IMPURITY-DEFECT STRUCTURES OF Sn, Sb AND Te IMPLANTED α-TIN SINGLE CRYSTALS

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IMPURITY-DEFECT STRUCTURES OF Sn, Sb AND Te IMPLANTED α-TIN SINGLE CRYSTALS

J. Petersen, S. Damgaard, G. Weyer, Jacques Chevallier, H. Nielsen

To cite this version:

J. Petersen, S. Damgaard, G. Weyer, Jacques Chevallier, H. Nielsen. IMPURITY-DEFECT STRUC-

TURES OF Sn, Sb AND Te IMPLANTED α-TIN SINGLE CRYSTALS. Journal de Physique Collo-

ques, 1980, 41 (C1), pp.C1-443-C1-444. �10.1051/jphyscol:19801172�. �jpa-00219660�

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JOURNAL DE PHYSIQUE

ColIoqw Ct , supplt5ment au n

^O

1 , Tome

41,

janvier

1980,

page C1-443

IMPURITY-DEFECT

STRUCTURE$ OF

Sn,

Sb AND Te

IMPlJW@

~ T T I N SINGLE CRYSTALS

J . W . P e t e r s e n , S. Damgaard, G. Weyer, J. C h e v a l l i e r and H.L. N i e l s e n I n s t i t u t e of Physics, U n i v e r s i t y of Aarhus, DK 8aDO Amhus C, Denmark.

1. I n t r o d u c t i o n

Massbauer emission spectroscopy on t h e 24-keV y t r a n s i t i o n of ' " ~ n h a s been a p p l i e d p r e v i o u s l y t o s t u d y i m p u r i t y d e f e c t s i n group-IV semiconduct- o r s from i o n i m p l a n t a t i o n of l g m ~ e [ 11

.

Here we r e - p o r t on experiments with a - t i n s i n g l e c r y s t a l s i n -

1 1 9 m 119

v o l v i n g i m p l a n t a t i o n s of $n

,

Sb

,

and m ~ e ,

2. Experimental procedure

The a - t i n s i n g l e c r y s t a l s were grown from a tin-mercury a l l o y . The lgml'e a c t i V J t y was o b t a i n e d from an i r r a d i a t i o n of n a t u r a l t i n w i t h 24 MeV

-

1 1 9

p a r t i c l e s . The ; %e (T = 4.7 d ) was s e p a r a t e d 1 l9m

chemically from t h e t i n t a r g e t . Te deoays t o 119 Sb (T = 38 h) which i n t u r n p o p u l a t e s t h e Mass-

bauer l e v e l of " $ ~ n . The ' " ~ b a c t i v i t y was milked l i s m

from t h e Te. I m p l a n t a t i o n s were performed a t room temperature with an i s o t o p e s e p a r a t o r a t a p e-

1 3

nergy of 80 keV. Doses of 510 a t o m s / ~ n ~ were i m -

ll9m 119

p l a n t e d f o r Te and Sb and 5

-

10 '4atoms/cm2 ll9m

f o r Sn. Massbauer emission s p e c t r a were meas- u r e d a t s o u r c e t e m p e r a t u r e s between 77 and 3 0 0 K with a resonance c o u n t e r of t h e p a r a l l e l p l a t e a v i a l a n c h e t y p e [ 21.

3 . Experimental r e s u l t s and d i s c u s s i o n l l 9 m 11s S p e c t r a from i m p l a n t a t i o n s of Sn, Sb, and l l g m ~ e i n a - t i n s i n g l e c r y s t a l s a r e d i s p l a y e d

119m

i n F i g u r e 1. The Sn spectrum h a s been decompos- e d i n t o two b i o s i o n l i n e s ( t a k i n g t h e known w a ~ d r u p o l e s p l i t t i n g of t h e SnO, a b s o r b e r m a t e r i a l i n t o account f o r each l i n e ) a s i n d i c a t e d i n t h e f i g u r e .

