Book STORAGE

STORAGE PRODUCTS

O\SiRISUTEO 13 y

CIMU:M.W!)

Hail-Marie Electronl"" C .... Orporaflon

2105 Lundy Avenue San Jose, CA 95131

408/432-4000 FAX 4081432-4044

1991 Data Book

Table of Contents

Advanced and Preliminary Information In this data book the following conven- tions are used in designating a data sheet

"Advanced" or "Preliminary."

Advance Information-

Indicates a product still in the design cycle, and any specifications are based on design goals only. Do not use for final design.

Preliminary Data-

Indicates a product not completely re- leased to production. The specifications are based on preliminary evaluations and are not guaranteed. Small quantities are available, and Silicon Systems should be consulted for current information.

Page # Customer Reply Card

Table of Contents ... 1 Product Index ... 11 Discontinued Parts List ... IV Numerical Index ... V Product Selector Guide ... VI Section 1. HOD READIWRITE AMPLIFIERS

32R104C, 104CL, 104CM, 104CLM, 32R1 08/1 08M, 32R122, 4-Channel ReadIWrite Device ...•

32R114, 4-Channel Thin Film ReadIWrite Device ...•

32R115, 2, 4, 5-Channel ReadIWrite Device ... . 32R117/117R, 32R117A1117AR, 2, 4, 6-Channel ReadIWrite Device ... 1-1 32R188, 4-Channel ReadIWrite Device ...•

32R501 1501 R, 4, 6, 8-Channel ReadIWrite Device ... 1-11 [j.{j@WII 32R502R, 6, 7, 8-Channel Center-tapped Thin Film ReadIWrite Device ... 1-23 32R51 OAl51 OAR/514/514R, 2, 4, 6-Channel ReadIWrite Device ... 1-27 32R511/511 R15111 15111 R, 4, 6, 8-Channel Ferrite ReadIWrite Device ... 1-39 32R512/512R, 8, 9-Channel Thin Film ReadIWrite Device ... 1-51 [j.{j@WII 32R5121 R, 14-Channel Thin Film ReadIWrite Device ... 1-61 32R515/515R, 9, 10-Channel Ferrite ReadIWrite Device ... 1-69 32R516/516R, 4, 6, 8-Channel Ferrite ReadIWrite Device ... 1-79 [j.{j@WII 32R5161 R, 10-Channel Ferritel MIG ReadIWrite Device ... 1-91 32R520/520R, 4-Channel Thin Film ReadIWrite Device ...•

32R521 1521 R15211 , 6-Channel Thin Film ReadIWrite Device ... 1-95 32R522/522R, 4, 6-Channel Thin Film ReadIWrite Device ... 1-103 32R524R, 8-Channel Thin Film ReadIWrite Device ... 1-111 32R525R, 4-Channel Thin Film ReadIWrite Device ... 1-119 32R526R, 4-Channel Thin Film ReadIWrite Device ... 1-127 32R527/527R, 8, 9-Channel Thin Film ReadIWrite Device ... 1-135 32R528/528R, 8, 9-Channel Thin Film ReadIWrite Device ... 1-145 32R529R, 8-Channel Thin Film ReadIWrite Device ... 1-153 32R1200/1200R, +5V, 4-Channel Ferrite/MIG, ReadIWrite Device ... 1-163 [j.{j@WII 32R2010R, 8, 10-Channel Thin Film ReadIWrite Device ... 1-173 [j.{j@WII 32R461 0/4611, 2, 4-Channel Thin Film ReadIWrite Device ... 1-177 Section 2. HOD PULSE DETECTION

32P540 Series, Read Data Processor ...•

32P541, Read Data Processor ... 2-1 32P541A, Read Data Processor ... , ... 2-11 32P541B, Read Data Processor ... , .... 2-23 32P544, Read Data Processor and Servo Demodulator ... 2-35 32P546, Read Data Processor with Pulse Slimming ...•

32P547, High Performance Pulse Detector ... 2-57 32P548, Pulse Detector and Data Synchronizer ... , ... 2-75 [j.{j@WII 32P549, Read Data Processor ... 2-101 [j.{j@WII 32P3000, Pulse Detector with Internal Filter ... 2-105 [j.{j@WII 32P4620/4621 , Pulse Detector and Data Separator Combination Device ... 2-109 Section 3. HDO ACTIVE FILTERS

[j.{j@WII 32F8011, Programmable Electronic Filter ... 3-1 [j.{j@WII 32F8020, Low-Power Programmable Electronic Filter ... 3-11

Product Index (Continued)

Section 4. HOD DATA RECOVERY

32D531, Data SeparatorlWrite Precompensation ...•

32D5321, Data Synchronizer/2, 7 RLL ENDEC ...•... .4-1 32D5322, Data Synchronizer, 2, 7 RLL ENDEC ... 4-19 32D534A, Data Synchronizer/MFM ENDEC ... 4-37 32D535, Data Synchronizer, 2, 7 RLL ENDEClWrite Precompensation ... .4-53 32D5351 Data Synchronizer, 2, 7 RLL ENDEClWrite Precompensation ... .4-73 32D5362A, Data Synchronizer,1, 7 RLL ENDEClWrite Precompensation ... .4-93 lfIl(tj)w 32D5371/5372, Data Synchronizer, 1,7 RLL ENDEC IWrite Precompensation ... .4-111 lfIl(tj)w 32D5381, Data Synchronizer, 2,7 RLL ENDEC ... 4-129 lfIl(tj)w 32D539, Data Synchronizer, 1,2, RLL ENDEC ... 4-147 32D4660, Time Base Generator ... 4-151 lfIl(tj)w 32D4661, Time Base Generator ... 4-159 lfIl(tj)w Data Synchronizer Family Applications Notes ... 4-167 Section 5. HOD HEAD POSITIONING

32H101A, Differential Amplifier ... 5-1 32H116A, Differential Amplifier ... 5-5 32H523R, Servo ReadlWrite, Thin Film ... 5-9 32H566R, Servo ReadlWrite, Ferrite ... 5-17 32H567, Servo Demodulator ...•

32H568, Servo Controller ...•

32H569, Servo Motor Driver ... 5-27 32H4630, Servo & Spindle Motor Controller ... 5-43 lfIl(tj)w 32H4631, Hybrid Servo & Spindle Motor Controller ... 5-45 lfIl(tj)w 32H6110, Differential Amplifier ... 5-51 32H6210, Servo Demodulator ... 5-55 32H6220, Servo Controller ... 5-61 32H6230, Servo Motor Driver ... 5-87 lfIl(tj)w 32H6240, Servo Motor Driver ... 5-103 Servo Applications Note ... 5-113 Section 6. HOD SPINDLE MOTOR CONTROL

32M590-Series, Two-Phase 5-1/4" Winchester Motor Speed Controller ... 6-1 32M591, Three-Phase 5-1/4" Winchester Motor Speed Controller ... 6-7 32M593A, Three-Phase Delta 5-1/4" Winchester Motor Speed Controller ... 6-15 32M594, Three-Phase Delta Motor Speed Controller ... 6-27 32M595, Hall Sensor-Less Motor Speed Controller ... 6-39 Section 7. HOD CONTROLLER/INTERFACE

328451, SCSI Controller ... 7-1 32B545, Winchester Disk Drive Support Logic ... . lfIl(tj)w 32C260, PCIXT Combo Controller ... 7-17 32C452, Storage Controller ... 7-23 32C453, Dual-Port Buffer Controller ... 7-55 lfIl(tj)w 32C4650, PC XT/AT Combo Controller ... 7-79

