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Metallic phase stabilization and phase diagram of (ET)3(HSO4)2

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HAL Id: jpa-00246419

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Submitted on 1 Jan 1991

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Metallic phase stabilization and phase diagram of (ET)3(HSO4)2

N. Kush, V. Laukhin, A. Schegolev, E. Yagubskii, E. Alikberova, N. Rukk

To cite this version:

N. Kush, V. Laukhin, A. Schegolev, E. Yagubskii, E. Alikberova, et al.. Metallic phase stabilization

and phase diagram of (ET)3(HSO4)2. Journal de Physique I, EDP Sciences, 1991, 1 (10), pp.1365-

1370. �10.1051/jp1:1991106�. �jpa-00246419�

(2)

classification

Physics

Abslracls 71.20H 71.30

Short Communication

Metallic phase stabilization and phase diagram

of (ET)3 (HS04)~

N-D-

Kush(I ),

VN.

Laukhin(I ),

Ji~I.

Schegolev(I ),

E.B.

Yagubskii(I),

E. Yu.

AJikberova(2)

and N-S-

Rukk(2)

(~) Institute of chemical

Physics

in

chernogolovka, Academy

of Sdence of the U-S-S-R-, 142432 chernogolovka, U-S-S-R-

(2) Moscow Institute of Fine chemical

lbchnology,

Moscow, U-S-S-R- (Received5

July

1991,

accepted

31

Ju~

1991)

Abstract. A novel lvay for obtaining

(ET)3 (HS04

)~ single crystals is reported. The metallic state of

(ET)3 (HS04)2

is stabilized at the pressure of 7-5 kbar- The metal-insulator

phase

transition is

found to be of the second order. the phase diagram of

(ET)3 (HS04)~

is presented.

Introduction.

All

recently

known ion-radical salts of BEDT with a

composition

of 3:2 and the

7-type

structure are either

insulators,

like

(ET)3 (I04)2

and

7-(ET)3 (Re04)~ [l],

or exhibit a metal-insulator tran-

sition with

cooling,

like

(ET)3(Br04)2

(2],

(ET)3Br2(H20)~

[3],

(ET)3(Cl04)2

(4],

(ET)3 (BF4)2 Ill, (ET)3 (HS04)2

[5l. As far as their transition

temperature

is

concerned,

one

can see from table I that it correlates with the unit cell volume,

decreasing

with its

diminishing.

Therefore,

one can

conjecture

that the

phase

transformation

temperature

may be funher de- creased

by applying

the pressure. This

suggestion

is

supported by investigations

of the pressure effect on the

phase

transition

temperature,

Tm;, in

(ET)3 (Cl04)2

(6], which was shown to

drop

from 170 down to 100 K under the pressure of about 10 kbar.

By extrapolating

this

dependence

to Tm; - 0 it was

supposed

[6] that the metallic state would be stable in

(ET)3 (Cl04)2

at pressures

higher

than 20 kbar.

Basing

on this result one could

hope

that a metallic state in

(ET)3 (HS04)2

with Tm; = 130 K at the ambient pressure would be stabilized on

cooling

at pressures smaller than 20 kbar. In this case the

question

about the

surperconducting

state existence in this group of

materials

might

be

investigated.

In this article we

report

that the metallic

phase

of

(ET)3 (HS04)2

is indeed stabilized at pres-

sures

higher

than 9.5 kbar. No evidence of the

superconducting

transition have been found down

to 1.3 K

(3)

1366 JOURNAL DE PHYSIQUE I N° lo

lbble I. Metal-buulator

phase

~ansition tmiperature and unit cell volumes in the c&zss

ofisostruc-

ntral 3:2 ET sails with the 7-ape lattice snucntr~

Compound

Tm;,

cellvolume,

A

(ET)3 (I04)2

> 300* 1231,4

ill

7

(ET)3 (Re04)2

> 300* 1221.7 [1]

210 1213.6 [2]

(ET)3Br2 (H20)~

185 l181.5 [3]

170 l182 [4]

150 l183.9

ill

(ET)3 (HS04)2

130 l180.8 [5j

* No data.

Expedmental.

Single crystals

of

(ET)3 (HS04)2

were obtained

by

means of electrochemical oxidation of ET in two different ways. In the first case the

synthesis

was

performed

in THF with

(Bu4N)~ 56

as

electrolyte following

the method described in

@,

and in the second case benzonitrile and l8Crown6-NH4CUS4

complex

have been used. NH4CUS4 was

synthesized by

the method

reponed

in

[Jj.

The

electrocrystalization

was carried out in a saturated solution of the

elecrolyte using plat-

inum electrodes under the constant current of 0.88

pA

and the

temperature

of 40°Cwith the initial concentration of ET

being equal

to

2x10-3

mol/l.

The

crystals

obtained have the form of

irregular elongated plates

with

typica(

dirt~ensions of the order of

(I

x 0.3 x

0.03) mm3. They

are

bigger

than those descrAed in [8] where THE and

BU4NHS04

were used. The

crystals

have been identified

by

means of

X-ray analysb.

