms of the exchange interactions between conduction and 4f electrons. These terms can be written as :
where Ai are appropriate interaction fields, gJ is the Lande factor for the ion i with total angular momen-
tum J ; ; s and I are the spin and angular momentum
of the conduction electron, the latter being referred
to an origin centred in the ion. The asymmetry of these terms (i.e. ,klH,,,Ik> klH I k >) gives
rise to angular deflections of the conduction electrons when the magnetic moments order below
Tc « Jz ) =F 0), and so to the so called skew scatter-
ing contributions to the Hall resistivity [7, 10, 11].
There is also a purely quantum mechanical effect : the electron wave packet effectively undergoes a small
transverse displacement 6r with respect to its initial
direction, the so called side jump effect (S. J.) [12,13,15].
The second term of (2) (i.e. H2) gives the main contri- bution to this side jump effect [14].
The second possible origin of the extraordinary
Hall effect is the spin-orbit coupling of the conduction electrons (mainly associated with the d character of the conduction band). Smit [8] has shown that this
spin-orbit coupling gives rise to « effective asymmetric scattering terms » for any scattering potential and
thus to asymmetric scattering. In rare earths; when
the main scattering potential is the exchange inter-
action with the rare earth ions ( N ( g J - 1) s.Ji),
the skew scattering and side jump contributions
arising from this mechanism have been calculated
by Asomoza [36] : the side jump contribution has been shown to be much larger.
Besides the sign and magnitude of pH, we gave
particular attention to the investigation of the critical behaviour of the Hall resistivity. This was achieved
with the measurement of the temperature derivative
dPH/dT in the vicinity of Tc, which requires very high
resolution in the PH(T) measurements.
To the best of our knowledge, the measurement of
dPH/dT brings a novel contribution to the available
experimental studies on the Hall effect (see also [17]).
To complement the analysis of pH above Tc, fairly
detailed data on the magnetic susceptibility (x)
was obtained for Tb75-Gd25.
In section 2 of this paper we describe briefly the experimental techniques and in section 3 we present the results for the electrical resistivity (p, dp/dT),
Hall effect (PH, dpH/dT) and magnetic susceptibility (x).
A thorough analysis of the data is presented in sec-
tion 4, including the separation of the different p- contributions (4.1), the critical behaviour of dp/d T
near Tc (4.2), the discussion of the Hall effect in the para (4.3) and ferromagnetic phases (4.4), and the
critical behaviour of pH near Tc (4. 5) ; finally, the
variation of the Curie temperature in Tbx-Gd1-x alloys is discussed in section 4.6, in terms of the theory of random rare earth alloys [2, 3].
2. Experimental techniques.
a) The sample used in the resistivity measurements was a parallelipiped with approximate dimensions
10 x 1 x 1 mm’, and the resistivity was measured
with a four-wire potentiometric method previously
described [ 18].
b) The high accuracy data on the Hall resistivity
were obtained with a lock-in technique, using ac
currents of about 0.5 A through the sample, and applied magnetic fields up to 7.96 x 105 A . m-1 (10 KOe). The sample was a slab cut from the same ingot as that used for the resistivity measurements, with dimensions 0.22 x 2.65 x 9.1 mm3. The magne- tic field was set perpendicular to the slab and its inversion was made at each experimental point
to extract the Hall voltage :
The Hall resistivity was then calculated by the usual
formula PH
=V Hall. (dj 1), where d is the sample
thickness and I is the electrical current. The tempera-
ture was measured with a copper constantan ther-
mocouple using a potentiometer with a sensitivity
of 0.01 pV. Further details can be found elsewhere [17].
The analysis of the Hall data was done using the
usual separation of pH into a normal and an extra-
ordinary contribution (see Eq. (1)). In the ferromagne-
tic phase, pH is expressed as :
where psH (7) is here the extraordinary Hall resistivity
of a monodomain sample, M,(T) the spontaneous magnetization of a monodomain at the temperature T, and M is the technical magnetization. With our sam- ple geometry the demagnetization factor D is nearly 1,
so that B ~ 110 Ha and (1) is written as :
In the paramagnetic phase and with our sample geometry, (1) can be expressed as :
in the limit of small magnetization, when pH can be
written as :
When M is expressed as a function of the suscepti- bility X
Equation (6) is written as :
This relation enables a direct comparison between
the behaviour of PH(T) and that of x(T). For such
purpose, the susceptibility was measured in a Tb75- Gd25 sample (9.535 mg weight) obtained from the
same initial ingot used for the Hall effect. The x- measurements were carried out at the Magnetism Group of CFU Porto, using a standard Faraday-
Curie method, with a highly sensitive Cahn balance to measure the small magnetic forces on the sample.