VELOCITY f m m l s e c l

F i g u r e 1 : Massbauer s p e c t r a measured a t s o u r c e t e m p e r a t u r e s of 77 K f o r i m p l a n t a t i o n g of

'

l g m s n (a), 1 1 9

S b ( b )

,'

lgm'l'e ( a ) i n a - t i n s i n g l e c r y s t a l s . Line 1 a + 61 =0.0 rqm/s i s a t t r i b u t e d t o a minor

l l 9 m

f r a c t i o n of Sn implanted i n t o t h e s u r f a c e oxide l a y e r of t h e sample. Line 2,6, = 2.16(5) mm/s,sbems

l l 9 m

from Sn atoms on s u b s t i t u t i o n a l l a t t i c e sites.

Compared t o an a b s o r p t i o n spectrum measured f o r t h e unimplanted s i n g l e c r y s t a l sample, t h i s l i n e i s s l i g h t l y broadened by

-

^{0.1 mm/s} and s h i f t e d to a h i g h e r isomer s h i f t v a l u e b y - 0 . 1 m m / s . This i s dye

30

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:19801172

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cl-444 JOURNAL DE PHYSIQUE

to the influence of unannealed radiation damage from the implantation. The Debye temperature of line 2 is determined to G2 = 162 (5) K from temperature-dependent measurements. This is in agreement with a value of 0 = 162(5) K for the undamaged material [3]. It should be mentioned that the shoulder on line 2 may indicate the presence of a weak third line at 6

=

3.4 mm/s in the spectrum.

The spectrum from the '19sb implantation has been analysed in terms of three lines, a surface oxide line 6 1 = 0.0 mm/s, a substitutional line at 6, = 2.1 m/s, and an additional line 3 at 6 3 =

= 2.6 (1) m/s. This line is broadened by

-

^{0.3 mm/s}

compared to line 2 and has a lower Dehye temperature,

o3

^=.¹³⁵⁽¹⁵⁾^K

.

Analogous to conclusions drawn for a very similar line in silicon [4], this line is at- tributed to Sn atoms on (nearly) substitutional sites with one or two vacancies in the nearest neigh- bour shell. The change in the Mossbauer parameters compared to an undisturbed substitutional site can be explained by the presence of dangling bonds at

the Sn atoms.

~ o s t likely the same iine ( 6= 2.67 (3)

,

AE ⁼ Q 0.4 (2) mm/s, 0 = 130 (20) K ) has been observed by

119m

vogl and Vogl [5] for Sd produced by neutron irradiation of a-tin at low temperatures. This defect line annealed at -120K in accordance with the fact that the defect is not formed in room temper-

119m

ature implantations of Sn. However, the vacancy defect is more stable when associated with Sb, thus the same Sn-vacancy structure may exist after the decay of Sb for times longer than the lifetime

( .c= 27 ns) of the Mossbauer level.

119111

The spectrum for implanted Te is decompos- ed into four lines.,Three with parameters very close to those for lines 1 - 3 and an additional line at 6, = 3.9(1) m/s. For polycrystalline a-Sn, which has a thicker surface oxide layer, this line was

observed with much larger intensity [I]. This is in agreement with a tentative assignment of this line to an oxygen-containing defect structure.

4. Conclusions

Different l19Sn defect structures have been ob- tained from implantations of g m ~ e , Sb, and 119

1 1 9m

Sn in a-tin single crystals. Implantations of 119m

Sn result in no specific defect line, however, the spectra are influenced by radiation damage and, due to the high implanted dose, the material may be amorphized. A vacancy associated impurity defect is formed in implantations of "9 Sb and

-

^{with even}

larger intensity

-

of l g m ~ e . Additionally, in 119m

Te implantations a line is observed which is assigned to an oxygen containing defect.

This work has been supported by the Danish Nat- ural Science Research Council.

References

[I] Weyer, G., Nylandsted Larsen, A., Deutch, B.I., Antoncik, E., and Nielsen, H.L., 1nst.Phys.

Conf .Ser.l (1977) 491

[2] Weyer, G., Mdssb.Eff.Method.(eds.Gruvermann, I.J. and Seidel, C.W.)

10

(1976) 301 [3] Petersen, J.W., thesis, Aarhus 1979

[4] Weyer, G., Nylandsted Larsen, A., Holm, N.E.,, and Nielsen, H.L., to be published

[5] Vogl, W. and Vogl, G., J.Physique Col1oq.z (1974) C 6

-

³²¹

and Uogl, W., thesis, Miinchen 1974