It should be noted that

obtaining (ET)3(HS04)2

CrYStals with the use of

(Bu4N)~S6

and

NH4CuS4 electrolytes

was rather

surprising

for ET salts with

polysulfide

or

copperpolysulfide

anions were

expected

to

appear.

The

crystals

were

pasted

to

platinum

wires of 20-30 p in diameter

using

a

graphite paste

"DOTITE XC-12" JEDUSVC. The resistance measurements were carried out

by

a standard DC four

probe

method. The normal condition

conductivity

was10÷40

Ohm~~cm~t

for different

crys- tals.

The pressure was

produced

in a

"pbton-cylinder"

cell of 4 mm in inner diameter. A

cylicon- polymer liquid

was used as a transmissive medium. The pressure was fixed at the room

tempera-

ture. When

plotting (ET)3 (HS04)2 phase

dh gram it was taken into account that in such

type

of

pressure cells the pressure decreases with temperature

decreasing.

So it was corrected

according

to [9].

(4)

Results.

ljpical temperature dependencies

of the resistance at various pressures are shown in

figures

I and 2. One can see from

figure

I that the

phase

transition

temperature

decreases with

increasing

the pressure with a rate of about -20

K/kbar

and the energy gap estimated from the

slope

of the In R vs. I

IT dependencies, being equal

to 19l0 K at the ambient pressure, reduces

by

m 340 K

per kbar

~fig.3).

'

2.5 j

_

__..

)

~

_:"

(

_:"

~ 0.5 1j 2 3

'

~j

n~

#-0.5

11

~

) ~ /

- -i.5

~/

/

-2.5

0.00 0.01 0.02 0 03 0.04

1IT,

I

Iii

Fig. I. M-I transitions at various pressures revealed by resistance temperature behavior. I) I bar, 2)7 kbar,

3)

8 kbar. All pressures are fixed at 295 K

0.3

~~

/~

§0

2 _:..

~

/ ,l'

~Q /,,/" '

) ~;$/$/

~~

~

A'/

oo

'temperature,

Fig. Z Metallic behavior of the resistance at pressures higher than 9 kbar. 1) 9.5 kbar, 2) 11.5 kbar,

3)

IS kbar. All pressures are fixed at 295 K.

(5)

1368 JOURNAL DE PHYSIQUE I N°10

200~

j---~---

~-""'-~

j, 'h

$ 5~0 I

(

I

~

j1 0~b

~,

i~ ',

4J 'I

~

$

ill

~,

~

i

Pressur.e, ilbar.

Fig. 3. Pressure dependence of energy gap. The pressures correspond to 4.2 K.

0 060

=~

0 G50

$

2

do o-lo

(

3 '

~0

030

i~

fi0 020

it

o oio

o ooG

i~,

1(~

Fig. 4. Low temperature parts of resistance at various pressures. 1)9.5 kbar,

2)

11.5 kbar,

3)

15 kbar. All pressures are fixed at 295 K.

At pressures

higher

than 9.5

kbar(~)

the

ground

state of

(ET)3 (HS04)2

is metallic

(Fig.2).

At low

temperatures

the resistance tends to some residual

value,

which decreases with the pressure

(Fig.4).

No visible features of the

superconducting

transition down to 1.3 K have been observed. A

small, clearly

visible in

figure

4 increase of the low

temperature

resistance at 9.5

kbar(I ),

the border pressure of the metallic

phase stability,

may be associated with some pressure

inhomogeneily existing

in the pressure cell.

Basing

on our data the

phase diagram

of

(ET)3 (HS04)2

b

presented

in

figure

5. The resistance

minima

temperatures

have been chosen as the transition ones and the

corresponding

pressures have been corrected

according

to the method described in [9].

(I)

room temperature value.

(6)

ld~

I

jj/~

~

$

~

~

Q- oJ

~

Pressure, ilbar

Fig.

5. Phase diagram of

(ET)3 (HS04)2.

transition temperatures correspond to resistance minima in

figure

I. Transition pressures are corrected

according

to [9].

A small

discrepancy

in the border pressures of the energy gap appearance

(Fig.3)

and metal

phase stability (Fig.5)

results from

uncertainly

in both the Tm; and energy gap determination.

Discussion.

The stabilization of the metallic state in

(ET)3 (HS04)2

at the pressure of 9.5

kbar('),

which is

more than two times smaller than that in

(ET)3 (CL04)2

(6],

support

our initial

speculations

con-

cerning

the correlation between the unit cell volume and the M-I transition temperature in this 3:2 group of

compounds.

A

question

about the nature of the

phase

transformation arises. The absence of both resis- tance

jump

and

hysteresis

at the

phase

transition seems to mean that it is of second order. The energy gap behavior supports this

suggestion (Fig. 3).

The gap

gradually

decreases with

increasing

pressure and does not

change abruptly

as it

might

be

expected

for the first order transition.

X-ray analysis

seems to

point

out that

(ET)3 (HS04)2 belongs

to the 2D class of ion-radical salt

[Jj.

