Structural study and electrical properties of a new arsenate compounds KNb4

Dc reactive sputtering deposition of tantalum and tantalum oxide periodic nanometric multilayers was successful with the reactive gas pulsing process. The transmission

One of the easiest ways to change artificially the electronic and optical properties of semiconductors is by forming their alloys; it is then interesting to

The great similarity of the framework [VAsO 5 ] ∞ with hexagonal tungsten bronze structure (HTB) described by Magneli (1953) [11] concerns necessary the hexagonal

For theannealed samples at 500°C, only NiSi monosilicide is detectedWhen the annealing temperature increases to 750°C the NiSi2disilicide is the main formed phase. The obtained

In this work, X-ray diffraction was involved to study the formation of crystalline nickel silicide phases.. For this purpose, Ni nanometric thin films were deposited on

Study of ferrocholesteric discotic and calamitic lyotropics by optical microscopy and X-ray

dination. The Bhatia-Thornton partial structure factors are then deduced. From the partial radial distribution functions the partial coordination numbers are calculated

Abstract. In connection with incommensurability: a) a 3c- superstructure phase has been found both in AHSe and in ADSe, b) a 2c-superstructure has been discovered in