• Data Sheet available upon request. 111

Section 8. FLOPPY DISK DRIVE CIRCUITS

34D441, Data Synchronizer & Write Precompensator Device ... 8-1 34P570, 2-Channel Floppy Disk ReadlWrite Device ... 8-15 34R575, 2, 4-Channel Floppy Disk ReadlWrite Device ... 8-25 34B580, Port Expander Floppy Disk Drive ... 8-33 Section 9. TAPE DRIVE CIRCUITS

35P550, 4-Channel Magnetic Tape Read Device ... 9-1 Section 10. CUSTOM/SEMICUSTOM CAPABILITIES ... 10-1 Section 11. QUALITY ASSURANCE AND RELIABILITY ... 11-1 Section 12. PACKAGING/ORDERING INFORMATION

Packaging Index ... 12-0 Packaging Matrix ... 12-1 Package Types ... 12-2 Marketing Number Definition ... 12-6 Plastic DIP 8, 14, 16 and 18 Pins ... 12-7 Plastic DIP 20, 22, 24 and 24S Pins ... 12-8 Plastic DIP 28, 32 and 40 Pins ... 12-9 Cerdip 8,14,16 and 18 Pins ... 12-10 Cerdip 22,24 and 28 Pins ... 12-11 Surface Mounted Device (PLCC) 28, 32 and 44 Leads ... 12-12 Surface Mounted Device (PLCC) 52 and 68 Leads ... 12-13 Quad Fine Pitch 52, 1 00 ... 12-14 SON 8, 14 and 16 Leads ... 12-15 SOL 16, 18,20,24 and 28 Leads ... 12-16 SOL 34 and 36 Leads ... 12-17 SOW 32 Leads ... 12-17 SOM 36 Leads ... 12-17 SOM 44 Leads ... 12-18 Flat Package Dimensional Diagrams and Chart 10, 24, 28 and 32 Leads ... 12-1.8 Section 13. SALES OFFICES/DISTRIBUTORS ...•.•...•...•... 13-1

Discontinued Parts List

The following parts are no longer supplied or supported by Silicon Systems. Please note alternate sources.

Part # SSI32B450A SS132D452A SSI32D536 881 32D537 SSI32P542

Description 8CSI Controller Storage Controller

Data Separator/1, 7 RLL Encoding Data Synchronizer/1 ,7 RLL ENDEC Read Data Processor

Alternate Source 8S132B451 S8132D452 8S132D5362 S8132D5371/5372 None

Numerical Index

551 Device Numbers Page #

328451 ... 7-1 328545 ...•

32C260 ... 7-17 32C453 ... 7-55 32C4650 ... 7-79 320531 ...•

3205321 ... 4-1 3205322 ... 4-19 320534A ... 4-37 320535 ... 4-53 3205351 ... 4-73 3205362A ... 4-93 3205371/5372 ... 4-111 3205381 ... 4-129 320539 ... 4-147 3204660 ... 4-151 3204661 ... 4-159 32F8011 ... 3-1 32F8020 ... 3-11 32Hl01A ... 5-1 32Hl16A ... 5-5 32H523R ... 5-9 32H566R .. ... 5-17 32H567 ...•

32H568 ...•

32H569 ... 5-27 32H4630 ... 5-43 32H4631 ... 5-45 32H6110 ... 5-51 32H6210 ... 5-55 32H6220 ... 5-61 32H6230 ... 5-87 32H6240 ... '" ... 5-103 32M590, 5901, 5902 ... 6-1 32M591 ... 6-7 32M593A ... 6-15 32M594 ... 6-27 32M595 ... '" ... 6-39 32P540 ...•

32P541 ... 2-1

551 Device Numbers Page #

32P541 B ... ... 2-23 32P544 ... 2-35 32P546 ...•

32P547 ... 2-57 32P548 ... 2-75 32P549 ... 2-101 32P3000 ... 2-105 32P462014621 ... 2-109 32Rl04C, Cl, CM, ClM ...•

32Rl08, 108M ...•

32Rl14 ...•

32Rl15 ...•

32R117/117R, 32Rl17A1117AR ... 1-1 32Rl88 ... * 32R501/501R ... 1-11 32R502R ... 1-23 32R510Al510AR ... 1-27 32R511/511R15111/5111R ... 1-39 32R5121512R ... 1-51 32R5121 ... 1-61 32R514/514R ... * 32R515/515R ... 1-69 32R516/516R ... 1-79 32R5161R ... 1-91 32R520/520R ... * 32R521/521 Rl5211 ... 1-95 32R5221522R ... 1-103 32R524R ... 1-111 32R525R ... 1-119 32R526R ... 1-127 32R527R ... 1-135 32R528/528R ... 1-145 32R529R ... 1-153 32Rl200I1200R ... 1-163 32R2010R ... l-l73 32R461014611 ... 1-177 348580 ... 8-33 340441 ... 8-1 34P570 ... 8-15 34R575 ... 8-25 32P541A ... 2-11 35P550 ... 9-1

* Data Sheet available upon request V

Device

I ^{c· .}

^{F '}

I """

N b IrculI unction ,..,alures urn ers

HDD PUlse Detection

SSI32F8011 5S132F8020

Programmable Active Channel Filter Programmable Channel Filter

7-pole Bessel Active Filter, Programmable Cutoff Frequency, Programmable Pulse Slimming

7-pole Equiripple Active Filter, Programmable Cutoff Frequency, Programmable Pulse Slimming

Storage Ie Selector Guide

Device

I

^{C· . F}

I

^F

N b Ircult uncllon eatures

um ers

HDD Head Positioning

Preamplifier - Ferrite head Preamplifier - Thin Film head Servo Read/Write ServoRead/Write---···

Servo Demodulator

AV=93, BW=10 MHz, e"=7.0 nV/1Hz AV=250, BW=20 MHz, e"=0.94 nV /1Hz Sin Ie-Channel Thin-Film Read/Write Device Single-Channel Ferrite Read/Write Device SSI32H101A

SSI32H1l6 SSI32H523R SSi32H566- SSI32H567 SSI32H568 SSI3iH569 SSI32H4630 SSI32H6110

SSl32H621O

Servo Controller Servo Motor Dri-;;er---

Di·bit Quadrature Servo Pattern; PLL Synchronization

Jrack'§"'5.eeJ< Mode Oper.at~Micro.E!.,,~ssorlnterfOfe . _~_ _ _ _ _ Combo Servo & MSC

. Pr~Clll1Eli£i~r_= ThinJilm head~

Servo Demodulator

Head Parking, Spindle Motor Braking

Embedded & Hybrid Servo, Hall Sensor-less Motor Speed Control, +5V only />-'v.=..2/'j(j or 300, BW=20 MHz, e" =0.85 nV/1Hz _ _

Di-bit Quadrature Servo Pattern, PLL Synchronization AGC adjustment Track & Seek Mode Operation; Microprocessor Interface

Servo Controller SSI32H6220

SSI32H6230 SSI32H6240

Servo Motor Driver

Servo-Motor Dri~er~--·· .J:ljl(J.cl.!'arking; Spindle Motor Braki"l1. Voltage Clam~ _____ ~. _ _ _ _ _ _ Head Parking; Spindle Motor Braking, Voltage Clamp, Drives Bipolar Devices

HDD Spindle Motor Control

±0.035% Speed Accuracy; Unipolar Operation

±0.05% Speed Accuracy; Unipolar Operation SSI32M590

SSI32M591 SSI32M593 SSl32M594 SSI32M595

2-phase Motor Speed Control 3-phase Motor Speed Control 3-phase Motor Speed Control 3-phase Motor Speed Control 3-phase Sensor-less MSC