It is in agreement with the

experiments

on the resistance

anisotropy

carried out on the isostructural

salt

(ET)3 (Cl04)2 it. Therefore,

one can

suggest

that the

phase

transition may not result from Peirls'

instability

but is a consequence of some other interactions within the electronic system which lead to the second order

phase

transformation. Studies of the insulator state structure and the

magnetic susceptibility

can

give

an answer about the metal-insulator

phase

transition nature.

The absence of the

superconducting

transition down to 1.3 K

probably points

out that the 7-

1ype

lattice structure of 3:2

compounds

is not too favorable for

superconductivity.

But it is not excluded that

superconductivity

may be found here at lower

temperatures.

The absence of

superconductivity

may also result from

impurity

of our

samples.

As it is known

impurities strongly

suppress

superconductivity

in

organic

metals.

In conclusion, we note that in the metallic state, at

temperatures

below m 30 K the resistance of

(ET)3 (HS04)2

is

roughly proportional

to

T2 (see Fig.4)

as with many other

organic

metals [10].

One can suggest that further

decreasing

the M-I transition

temperatures

in 3:2 ET salts with the

(7)

1370 JOURNAL DE PHYSIQUE I N° lo

7-type lattice structure

maybe

achieved

by succeeding diminishing

their unit cell volume. Such a

dintinishing maybe

realized in two ways. The first consists in

using

anions smaller than

HSOi.

It was

previously reported

that the unit cell volume of

(ET)3 (Fs03)2

is 1174.1

A3 [Jj.

One can

hope

that a M-I transition will take

place

here at

temperatures

less than 100-120

lQ

and the metallic state may be stabilized at pressures < 9-10 kbar.

Another way consists in

diminishing

dimensions of the cation

by using

instead of

(BEDT-TTFj

some smaller kindred molecules.

Unfortunately,

in this way lattice structures of other

types

are

usually

obtained. For

example, lNi(DDDT)2]3 (BF4)2 Ill]

and

lNi(DDDT)2]3 (Cl04)2

(12] are not isostructural to ET salts with the same anions.

Nevertheless, obtaining

the

7-type

structure when

changing

the cation h still

posslle,

as it h

exemplified by [Pt(DDDT)2]3 (BF4)2,

which have the unit cell volume of l189.5

A3

and is an insulator at the ambient pressure [13].

References

[Ii PARKIN S-S-P, ENGLER E-M-, LEE VY. and SCHUMACKER R-R-, Mot C~yst.

Liq.

C~yst. l19

(1985)

375.

[2] BEND MA., BLACKMEN G-S-, LEUNG PC-W, CARLSCN KD., coPPs ET and WILLtAMS J.M., Mot C~yst.

Liq.

C~yst. l19

(1985)

409.

[3] URAYAMA H., SAITO G., KAwAmoro JL and TANAKA J., Chem. Lea.

(1987)

1753.

[4] KOBAYASHI H., KATO R., MORY T, KOBAYASHI A~, SASAKI Y., SArro G., ENOKI T and INOKUCHI H., Chem. Lett.

(1984)

179.

[5j KusH N-D-, YAGUBSKII E-B-, KoRarKov VE., SHIBAEVA R-P, BuRAvov L-I-, SVARYKINA JLV,

LAUKHIN VN., KHOMENKO A-G-,

Synth

Met. 42

(1991)

213.

[fl

IMAEDA K, ENOKI T, SAITO G-, INOKUCHI H., Bull Chem. Sac- Jpn 61

(1988)

3332.

[7j GATTOW G., ROSENBERG O., Z. Anofg

Allg

Chem. 332

(1964)

269.

[8] PORrER L-c-, WANG H-H-, MILLER M-M- and WILUAMS J-M-, Acta

C~ysta&p

C43

(1987)

2201.

[9]THOMPSON, Rev Sci- Insmm SS

(1984)

231.

[10] BULAEVSKJJ L-N-, GJNODMAN VB-, GUDENKC A-V, KiRiSOVNJK M-V, KoNoNovlcH PA, LAUKHJN VN-, SCHEGOLEV I-E, Zk Eksp- 7kor FidkL 94

(1988)

285

(in russian).

[11] YAGUBSKII E-B-, Korov A-I-, BuRAvov L-I-, KHOMENKO A.G., SHKLOVER VE-, NAGAPErYAN S-S-, SntucHKov Yu.T, VErCSHKINA L-V and UKHIN L.Yu.,

Syntk

Met. 35

(1990)

271.

[12j NAGAPEiYAN S-S-, SHKLOVER VE., VETCSHKINA L-V, KCTOV A-I-, UKIiIN L.YU., SUIUCHKOV YU.I and YAGUBSKII E-B-, Mater Sci 14

(1988)

5.

(13] YAGUBSKII E-B-, KCTOV A-I-, LAUKHINA L.E., IGNA3IEV A-A-, BURAVOV L.I., KHOMENKO JLG.,

SHKLOVER VE., NAGAPEiYAN S.S., SnlucHKov Yu.T, Synth. Met. 42

(1991)

2515.

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