3. Experimental results.
3.1 ELECTRICAL RESISTIVITY (p, dp/dT).
-Figure 1
shows the temperature dependence of the electrical
resistivity of our polycrystalline Tb75-Gd25 sample,
with a typical kink at the onset of the paramagnetic
state (T,
=244.8 ± 0.1 K, see below). The residual
resistivity of our sample was po
=6.2 pocn% which corresponds to a relatively high resistivity ratio for
this alloy, p (300 K)/p (4.2 K) ~ 21. Besides po,
one can also estimate the phonon contribution
(a. T) and the spin-disorder electrical resistivity at
temperatures sufficiently above the Curie point (p’s ;
see section 4.1 for details). This separation is shown
in figure 1, our data giving ps
=87.2 pocm and
a. T
=36.2 pqcm at T
=350 K.
In order to investigate more closely the details in the p(T) curve we measured the temperature deriva- tive dp/dT over the same range (77-360 K; Fig. 2).
Some interesting features can be pointed out in the dp/dT curve of figure 2 : (i) an almost constant value
Fig. 1.
-Temperature dependence of the electrical resis-
tivity (p) of polycrystalline Tb7 s-Gd2s. Separation of the different p-contributions : aT (phonons), po (residual),
and p’ = p(T >> Tc) - aT - po.
Fig. 2.
-Temperature dependence of the temperature
derivative of the electrical resistivity (dp/dT) in polycrystal-
line Tb75-Gd25.
of dp/dT in the ferromagnetic phase over a wide
range of temperatures (T 180 K, p practically
linear in T) ; (ii) a complex structure in the curve
near the Curie point, below and above; (iii) a sharp singularity in dp/dT at Tc; (iv) a constant value of dpjdT at temperatures in the high temperature limit,
which can be ascribed to the phonon contribution to the electric resistivity in the paramagnetic phase (a. T). Our data gives
This value is of the same order of magnitude as the corresponding figures for single crystalline Tb (aa
=0.13 JlQ.cm.K-1, Ctc = 0.085 JlQ.cm.K-1) and
single crystalline Gd (O(a
=0.095 gfl.cm.K-’, occ =
0.08 J.lQ. cm. K -1) [20].
If we calculate « for polycrystals of Tb and Gd using
the equation :
and then perform an weighted average of such values to take into account the atomic concentration of Tb and Gd in the alloy, we get a
=0.108 JlQ. cm. K -1
for Tb7s-Gd2s, which is fairly close to the experimen-
tal figure referred above.
3.2 HALL RESISTIVITY (PH, dpH/dT).
-Figure 3 shows
the temperature dependence of the Hall resistivity
from 77 K up to 360 K, for two values of the applied magnetic field, Ha = 3.88 x 1 OS and 7.72 x 1 OS A . m-1;
similar measurements were performed with Ha
=0.80 x 105 and 1.59 x 105 A. m - 1.
The Hall resistivity vanishes at a temperature T*
=175 K in call cases, becoming positive below
this temperature, with a broad maximum around
135 K. The observation that PH(T*)
=0 irrespec-
tive of the Ha value can be explained as follows :
under our experimental conditions Ha is too small
to produce magnetic saturation at T* (M ~ Ha/D,
where D is the demagnetization factor) and then
we have from (5) :
The temperature T* just corresponds to the parti-
cular value at which go R0(T*) = - pH(T*)/MS(T*).
Equation (9) also shows that pH oc Ha at tempera-
tures below Tc when field penetration does not occur.
This is in agreement with our data for T % 225 K.
At temperatures close to the Curie point, where significant field penetration occurs, pH is no longer
linear in Ha, as shown in figure 4.
Figure 5 shows the derivative dPH/dT as a func-
tion of T, with dPH/dT obtained from local numerical differentiation of the PH(T) data (3 points). For
convenience the data have been normalized by the
factor PH(T,,.
The existence of critical features in the Hall effect is clearly evidenced by the very sharp dip in dpH/d T
at T
=244.5 + 0.5 K. This is consistent with the Curie temperature previously obtained on Tb7,- Gd25 single crystals, using magnetization data [21]
(Tc = 245 ± 2 K) and electrical resistivity measure-
ments [19] (see section 4.2).