+0.037% Speed Accur"9'2Jlipolar Operation, 5 1/4" Drives

±0.037% Speed Accuracy; Bipolar Operation, 3 1/2",5 1 /4" Drives Hall Sensor-less; 5V only Motor Speed Control

HDD Controller/Interface

SSI32C260 Combo Controller 20 Mbit/s; AT/XT Combo Controller; Cirrus Logic SH-260 Compatible SSI 32B451 SCSI Controller Async Transfer to 1 .5 Mbyte/ s; Internal Drivers; AIC 500L Compatible

""",S~S'i-1 ~3"2C",4""5~2~+,;S:--to;;-ra~J~,,,,e~C~0","n""iitrol_le_r _ _ _ _ c-tQ}vlbit/ s; CIy\QS; Progr",!,mable;hl<: (j 10 C"'!'p,,tible____. _____ _ SSI 32C453 Buffer Controller Non-mux Addressing to 16K; CMOS; AIC 300 Compatible

SSI 32B545 Support Logic Includes ST506 Bus Drivers/Receivers

SSI32C4640 _~ombo SCSI Controller ~hJ'erformance DRAM Buffer Manager, 32 Mbit/s disk, 10 Mbyt,,/s SCSI .. __ ~_

·ssr3~ic4656- Combo AT Controller High Performance SRAM Buffer Manager, 32 Mbit/s disk, 10 Mbyte/s AT

Winchester Disk Drive Ie Product Family

SSI32M590 SSI32M591 SSI32M593A SSI32M594 SSI32M595'

SERVO PREAMP

551 32HIOI 551 32HI16A 551 32H523 551 32H566 551 32H611 0'

SSI32P540 SSI32P541 SSI32P541A r-1l!'I'!I!'/l'l'!l!'/l'l'!l!'/l'l'!l!'/lI'J!'l!"r-i SSI32P541B' I ~,,"""~"""~ill.,·1 SSI 32P542

SSI32P544 SSI32P546 FERRITE

SSI32RI04 SSI32RI15 SSI32RI17 SSI 32RI 17A SSI32RI88 SSI32R501 SSI32R510A SSI 32R51 1 SSI32R514 SSI32R515 SSI32RI200'

THIN· FILM SSI32RI14 SSI32R512 SSI32R5121' SSI32R520 SSI32R521 SSI32R5211 SSI32R522 SSI32R524 SSI32R525 SSI32R526 SSI32R527 SSI32R528 SSI32R529 SSI 32R20 10' SSI32R461O

~"""''''''''''''''''''''~ ~~: ~~~~66~

Combo· 5S1 32P54S' Combo· 551 32P4620'

\i~~~~\'\Ul

FILTER

551 32H567 551 32H568 I--~=-~, 55132H569 551 32H6210

fI'!'fI'Immrr ~~: ~~~~~;g

5S1 32H6240' 551 32H4631'

VII

• New or In Development

SSI32D5351 SSI32D5362 SSI32D5371 SSI32D5372 SSI32D5381 SSI32D4660 SSI32D4661 SSI32D539'

SSI328545 SSI32B451 SSI32C452 SSI32C453 551 32C260' 551 32C4640' 551 32C4650'

RiW

DESCRIPTION

The SSI 32R 117/117 A devices are bipolar monolithic integrated circuits designed for use with center-tapped ferrite recording heads. They provide a low noise read path, write current control, and data protection circuitry for as many as six channels. The SSI 32R117/117 A requires +5V and + 12V power supplies and is available in 2, 4 or 6 channel versions with a variety of packages.

The SSI32R117R/117AR differs from the SSI32R1171 117 A by having internal damping resistors.

BLOCK DIAGRAM

VDD1 vee GND WUS VDD2 veT

'T •..•.•.•.•••••• » CSLF'---'--~

RDX RDY

WDI

HSO

HS1 HS2

we

0790 - rev. 1-1

FEATURES

32R117A/117AR

2, 4, 6 Channel Read/Write Device

July, 1990

• +5V, + 12V power supplies

• Single or multi-platter Winchester drives

• Designed for center-tapped ferrite heads

• Programmable write current source

• Available in 2, 4 or 6 channels

• Easily multiplexed for larger systems

• Includes write unsafe detection

PIN DIAGRAM

HS1 HS2

HOX WDI

HOY VDD1

VDD2 VeT

H1X H1Y H5X

H1Y H5Y

H4X

H2X FWJ H4Y

H3X

H2Y NC H3Y

RDX WUS

H3X RDY vec

H3Y

H4X H4Y

H5X H5Y

CAUTION: Use handling procedures necessary for a static sensitive component.

32R117 A/117 AR 2, 4, 6-Channel Read/Write Device CIRCUIT OPERATION

The SSI32R117/117 A functions as a write driver or as a read amplifier for the selected head. Head selection and mode control are described in Tables 1 & 2. Both R/W and CS have internal pull-up resistors to prevent an accidental write condition.

WRITE MODE

The Write mode configures the SSI32R117/117 A as a current switch and activates the Write Unsafe Detec- tor. Head current is toggled between the X- and V-side of the recording head on the falling edges of WDI, Write Data Input. Note that a preceding read operation initializes the Write Data Flip-Flop, WDFF, to pass current through the X-side of the head. The magnitude of the write current, given by

Iw

=

K/Rwc, where K

=

Write Current Constant is set by the external resistor, Rwc, connected from pin WCto GND.

Any of the following conditions will be indicated as a high level on the Write Unsafe, WUS, open collector output.

Head open

Head center tap open WDI frequency too low Device in Read mode Device not selected No write current

After the fault condition is removed, two negative transitions on WDI are required to clear WUS.

Power dissipation in write mode may be reduced by plaCing a resistor (RCT) between VDD1 & VDD2. The optimum resistor value is 130Q x 50/lw (Iw in mA). At low write currents «15 mAl read mode dissipation is higher than write mode and RCT, though recom- mended, may not be considered necessary. In this case VDD2 is connected directly to VDD1.

READ MODE

In the Read mode the SSI 32 R117 1117 A is configured as a low noise differential amplifier, the write current source and the write unsafe detector are deactivated, and the write data flip-flop is set. The RDX and RDV outputs are driven by emitterfollowers and are in phase with the "X" and "V" head ports. They should be AC coupled to the load.

Note that the internal write current source is deacti- vated for both the Read and the Chip Deselect mode.

This eliminates the need for external gating of the write current source.

IDLE MODE

Taking CS high selects the idle mode which switches the RDX, RDV outputs into a high impedance state and deactivates the internal write current source. This facilitates multi-device installations by allowing the read outputs to be wire OR'ed.

TABLE 1: Mode Select

CS R/W MODE

0 0 Write

0 1 Read

1 x Idle

TABLE 2: Head Select

HS2 HS1 HSO HEAD

0 0 0 0

0 0 1 1

0 1 0 2

0 1 1 3

1 0 0 4

1 0 1 5

1 1 x None

o

⁼ Low level 1 = High level x = Don't care

0790 -rev.

32R117A/117AR

2, 4, 6-Channel Read/Write Device

PIN DESCRIPTIONS

NAME I/O DESCRIPTION

HSO-HS2 I Head Select: selects up to six heads CS I Chip Select: a low level enables device R/W I Read/Write: a high level selects read mode

WUS O' Write Unsafe: a high level indicates an unsafe writing condition (open collector) WDI I Write Data In: negative transition toggles the direction of the head current HOX-H5X I/O X,Y head connections

HOY-H5Y

RDX,RDY O' X, Y Read Data: differential read signal out

WC - Write Current: used to set the magnitude of the write current VCT - Voltage Center Tap: voltage source for head center tap

VCC

-

^+5V

VDD1 - +12V

VDD2

-

Positive power supply for the center tap voltage source

~-

GND - Ground

'When more than one R/W device is used, these signals can be wire OR'ed_

ABSOLUTE MAXIMUM RATINGS (Operation above absolute maximum ratings may permanently damage the device. All voltages referenced to GND.)

