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Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces

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Academic year: 2021

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TABLE I. Surface stabilization energy ( ΔE ), electronic band gap, and atomic displacement of surface Ga upwards ( Δd u ) or downwards ( Δd d ) for a 12-layer slab of wurtzite GaN-1H, −1 Li and ZnO-1H, −1 Li
FIG. 3. Band structures of the different phases of GaN ð10¯10Þ - 1 H in (a) pð1 × 1Þ , (b) pð2 × 2Þ , and (c) pð1 × 2Þ

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