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HAL Id: jpa-00211091

https://hal.archives-ouvertes.fr/jpa-00211091

Submitted on 1 Jan 1989

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Correlation energy contribution to cohesion in covalent

structures

Peter Fulde, Gernot Stollhoff

To cite this version:

(2)

Correlation energy contribution

to

cohesion in covalent

structures

Peter Fulde and Gernot Stollhoff

Max-Planck-Institut für

Festkörperforschung,

D-7000

Stuttgart 80,

F.R.G.

(Reçu

le 6 mars 1989,

accepté

le 5 mai

1989)

Résumé. 2014 La contribution des corrélations

électroniques

à

l’énergie

de cohésion des structures covalentes est discutée. Par ce moyen la discussion est faite entre les calculs ab initio sur une base finie d’orbitales de type

gaussien

et les calculs

simplifiés

de corrélation. En considérant le

diamant, le silicium et le

polyéthylène

en détail, on montre que les différentes contributions à

l’énergie

de corrélation ont une

signification physique simple.

Abstract. 2014 The contribution of electron correlations to

the cohesive energy of covalent structures is discussed.

Thereby

a distinction is made between ab initio calculations done within a

finite basis set of

Gauss-type

orbitals and

simplified

correlation calculations.

By considering

diamond, silicon and

polyethylene

in detail it is shown that the different correlation contributions have

simple physical meanings.

Classification

Physics

Abstracts

71.10 - 71.45G - 71.45N

1. Introduction.

The

concept

of the chemical bond has proven to be a

simple,

yet

highly

successful scheme for

describing many molecules and

solids,

in

particular

those formed

by

elements on the

right

of the first row of the

periodic

table. For more details the well known textbooks of

Pauling

[1]

and Harrison

[2]

should be consulted. An

important

quantity

which one would like to

calculate and to understand in detail is the cohesive energy. For

solids,

i.e.

periodic

lattices,

refined total energy calculations based on the Local

Density

Approximation (LDA)

to the

Density

Functional

theory

have been

performed

[3].

However,

often

simplified computational

schemes are

desirable,

in

particular

when one wants to elucidate trends and overall features. For that purpose Friedel [4, 5] gave a

simple analysis

of cohesion in covalent structures, based

on a Hückel

approximation. Thereby

he noticed and

pointed

out the

importance

of electron correlations for a

quantitative understanding

of cohesion. He gave estimates of their

contributions

[5].

Since then this

important point

has obtained considerable attention and calculations with

quantum

chemical accuracy have become available even for solids. Stated

differently,

correlation energy contributions to cohesion in solids can be calculated with an

accuracy common for small

systems,

like

CH4

(methane).

(3)

The aim of this paper is to discuss those ab initio

type

of calculations of the correlation contributions to cohesion. From them

parameters

can be

extracted,

which may be used as

input

for

simplified

models.

The framework within which electron correlations are treated is that of the Local Ansatz

[6],

for which

quantum

chemical accuracy was demonstrated before. The way in which this

theory

is

presented

here differs from

previous

ones. Here the relevant

equations

are derived

by using

the

operator

(or Liouville-)

space instead of the Hilbert space. For

systems

with

weakly

correlated

electrons,

like in most covalent

bonds,

this new formulation leads

only

to a

rederivation of

previous equations.

But it has the

advantage

that it may be also used for

strongly

correlated electronic

systems

[7]. Therefore it may

serve as a

step

towards a

unifying

description

of weak and

strong

correlations.

The paper is

organized

as follows. In the next section the

equations

are summarized which are

required

for ab initio calculations of cohesive

energies. Applications

of the formalism are

found in section 3 where a number of

examples

are discussed.

Simplified computational

schemes follow in section 4. In that section also a

comparison

with the ab initio results is

provided

and an extraction of model

parameters

is described. Section 5 contains a summary

and the conclusions.

2.

Computational

method.

The ab initio calculations of the correlation energy are done within a finite basis set

fi(r)

of

Gauss-type

orbitals

(GTO’s).

In terms of them the Hamiltonian is written

The

operators

ai’ aju

fulfill the commutation relations

where

is the

overlap

matrix of the basis-set functions. The Hamiltonian is divided into a self-consistent field

(SCF)

part

HSCF

and a residual interaction

part

Hres,

i.e.

Let

1«/10)

denote the

ground

state of H with energy

Eo

and

1 cPSCF)

the

ground

state of

HSCF

with energy

ESCF.