PARAMETER VALUE UNITS

VDD1 DC Supply Voltage -0.3 to +14 VDC

VDD2 DC Supply Voltage -0.3 to +14 VDC

VCC DC Supply Voltage -0.3 to +6 VDC

VIN Digital Input Voltage Range -0.3 to VCC + 0.3 VDC

VH Head Port Voltage Range -0.3 to VDD + 0.3 VDC

Vwus WUS Port Voltage Range -0.3 to +14 VDC

Iw Write Current 60 mA

10 RDX, RDY Output Current -10 mA

IVCT VCT Output Current -60 mA

Iwus WUS Output Current +12 mA

Tstg Storage Temperature Range -65 to +150 °c

Lead Temperature, PDIP, Flatpack (10 sec soldering) 260 °C

Package Temperature, PLCC, SOL (20 sec reflow) 215 °C

1-3

32R117A/117AR 2, 4, 6-Channel Read/Write Device

RECOMMENDED OPERATION CONDITIONS

PARAMETER CONDITIONS

DC Supply VoHage VDD1

DC Supply Voltage VCC

Head Inductance Lh

Damping Resistor RD 32R117 only

RCT Resistor RCT

Write Current Iw

Junction Temperature Range Tj

DC CHARACTERISTICS

MIN 10.8 4.5

5 500 125.0

25 25

(Unless otherwise specified, recommended operating conditions apply.)

PARAMETER CONDITIONS MIN

VCC Supply Current Read/Idle Mode

Write Mode

VDD Supply Current Idle Mode

Read Mode Write Mode Power Dissipation (Tj = + 125°C) Idle Mode

Read Mode

Write Mode, Iw = 50 mA, RCT = 130n

Write Mode, Iw = 50 mA, RCT= on

Digital Inputs

Input Low Voltage VIL -0.3

Input High Voltage VIH 2.0

Input Low Current ilL VIL = 0.8V -0.4

Input High Current IIH VIH = 2.0V

WUS Output VOL IOL =8 mA

WUS Output IOH VOH = 5.0V

Center Tap Voltage VCT Write Mode Read Mode

NOM MAX UNITS

12.0 13.2 VDC

5.0 5.5 VDC

15 IlH

2000 n

130 135.0 n

50 mA

125 °C

NOM MAX UNITS

25 mA

30 mA

25 mA

50 mA

30+lw mA

400 mW

600 mW

700 mW

1050 mW

0.8 VDC

VCC+0.3 VDC mA 100 j.LA

0.5 VDC

100 j.LA

6.0 VDC

4.0 VDC

0790 -rev.

32R117A1117AR 2, 4, 6-Channel Read/Write Device

WRITE CHARACTERISTICS (Unless otherwise specified: recommended operating conditions apply, IW =45 rnA, Lh = 10~, Rd = 7500 (32R117/Aonly), f(Data) = 5 MHz, CL(RDX, RDY):s; 20 pF)

PARAMETER CONDITIONS MIN NOM MAX UNITS

Write Current Range 10 50 rnA

Write Current Constant "K" 133 147 V

Differential Head Voltage Swing 8.0 V(pk)

Unselected Head Transient Current 2 mA(pk)

Differential Output Capacitance 15 pF

Differential Output Resistance 32R117/A 10K

a

32R117R 562 938

a

32R117/AR 638 863

a

WDI Transition Frequency WUS=low 250 KHz

Iwc to Head Current Gain Iwllwc 20 rnA/rnA

Unselected Head Leakage Current Sum of X & Y side 85 _~

leakage current

READ CHARACTERISTICS

(Unless otherwise specified: recommended operating conditions apply, IW = 45 rnA, Lh = 10~, Rd = 7500 (32R117/117A only), f(Data) = 5 MHz, CL(RDX, RDY) :s; 20 pF, Vin is referenced to VCT)

PARAMETER CONDITIONS MIN NOM MAX UNITS

Differential Voltage Gain Vin = 1 mVpp @ 300 KHz RL(RDX), RL(RDY) = 1 KO

32R117/117R 80 120 VN

32R117/117AR 90 110 VN

Dynamic Range DC Input Voltage, Vi, -3 +3 mV

Where Gain Falls by 10%, Vin = Vi + 0.5 mVpp

@300KHz

Bandwidth (-3dB) IZsl < 50, Vin = 1 mVpp 30 MHz

Input Noise Voltage BW= 15 MHz, 32R117/R 2.1

nV/¥Z

Lh

=

0, Rh = 0

32R117A1AR 1.7

nV/¥Z

Differential Input Capacitance f = 5 MHz 20 pF

Differential Input Resistance 32R117/117A, f = 5 MHz 2K

a

32R117R, f = 5 MHz 390 810

a

32R117/117AR 450 750

a

1-5

32R117A/117AR

2, 4, 6-Channel Read/Write Device

READ CHARACTERISTICS (Continued) PARAMETER

Input Bias Current (per side) Common Mode Rejection Ratio

Power Supply Rejection Ratio Channel Separation

Output Offset Voltage

Common Mode Output Voltage

Single Ended Output Resistance Leakage Current, RDX, ROY

Output Current

CONDITIONS

Vcm = VCT + 100 mVpp

@5MHz

100 mVpp@ 5 MHz on VDD1, VDD2 or VCC Unselected Channels:

Vin=100 mVpp@ 5 MHz;

Selected Channel:

Yin = 0 mVpp 32R117/117R 32R117/117AR Read Mode Write/Idle Mode f = 5 MHz RDX, ROY = 6V Write/Idle Mode AC Coupled Load, RDX to ROY

MIN NOM MAX UNITS

45

IJA

50 dB

45 dB

45 dB

-480 +480 mV

-440 +440 mV

5 7 V

4.3 V

30 Q

-100 +100

IJA

2 mA

SWITCHING CHARACTERISTICS (Unless otherwise specified: recommended operating conditions apply, IW = 45 mA, Lh = 10 IlH, Rd = 750Q (32R117/A) only, f(Data) = 5 MHz)

PARAMETER CONDITIONS MIN NOM MAX UNITS

R/W To Write Delay to 90% of 1.0 IlS

write cu rrent

R/Wto Read Delay to 90% of 100 mV 1.0 IlS

10 MHz read signal envelope or to 90 % decay of write current

CS to Select Delay to 90% of write 1.0 IlS

current or to 90% of 100mV 10MHz read signal envelope

CS to Unselect Delay to 90% decay 1.0 IlS

of write current

0790-rev.

SWITCHING CHARACTERISTICS (Continued) PARAMETER

HSO - HS2 to any head

WUS - Safe to Unsafe - TD1 WUS - Unsafe to Safe - TD2 Head Current (Lh = 0 ~. Rh = On)

Prop. Delay - TD3 Asymmetry Rise/Fall Time

HEAD CURRENT

( Ix-Iy)

CONDITIONS

Delay to 90% of 100 mV 10 MHz read signal envelope

1w=50mA 1w=20mA

From 50% points WDI has 50% duty cycle and 1 ns riselfall time 10% - 90% points

MIN

1.6

32R117A/117AR 2, 4, 6-Channel Read/Write Device

NOM MAX UNITS

1.0 IJ.S

8.0 IJ.S

1.0 IJ.S

25 ns

2 ns

20 ns

TD1 - - - .