We also observe that the minimum in (1/pH(Tc)) x (dpHjdT) at Tc gets less sharp as Ha increases due to the corresponding reduction in the spin fluctuations in the system.
An interesting feature is that dpH/dT vanishes at
T**
=135 K, irrespective of the value of Ha. Since
no field penetration occurs at this temperature, we
Fig. 3.
-Hall resistivity of Tb,,-Gd2,
as afunction of temperature, for two different values of the applied magnetic field Ha.
Fig. 4.
-Plot of PHI Ra
versusT, for different values of H..
The coincidence of the experimental
curvesoutside the Curie
point region indicates that PH
ocHa in this temperature range. However, considerable departures from this depen-
dence
occurnear T c.
obtain from (9) :
Therefore the temperature T** corresponds to the
condition :
3. 3 MAGNETIC SUSCEPTIBILITY (X).
-Figure 6 shows
the magnetic susceptibility of Tb75-Gd25, defined as
where Hi is the internal field, H; = Ha - D. M. Since
M and H; are expressed in A. m-1 this susceptibility
is a dimensionless quantity. The Curie temperature obtained from the zero-field resistivity measurements
(see 3.1) is marked by a vertical arrow in figure 6,
at the region where x(T) exhibits its steepest variation.
At temperatures sufficiently above T c the suscep-
tibility obeys the Curie-Weiss law :
with C
=7.17 K and 0
=251 K in our polycrystal-
line sample (see Fig. 7). In a previous study, Bagguley
et al. [21] obtained for a Tb75-Gd25 single crystal
and basal plane susceptibility measurements, C
=7.06 K and ob
=257 K. The slight discrepancy bet-
ween the two 0 values is attributable to the effect of the magnetic anisotropy, which makes Ðc ob in Tb75-Gd25 (easy axis in the basal plane), and thus Ð polycrystal Ob*
4. Discussion.
4.1 ELECTRICAL RESISTIVITY (p).
-In order to sepa- rate the different contributions to the electrical resis-
tivity, we start with the known expressions for p(T)
in binary rare earth alloys [22] :
Pelect is the resistivity due to the difference in elec- trostatic potential between the magnetic components,
Fig. 5.
-Temperature dependence of the normalized Hall resistivity temperature derivative, (’/PH(Tc)).(dPH/dT) for two
different values of the applied magnetic field
Fig. 6.
-Temperature dependence of the magnetic
sus-ceptibility (x)
nearand above the Curie point of polycrystal- line Tb7 s-Gd2s.
Fig. 7.
-Inverse susceptibility
versusT in Tb 75-Gd25*
For T sufficiently above Tc, x obeys
aCurie-Weiss law.
assumed to be temperature independent, pms is the saturated spin disorder resistivity of the alloy (in
terms of figure 1 we have, pms = Po +Ps - Pelect
-PiO Pi is the extra resistivity due to other (unavoidable) impurities present in the alloy, and pm(O) is the residual
magnetic resistivity due to the difference in the spins
of the magnetic components.
The sum Pelect + Pm(o) can be estimated from available data on the resistivity of dilute Gd-Tb
alloys [23] at helium temperatures, which show that :
where A
=9.7 pn. cm, B
=21.3 gf2. cm, and AS
is the difference between the spins of Tb and Gd.
This gives pelect = 1.8 gf2.cm, pm(O) = 1.0 gf2.cm.
Using our experimental value of p(0) for Tb75-Gd25
and equation (14) we obtain p;
=3.4 gf2.cm. Equa-
tion (15) now gives (with a
=0.105 JlQ. cm. K - 1 ;
T
=350 K) Pms
=88.2 gf2. cm.
Table I summarizes the electrical resistivity data
for Tb75-Gd25 (in gf2. cm; a in JlQ.cm.K-l) :
4.2 CRITICAL BEHAVIOUR OF dp jdT NEAR T,,.
-The dp jdT data at temperatures immediately above Tc
has been analysed in terms of the usual expression [25] :
with 8
=(T - Tc)jTc, pr
=p(Tc), A + and B, cons- tants ; q is the critical exponent characterizing the singularity in dpjdT [26]. A computer fit using and adjustable Tr value and assuming a 0 gave the best fit for Tc
=244.79 K, leading to a critical expo-- nent a = - 0.001 ± 0.002, with a mean relative
square deviation a
=7.753 x 10-2. If one starts with a > 0, the best fit corresponds to a
=+ 0.0007 + 0.002, giving a slightly higher mean relative square deviation -a
=7.755 x 10- 2 ; thus we take a
=-