HAL Id: jpa-00215320
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Submitted on 1 Jan 1973
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STUDIES ON ION IMPLANTED STEEL AND TITANIUM
N. E. W. Hartley
To cite this version:
N. E. W. Hartley. STUDIES ON ION IMPLANTED STEEL AND TITANIUM. Journal de Physique
Colloques, 1973, 34 (C5), pp.C5-169-C5-169. �10.1051/jphyscol:1973533�. �jpa-00215320�
JOURNAL DE PHYSIQUE
Colloque C5, supplkment au
no11-12, Tome
34,Novembre-Dkcembre
1973,page
C5-169STUDIES ON ION IMPLANTED STEEL AND TITANIUM (*)
N. E. W. HARTLEY et
al.
A E R E Harwell Berkshire. UK
RCsum6. - La technique d'implantation a haute energie est considbee dans l'industrie des semi- conducteurs comme une mkthode importante pour fabriquer, en une fois, des jonctions complexes.
Le developpement recent des accCl6rateurs a ions lourds a stimule la recherche dans des domai- nes plus larges. Ainsi des ions, mCtalliques ou non, peuvent Btre implant& dans des mCtaux pour Blaborer des << alliages de surface B. Les proprietes de cette zone de surface peuvent Ctre t r b diffk- rentes de celles de la masse.
De l'acier et du titane implantes d'ions divers presentent des variations notables des proprietes de frottement et de corrosion. Sur l'acier, le frottement peut varier de k 60 %, suivant la nature des ions, ce qu'on tente d'expliquer. L'oxydation a haute temperature de l'acier ou du titane a kt6 fortement reduite ou augmentee, l'effet dependant de la dose et de l'electronegativite du dopant.
Des expkriences de retrodiffusion d'ions legers ont ete faites. Sur I'acier, essay6 en frottement, on observe une redistribution, au cours des essais, des atomes implant&. Sur les specimens de corro- sion, on a observe une migration anormalement forte de l'esp6ce implantee par diffusion le long des joints de grains. L'existence de courts-circuits de diffusion assure une bonne homogenCisation du dopant inhibiteur de corrosion.
Quelques applications pratiques de ces travaux sont presentees.
Abstract. - Ion implantation is a high voltage process which enables atoms of any element to be projected within and below the surface of a solid to a small depth. This technology is now reco- gnised in the semi-conductor industry as an important method of fabricating complex junctions in a single operation, because ion implantation allows the position and quantity of the dopant to be precisely regulated.
The recent development of heavy-ion accelerators has stimulated research into broader fields of study. For example metallic and non-metallic ions may be implanted into metals to produce what may be described as a surface alloy. The physical and chemical properties of the implanted region may therefore be made very different from the bulk material.
Steel and titanium implanted with a variety of ions revealed large changes in friction and cor- rosion properties. Friction tests on steel showed that after implantation the friction changed by as much as f 60
%,
depending on the nature of the implanted ion. Tentative metallurgical reasons for the changes have been given. The high temperature oxidation of steel and titanium has been greatly reduced or enhanced by ion implantation, the magnitude of the effect depending upon the ion dose and the electronegativity of the dopant.The recoil energy spectrum of very light ions projected onto ion implanted specimens may be used to deduce the position and concentration of the implanted species (backscattering). Experi- ments with a very narrow beam of light ions on friction-tested steel suggest that the implanted ions become redistributed during repeated wear. Conventional backscattering spectra revealed that anomalously deep migration of implanted species in corrosion specimens may occur as a result of diffusion down grain boundaries. The presence of easy diffusion paths ensures that any local depletion of the oxidation-inhibiting species is rapidly compensated, so that further oxidation is prevented.
Some practical implications of this work will be discussed.
(*) Papers VI 2-5 and VII-4 in Proc. 3rd Internat. Conf. on Ion Implantation, IBM, Yorktown Heights, USA, Dec.
11-14 1972 (to be publ. by Plenum Press, 1973).
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1973533