FIGURE 1: Write Mode Timing Diagram

1-7

32R117A/117AR 2, 4, 6-Channel ReadlWrite Device

DRIVE INTERFACE

I

SELECT

I

SS132P540

READ DATA PROCESSOR

SSI326545 LOGIC SUPPORT

+5V

see Note 5

WUS

RlW

CS

HSO

HEAD

{:-+-+---i

HS1

I~-+----~ ">r---4---~ ^HS2 WRITE

DATA

READ DATA

NOTES

1. An external resistor, RCT, given by,

117/117R RCT = 130(55/Iw)Q, where Iw is in mA, 117/117 AR = 130(50/Iw)Q

WDI

RDX

ROY

RWC see Note 6

+12V

SS132R117 SSI32R117A

WC GND

-

can be used to limit internal power dissipation. Otherwise connect VDD2 to VDD1.

see Note 2

see Note 4 HOX

HOY H1X

H1Y H2X

H2Y H3X

H3Y H4X

H4Y H5X

H5Y

2. A ferrite bead (Ferroxcube 5659065/4A6) can be used to suppress write current overshoot and ringing induced by flex cable parasitics.

3. Limit DC current from RDX and RDY to 100 ~ and load capacitance to 20 pF.

4. Damping resistors not required on 32R117R/117AR version.

5. The power bypassing capacitor must be located close to the 32R117/117 A with its ground returned directly to device ground with as short a path as possible.

6. To reduce ringing due to stray capacitance this resistor should be located close to the 32R117/117A.

Where this is not desirable a series resistor can be used to buffer a long WC line.

FIGURE 2: Applications Information

CS GND NC HOX HOY

RDY

0790 -rev.

PACKAGE PIN DESIGNATIONS

(TOP VIEW)

18-lead PDIP HSO WDI VDDl

VDD2 VCT H1X H1Y WUS VCC

we RDX

22-lead PDIP 4 3 2 1 28 27 26

HOY 5 25 VOO1

H1X 6 24 VOO2

H1Y 7 32Rl17-6

32Rl17A-6 23 veT H2X 8 32Rl17R-6 22 H5X H2Y 9 32Rl17AR-6

21 H5Y

AM 10 20 H4X

we 11 19 H4Y

12 13 14 15 16 17 18

0 x >- ⁰ en >- x

Z 0 a: a: 0 0 > ::::l

'" '"

==

J: J:

28-lead PLCC

~ HSO

GND HS1

HOX WDI

HOY 4 21 VDD1

H1X 20 VDD2

H1Y 32R117-4 VCT

32R117A-4

H2X 32R117R-4 H3X

32R117AR-4

H2Y H3Y

RIW NC

WC 10 11 NC

RDX WUS

RDY vee

24-lead Flatpack, SOL

1-9

HSO HSl WDI VDDl VDD2 VeT H3X H3Y WUS vee ROY

32R117A/117AR 2, 4, 6-Channel ReadlWrite Device

HSl

CS HS2

GND WDI

HOX VDDl

HOY VDD2

veT

H1Y H5X

H5Y H4X

RiW H4Y

we H3X

NC H3Y

RDX WUS

RDY vce

28-lead PDlP, Flatpack, SOL

THERMAL CHARACTERISTICS PACKAGE

"ja

1S-lead PDIP 140°C/W 22-lead PDIP 65°C/W 24-lead Flatpack 110°C/W

SOL SO°C/W 2S-lead PDIP 55°C/W Flatpack 100°C/W PLCC 65°C/W SOL 70°C/W

32R117AJ117AR 2, 4, 6-Channel Read/Write Device

ORDERING INFORMATION

PART DESCRIPTION

SSl32R117 2-Channel PDIP 4-Channel PDIP 4-Channel SOL 4-Channel Flatpack 6-Channel PDIP 6-Channel SOL 6-Channel Flatpack 6-Channel PLCC

SSI32R117R wHh Internal Damping Resistor 2-Channel PDlP

4-Channel PDIP 4-Channel SOL 4-Channel Flatpack 6-Channel PDIP 6-Channel SOL 6-Channel Flatpack 6-Channel PLCC SSI32R117A

2-Channel PDIP 4-Channel PDIP 4-Channel SOL 4-Channel Flatpack 6-Channel PDIP 6-Channel SOL 6-Channel Fiatpack 6-Channel PLCC

SSI32R117AR wlt.h Internal Damping Resistor 2-Channel PDIP

4-Channel PDIP 4-Channel SOL 4-Channel Flatpack 6-Channel PDIP 6-Channel SOL 6-Channel Flatpack S-Channel PLCC

ORDER NO. PKG.MARK

SSI32R117-2P 32R117-2P

SSI32R117-4CP 32R117-4CP

SS132R117-4CL 32R117-4CL

SS132R117-4F 32R117-4F

SSI32R117-SCP 32R117-SCP

SS132R117-6CL 32RI17-6CL

SS132R117-6F 32R117-6F

SS132R117-6CH 32R117-6CH

SSI 32R117R-2P 32R117R-2P

SSI32RI17R-4CP 32R117R-4CP

SS132R117R-4CL 32R117R-4CL

SS132R117R-4F 32RI17R-4F

SSI 32R117R-6CP 32R117R-6CP

SSI 32R117R-6CL 32R117R-6CL

SSI 32R117R-6F 32R117R-6F

SS132R117R-6CH 32R117R-6CH

SSI32RI17A-2P 32R117A-2P

SS132R117A-4CP 32R117 A-4CP

SS132R117A-4CL 32R117A-4CL

SS132R117A-4F 32R117A-4F

SS132R117A-6CP 32R117 A-6CP

SSI32RI17A-6CL 32R117A-6CL

SS132R117A-6F 32R117A-6F

SSI 32R117 A-6CH 32R117A-6CH

SSI32RI17AR-2P 32R117 AR-2P

SSI32RI17AR-4CP 32RI17AR-4CP

SSI32RI17AR-4CL 32R117AR-4CL

SSI32RI17AR-4F 32R117AR-4F

SSI32RI17AR-6CP 32R117AR-6CP

SSI32R117AR-6CL 32RI17AR-6CL

SSI32RI17AR-6F 32R117 AR-SF

SSI32R117AR-6CH 32R117 AR-6CH

No responsibility is assumed by Silicon Systems for use of this product nor for any infringements of patents and trademarks or other rights of third parties resulting from its use. No license is granted under any patents, patent rights or trademarks of Silicon Systems. Silicon Systems reserves the right to make changes in specifications at any time without notice. Accordingly, the reader is cautioned to verify that the data sheet is current before placing orders.

0790 -rev.

DESCRIPTION

The 551 32R501 is a bipolar monolithic integrated circuit designed for use with a center-tapped ferrite recording head. It provides a low noise read path, write current control, and data protection circuitry for as many as 8 channels. The 551 32R501 requires +5V and + 12V power supplies and is available in a variety of packages.

The 581 32R501 R performs the same function as the 881 32R501 with the addition of internal damping resistors.

SSI 32R501 1501 R

4, 6, 8-Channel Ferrite Read/Write Device

July, 1990

FEATURES

• Single or multi-platter Winchester drives

• Designed for center-tapped ferrite heads

• Programmable write current source

• Easily multiplexed for larger systems

• Includes write unsafe detection

• TTL compatible control signals

• 1.5

nV/.JHz

maximum Input noise voltage

• +5V, +12V power supplies

• Mirror Image package option

BLOCK DIAGRAM PIN DIAGRAM

VOD1 vee GND WUS

ROX [F~~~~~-+-~7' ROY D+c++c++c++c++++F::""

VD02 veT

1-11

HOX HOY H1X

H1Y ROY

H2X ROX

H2Y H3Y HSO

H3X HS1

H3Y HS2

H4X

H4Y WOI

H5X H5Y HeX HeY

H7X 32-LEAD SOW

H7Y

CAUTION: Use handling procedures necessary for a static sensitive component.

4,6, 8-Channel Ferrite Read/WriteDevice

CIRCUIT OPERATION

The SSI32R501 gives the user the ability to address up to eight center-tapped ferrite heads and provide write drive or read amplification. Head selection and mode contro.1 is accomplished using the HSn, CS and R/W inputs as shown in Tables 1 & 2. Internal pullups are provided for the CS & R/W inputs to force the device into a non-writing condition if either control line is opened accidentally.

TABLE 1: Mode Select

cs

^{R/W MODE}

0 0 Write

0 1 Read

1 X Idle

TABLE 2: Head S4illect

HS2 HS1 HSO HEAD

0 0 0 0

0 0 1 1

0 1 0 2

0 1 1 3

1 0 0 4

1 0 1 5

1 1 0 6

1 1 1 7

o

⁼ Low level 1 = High level WRITE MODE

Taking both CS and RIW low selects write mode which configures the SSI 32R501 as a current switch and activates the Write Unsafe (WUS) detector circuitry.

Write current is toggled between the X and Y side of the selected head on each high to low transition of the Write Data Input (WDI). Note that a preceding read mode selection initializes the Write Data Flip-Flop, WDFF, to pass write current through the "X" side of the head. The zero-peak write current magnitude is pro- grammed by an external resistor Rwc from pin WC to GND and is given by:

Iw = KlRwc, where K = Write Current Constant

The Write Unsafe detection circuitry monitors voHage transitions at the selected head connections and flags any of the following conditions as a high level on the Write Unsafe open collector output:

• Head open • Head center tap open

• WDI frequency too low • Device in read mode

• Device not selected • No write current Two negative transitions on WDI, after the fault is corrected, will clear the WUS flag.

Power dissipation in write mode may be reduced by placing a resistor (RCT) between VDD1 & VDD2. The optimum resistor value is 1200 x 50/lw (Iw in mA). At low write currents (<15 mA) read mode dissipation is higher than write mode and RCT, though recom- mended, may not be considered necessary. In this case VDD2 is connected directly to VDD1.

READ MODE

Taking

CS

low and R/W high selects read mode which configures the SSI 32R501 as a low noise differential amplifier for the selected head. The RDX and ROY outputs are driven by emitterfollowers and are in phase with the "X" and "Y" head ports. These outputs should be AC coupled to the load. The internal write current source is gated off in read mode eliminating the need for any external gating.

Read mode selection also initializes the Write Data Flip-Flop (WDFF) to pass write cu rrent through the "X"

side of the head at a subsequent write mode selection.

IDLE MODE

Taking CS high selects the idle mode which switches the RDX, ROY outputs into a high impedance state and deactivates the internal write current source. This facilitates mUlti-device installations by allowing the read outputs to be wire OR'ed.

0790 - rev.

PIN DESCRIPTIONS

NAME 1/0

HSO-HS2 I

CS I

RIW I

WUS O'

WDI I

HOX-H7X 110

HOY-H7Y

RDX,RDY O'

WC VCT VCC VDD1 VDD2 GND

DESCRIPTION Head Select

4, 6, 8-Channel Ferrite Read/Write Device

Chip Select: a low level enables device ReadlWrite: a high level selects read mode

Write Unsafe: a high level indicates an unsafe writing condition Write Data In: negative transition toggles direction of head current X,Y head connections

X, Y Read Data: differential read signal out

Write Current: used to set the magnitude of the write current Voltage Center Tap: voltage source for head center tap +5V

+12V

Positive power supply for the center tap voltage source Ground

• When more than one R/W device is used these signals can be wire OR'ed.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS (All voijages referenced to GND. Currents into device are positive.)

PARAMETER VALUE UNITS

DC Supply Voltage VDD1 -0.3 to +14 VDC

DC Supply Voijage VDD2 -0.3 to +14 VDC

DC Supply Voijage VCC -0.3 to +6 VDC

Digital Input Voijage Range VIN -0.3 to vce + 0.3 VDC

Head Port Voltage Range VH -0.3 to VDD1 + 0.3 VDC

WUS Pin Voltage Range Vwus -0.3 to +14 VDC

Write Current Zero Peak Iw 60 mA

Output Current RDX, RDY 10 -10 mA

Output Current IVCT -60 mA

Output Current Iwus +12 mA

Storage Temperature Range Tstg -65 to 150 °c

Lead Temp. PDIP, Flatpack (10 sec Soldering) 260 °C

Package Temperature PLCC, SO (20 sec Reflow) 215 °C

1-13

4,6, 8-Channel Ferrite Read/Write Device

RECOMMENDED OPERATION CONDITIONS

PARAMETER CONDITIONS

DC Supply VoHage VDD1

DC Supply Voltage VCC

Head Inductance Lh

Damping Resistor RD 32R5010nly

RCT Resistor RCT- Iw=50mA

Write Current Iw

Junction Temperature Range Tj

MIN NOM MAX

10.8 12.0 13.2

4.5 5.0 5.5

5 15

500 2000

114 120 126

22 50

+25 +135

-For Iw = 50 rnA. At other Iw levels refer to Applications Information that follows this specification.

DC CHARACTERISTICS

Unless otherwise specified, recommended operating conditions apply.

POWER SUPPLY

PARAMETER CONDITIONS MIN NOM MAX

VCC Supply Current Read/Idle Mode 25

Write Mode 30

VDD Supply Current Idle Mode 25

(sum of VDD1 and VDD2) Read Mode 50

Write Mode 30+lw

Power Dissipation (Tj = + 135°C) Idle Mode 400

Read Mode 600

Write Mode, Iw = 50 rnA, 1050

RCT= on

Write Mode, Iw = 50 rnA 750

RCT= 120n

UNITS VDC VDC IlH

n n rnA

°C

UNITS rnA rnA rnA rnA rnA mW mW mW mW

DC CHARACTERISTICS (Continued) DIGITAL 1/0

PARAMETER CONDITIONS

VIL Input Low Voltage VIH Input High Voltage

ilL Input Low Current VIL = 0.8V IIH Input High Current VIH = 2.0V VOL WUS Output Low Voltage IOL= 8 rnA IOH WUS Output High Current VOH = 5.0V WRITE MODE

PARAMETER CONDITIONS

Center Tap Voltage VCT Write Mode Write Current Range

Write Current Constant "K"

Iwe to Head Current Gain Unselected Head Leakage Current

RDX, RDY Common Mode Writelldle Mode Output Voltage

RDX, RDY Leakage 3.0 < RDX, RDY < B.OV Writelldle Mode READ MODE

PARAMETER CONDITIONS

Center Tap Voltage Read Mode

Input Bias Current (differential)

Output Offset Voltage Read Mode

Common Mode Output Voltage Read Mode

0790 -rev. 1-15

4, 6, 8-Channel Ferrite Read/Write Device

MIN NOM MAX UNITS

-0.3 0.8 VDC

2.0 VCC VDC

+ 0.3

-0.4 rnA

85 ~

0.5 VDC

100 ~

MIN NOM MAX UNITS

6.0 VDC

10 50 rnA

129 151

20 rnA/rnA

85 ~

4.3 VDC

-50 +50 ~

MIN NOM MAX UNITS

4.0 VDC

100 ~

-480 +480 mV

5 7 VDC

4, 6, 8-Channel Ferrite Read/Write Device

DYNAMIC CHARACTERISTICS AND TIMING

Unless otherwise specified, recommended operating conditions apply and Iw = 45 mA, Lh = 10 JlH, Rd = 7500 32R501 only, f(WDI) = 5 MHz, CL(RDX, ROY) :s; 20 pF.)

WRITE MODE

PARAMETER CONDITIONS MIN NOM MAX UNITS

Differential Head Voltage Swing 7.5 V(pk)

Unselected Head Transient Current 5 JlH :s; Lh :s; 9.5 JlH 2 mA(pk)

Differential Output Capacitance 15 pF

Differential Output Resistance 32R501 10K 0

32R501R 600 960 0

WDI Transition Frequency WUS= low 250 KHz

READ MODE

PARAMETER CONDITIONS MIN NOM MAX UNITS

Differential Voltage Gain Vin = 1 mVpp @ 300 kHz, 80 120 V/V

RL(RDX), RL(RDY)

= 1 kO

Dynamic Range DC Input Voltage, Vi, -3 +3 mV

Where Gain Falls by 10%. Vin = Vi + 0.5 mVpp @ 300 KHz

Bandwidth (-3d B) /2s/ < 50, Vin = 1 mVpp 30 MHz

Input Noise Voltage BW= 15 MHz, 1.5 nVN'Hz

Lh = 0, Rh = 0

Differential Input Capacitance f = 5 MHz 23 j)F

Differential Input Resistance 32R501, f = 5 MHz 2K 0

Differential Input Resistance 32R501 R, f = 5 MHz 460 860 0

Common Mode Rejection Ratio Vcm = VCT + 100 mVpp 50 dB

@5MHz

Power Supply Rejection Ratio 100 mVpp@ 5 MHz on 45 dB

VDD1, VDD2 or VCC

Channel Separation Unselected Channels: 45 dB

Vin=100 mVpp@ 5 MHz;

Selected Channel:

Vin = 0 mVpp

Single Ended Output Resistance f = 5 MHz 30 0

READ MODE (Continued)

PARAMETER CONDITIONS

Output Current AC Coupled Load,

RDXto ROY External Resistance Load AC coupled to output

per side to GND Center tap output impedance

o

:5f:5 5 MHz SWITCHING CHARACTERISTICS

PARAMETER CONDITIONS

R/WTo Write Delay to 90% of

Write Current

R/Wto Read Delay to 90% of

100 mV, 10 MHz Read Signal Envelope or to 90% decay of Write Current

CS to Select Delay to 90% of Write

Current or to 90% of 100 mV, 10 MHz Read Signal Envelope

CS to Unselect Delay to 90% Decay

of Write Current HSO - HS2 to any head Delay to 90% of 100 mV,

10 MHz Read Signal Envelope

WUS-Safe to Unsafe - TD1 Iw

=

50 mA WUS-Unsafe to Safe - TD2 Iw

=

20 mA Head Current (Lh

=

0

J.I.H,

Rh

=

00)

Prop. Delay - TD3 From 50% Points

Asymmetry WDI has 50% Duty Cycle

and 1 ns Rise/Fall Time

Rise/Fall Time 10% - 90% Points

0790-rev. 1-17

4, 6, a-Channel Ferrite Read/Write Device

MIN NOM MAX UNITS

2.0 mA

100 0

150 0

MIN NOM MAX UNITS

600 ns

600 ns

600 ns

600 ns

600 ns

1.6 8.0 J.IS

1.0 J.IS

30 ns

2 ns

20 ns

4, 6, 8-Channel Ferrite Read/Write Device

WDI

-4-TD1

--+

1 , - - - - - WUS

_ TD3

HEAD CURRENT

( Ix - Iy)

FIGURE 1: Write Mode Timing Diagram

+5V see Note 4

READ DATA

---.~

^HSn

NOTES

1. An external resistor, RCT. given by; RCT", 120 (50/1w) where Iw is the zero-peak write current in mAo can be used to limit internal power dissipation. Otherwise connect VDD2 to VODt.

2. Damping resistors not required on 32R501 R versions.

3. limit DC current from ROX and ROY to loo}1A and load capacitance to 20 pF. In multi-chip application these outputs can be wire-OR'ed,

4. The power bypassing capacitor must be located close to the 32R501 with its ground returned directly to device ground, wHh as short a path as possible.

5. To reduce ringing due to stray capacitance this resistor should be located close lathe 32R501. Where this is not desirable a series resistQ( can be used to buffer a long we line.

FIGURE 2: Applications Information

RWC see Note 5

+12V

see Note 2

PACKAGE PIN DESIGNATIONS

(TOP VIEW)

GNO 24 N/c'

N/C 2 23 CS"

HOX 3 22 RNI

HOY 4 21 WC

H1X 5 20 ROY

H1Y 6 32R501R-4 32R501-41 19 ROX

H2X 7 4

Channels 18 HSO

H2Y 8 17 HS1

H3X 9 16

vee

H3Y 10 15 WOI

VCT 11 14 WUS

VOD2 12 13 VOO1

, Must remain open 24-Lead SOL

HOX 28 GNO

HOY 2 27 N/C'

H1X 3 26 CS"

H1Y 4 25 RNI

H2X 5 24

we

H2Y 6 23 ROY

H3X 7 32R501-61 ₂₂ ROX 32R501R-6

H3Y 8 6 21 HSO

Channels

H4X 9 20 HS1

H4Y 10 19 HS2

H5X 11 18

vee

H5Y 12 17 WOI

VCT 13 16 WUS

VOD2 14 15 VOO1

'Must remain open

28-Lead PDIP, SOL, Flatpack

0790 - rev. 1-19

4, 6, a-Channel Ferrite Read/Write Device

HOX GNO

HOY N/C·

H1X l:S'

H1Y PiiI

H2X we

H2Y ROY

H3X ROX

H3Y HSO

H4X HS1

H4Y HS2

HSX vee

HSY WOI

H6X wus

HGY VOO1

H7X VOO2

H7Y VCT

·Must remain open

32-Lead Flatpack, SOW

GNO NIC NIC NIC

"CS R!II we

ROY

H3X ROX

H3Y HSO

HS1

H4Y HS2

HSX vee

HSY WOI

H6X wus

H6Y NIC

NIC NIC

NIC VD01

H7X VDD2

H7Y VCT

-Mist remain open

4O-Lead PDIP

==-==-=~...,..,..-:---:-::-::-::-::-.----.~---~--~-~-~----'~~~---'---.---'-'-=-~'---::-:;:;:----_._--

4, 6, 8-Channel Ferrite Read/Write Device

PACKAGE PIN DESIGNATIONS

(TOP VIEW)

HS2 19 HS1 20 HSO 21 ROX 22 ROY 23 WC 24

ANY ²⁵

~

18

26

~

til is

'"

^f-

is c

~ ^{c c ~}

;: _{> >}

17 16 15 14 13

32R501-6I32R501 R-6 6 Channels

0

27 28 2 3

~

^{c z t!l J: >< 0 >-J: 0 >< i}

"'Must remain open

28·Lead PLCC

Ci

^N

~ ~ ~ ~ ~

^c > > > ^{C c}

^t;

28 27 26 25 24 23 22 21 WUS 29

WOI 30 VCC 31 HS2 32 HS1 33

32R501-8132R501 R-8 HSO 34

8 Channels ROX 35

ROY WC 37

RlW 38

N/C

0

41 42 43 44 1

~

^{Q z}

^~ ~

^{c z Cl x 0 J: >-0 J: 0 Z}

·Must remain open

44·Lead PLCC

>- an J:

12 11 H5X 10 H4Y H4X 8 H3Y 7 H3X 6 H2Y 5 H2X 4

>- i

>- >< Q

.... ....

J: J: Z 20 19 18

17 N/C 16 H6Y 15 H6X 14 H5Y 13 H5X 12 H4Y 11 H4X 10 H3Y H3X H2Y H2X 4

~

^x i ^>-i

THERMAL CHARACTERISTICS' 9ja

24-lead SOL 80°C/W

28-lead PDIP 55°C/W

PLCC 65°C/W

SOL 70°C/W

Flatpack 65°C/W

ORDERING INFORMATION PART DESCRIPTION SSI32R501

4-Channel SOL 6-Channel Flatpack 6-Channel PLCC 6-Channel SOL 6-Channel PDIP 8-Channel Flatpack 8-Channel SOW 8-Channel PDIP 8-Channel PLCC SSI32R501R

--~----.

4-Channel SOL 6-Channel Flatpack 6-Channel PLCC 6-Channel SOL 6-Channel PDIP 8-Channel Flatpack 8-Channel SOW 8-Channel PDIP 8-Channel PLCC

32-lead 40-lead 44-lead

ORDER NO.

SS132R501-4CL SSI 32R501-6F SSI 32R501-6CH SSI 32R501-6CL SSI 32R501-6CP SS132R501-8F SSI 32R501-8CW SS132R501-8CP SS132R501-8CH SSI32R501R-4CL SSI 32R501 R-6F SSI 32R501 R-6CH SSI 32R501 R-6CL SSI 32R501 R-6CP SSI 32R501 R-8F SSI 32R501 R-8CW SSI 32R501 R-8CP SSI 32R501 R-8CH

4, 6, a-Channel Ferrite Read/Write Device

FLATPACK 60°C/W

SOW 55°C/W

PDIP 45°C/W

PLCC 60°C/W

PKG.MARK 32R501-4CL 32R501-6F 32R501-6CH 32R501-6CL . 32R501-6CP 32R501-8F 32R501-8CW 32R501-8CP 32R501-8CH 32R501 R-4CL 32R501R-6F 32R501 R-6CH 32R501 R-6CL 32R501 R-6CP 32R501R-8F 32R501 R-8CW 32R501 R-8CP 32R501 R-8CH

No responsibility is assumed by Silicon Systems for use of this product nor for any infringements of patents and trademarks or other rights of third parties resulting from its use. No license is granted under any patents. patent rights or trademarks of Silicon Systems. Silicon Systems reserves the right to make changes in specifications at any time without notice. Accordingly, the reader is cautioned to verify that the data sheet is current before placing orders.

Silicon Systems, Inc., 14351 Myford Road, Tustin, CA 92680 (714) 731-7110, FAX (714) 731-5457

0790 - rev. 1-21 ©1989 Silicon Systems, Inc.

DESCRIPTION

The SSI 32R502R Read/Write devices are bipolar monolithic integrated circuits designed for use with center-tapped. three-terminal. thin-film or ferrite recording heads. They provide a low-noise read amplifier. write current control and data protection circuitry for as many as eight channels. They require +5 and + 12V power supplies and are available in a variety of package configurations. The SSI 32R502R provides internal 7500 damping resistors. Please refer to ordering information for different packaging options.

6, 7, 8-Channel Center-Tapped Thin Film Read/Write Device

1M "u ual ^{m ttl;;} .6\' ^{ttl ;.}

July. 1990

FEATURES

• High performance

Read mode gain

=

120 V/V Input nOise

=

1.5 nV/,JHZ maximum Input capacitance

=

23 pF

Write current range

=

10 rnA to 50 rnA

• Power supply fault protection

• Pin compatible with the SSI 32R501 R

• Designed for center-tapped thin film and ferrite heads

• Programmable write current source

• Easily multiplexed for larger systems

• Includes write unsafe detection

• TTL compatible control signals

• +5V. + 12V power supplies

BLOCK DIAGRAM PIN DIAGRAM

VDDl vee GND WUS VDD2 veT

RDX o-...,..,..~"'"'"'-""";"-'++-?'" 1---,.,."","",,'/ 1-...--.,..,,;.,""'-

RDY

D---+-+'-"--,"""-

1-,..-";'-";'",,", H-'f""'""''-'-

0790 -rev. 1-23

GND Nle HOX

CS"

HOY

RI'N

H1X

we H1Y

RDY H2X

RDX H2Y

H3X H3Y HSO

HSl H3Y

H4X H4Y HS2

H5X vee

H4Y

H5X H5Y WDI

WUS H5Y

H6X H6Y VDDl

H6Y VDD2

H7X veT

H7Y

32-LEAD SOW

CAUTION: Use handling procedures necessary for a static sensitive component.

6, 7, a-Channel Center-Tapped Thin Film ReadlWrite Device

CIRCUIT OPERATION

The SSI32R502R gives the user the ability to address up to 8 center-tapped thin film or ferrite heads and provide write drive or read amplification. Head selec- tion and mode control is accomplished using the HSn, CS and RIW inputs as shown in tables 1

&

2. Internal pullups are provided for the CS

& R/W

inputs to force the device into a non-writing condition if either control line is opened accidentally.

TABLE 1: MODE SELECT

CS

R/W

0 0

0 1

1 X

TABLE 2: HEAD SELECT HS2 HS1

0 0

0 0

0

1

0 1

1 0

1 0

1 1

1

1

o = Low level 1 = High level WRITE MODE

MODE

Write Read Idle

HSO HEAD

0 0

1

1

0 2

1

3

0

4

1 5

0

6

1

7

Taking both CS and

R/W

low selects write mode which configures the SSI 32R502R as a current switch and activates the Write Unsafe (WUS) detector circuitry.

Write current is toggled between the X and Y side ofthe selected head on each high to low transition of the Write Data Input (WDI). Note that a preceding read mode selection initializes the Write Data Flip-Flop, WDFF, to pass write current through the "X' side of the head. The zero-peak write current magnitude is pro- grammed by an external resistor Rwc from pin WC to GND and is given by:

Iw

=

KlRwc, where K

=

Write Current Constant

The Write Unsafe detection circuitry monitors voltage transitions at the selected head connections and flags any of the following conditions as a high level on the Write Unsafe open collector output:

• Head open • Head center tap open

• WDI frequency too low • Device in read mode

• , Device not selected • No write current Two negative transitions on Vl(DI, after the fault is corrected, will clear the WUS flag.

To further assure data security a voltage fault detection circuit prevents application of write current during power loss or power sequencing.

To enhance write-to-read recovery time the change in RDX, RDY common mode voltage is minimized by biasing these outputs to a level within the read mode range when in write mode.

Power dissipation in write mode may be reduced by placing a resistor (RCT) between VDD1

&

VDD2. The optimum resistor value is 1200x

50/lw

(Iw in mAl. At low write currents (<15 mAl read mode dissipation is higher than write mode and RCT, though recom- mended, may not be considered necessary. In this case VDD2 is connected directly to VDD1.

READ MODE

Taking CS low and

R/W

high selects read mode which configures the SSI32R502R as a low noise differential amplifier for the selected head. The RDX and RDY outputs are driven by emitterfollowers and are in phase with the "X" and "Y" head ports. These outputs should be AC coupled to the load. The internal write current source is gated off in read mode eliminating the need for any external gating.

Read mode selection also initializes the Write Data Flip-Flop (WDFF) to pass write currentthrough the "X"

side ofthe head at a subsequent write mode selection.

IDLE MODE

Taking CS high selects the idle mode which switches

the RDX, RDY outputs into a high impedance state and

deactivates the internal write current source. This

facilitates mUlti-device installations by allowing the

read outputs to be wire OR'ed.