The correlation energy contribution

Ecorr

to the

ground-state

energy is

It can be

expressed

in a

simple

form when one works in

operator

-

or Liouville space with a

metric [7]

(4)

properties

are introduced and discussed in detail in reference

[8].

From reference

[7]

it follows that the correlation energy can be written in the form

The

element

,f2)

in Liouville space

can be considered as

representing

the correlated

ground

state

1 tPo),

in the same way as the wave

operator à

does,

which transforms the SCF

ground

state 1 CPSCF)

into the exact

ground

state

1 tPo),

i.e.

The

quantity

Lo

in

equation (8)

is a Liouvillean or

superoperator

which acts on other

operators A according

to

Any

approximation

in il reflects itself in one for

Ec.,.

Because

Ecorr

is

completely expressed

in terms of

cumulants,

it remains size consistent when

approximations

for Q are made. This

means that the correlation energy is

always

proportional

to the electron number when the latter becomes

large.

As is well

known,

some of the standard

quantum

chemical methods like

the

configuration

interaction

(CI)

method do not fulfill this

requirement.

In order to

compute

Ecorr approximations

for 1Ii are

required.

One

possible approximation

is to limit all calculations to an essential

part

ao

of Liouville space and to

neglect

comple-tely

the

complementary

part

:RI

[9].

Assume that

fllo

is

spanned by

the elements

JA,,)

( v = 1, ... M ).

Then

equation

(7)

reduces to

where P is a

projector

which

projects

onto

fllo. By applying

projection techniques

it is a

simple

matter to show

that

This

equation

can be considered as a

special coupled-cluster approximation,

or

alternatively,

as a

generalized

form of a

coupled

electron

pair approximation

(CEPA-O).

The second

important approximation

concerns the form of the

operators

Ai.

For them the

Local Ansatz is used

[6].

It takes into account the local character of the correlation hole and

thereby

reduces

decisively

the

complexity

of the calculations.

Starting point

is a set of local functions

For a

given

i the

f m (r)

are limited to GTO’s centered at a

particular

atom. The

operators

bi (bi )

create

(destroy)

electrons in local orbitals

gi (r)

with

spin .

With their

help

(5)

and

spin

operators

can be defined. The three

components

of a are the Pauli matrices. From them the

following

local

operators

are constructed

The elements in Liouville space

with

describe local

two-particle

excitations out

of 10 SCF>

but in a way which ensures size

consistency.

The Local Ansatz identifies the

elements

J A,)

with

the

150,,).

The correlation energy follows then from

equation

(12).

3.

Applications.

In the

following

a number of

applications

of the above formalism are discussed.

They

deal

with the determination of the correlation contribution to the cohesive energy of diamond

[10, 11],

silicon

[12]

and

polyethylene

[13].

The

computations

were

performed by using

a finite basis set

consisting

of

Gauss-type

orbitals

(GTO’s).

For the SCF

part

of the calculations a double-zeta basis set was chosen in all three cases. For diamond and

polyethylene

it consisted of four

(contracted)

s orbitals and two sets of

(contracted) p

orbitals as far as the C atom is concerned. For the H atom the basis consisted of two s orbitals. In the case of Si a

pseudopotential

was used for the core electrons

[14]

and a basis

consisting

of three

(contracted) s

orbitals and two sets of

(contracted) p

orbitals for the valence electrons.

Very

recently

the calculations for diamond and silicon were

repeated by including

a set of d

functions,

i.e.

polarization

functions,

in the above calculations

[15].

This was made

possible by

making

use of the program

package

CRYSTAL

[16].

The

SCF

binding energies

are obtained

by subtracting

the

corresponding

atomic

energies

calculated within the same

approximation.

The deficiencies in the former can be estimated

from calculations for small molecules

using larger

basis sets

[17].

The final results are listed in

table I

together

with the estimated uncertainties.

They

refer to the limit of a

complete

basis

set, i.e. the Hartree-Fock

(HF)

limit. For further details the

original

literature should be consulted

[10-13, 17].

As

regards

correlation

energies,

a distinction is made between interatomic and intra-atomic

contributions. Interatomic correlations suppress fluctuations in the valence electron number between different atoms.

They

can be described within a minimal basis set, i.e. one which has as many basis functions as there are valence electrons. In that case the local functions

gi (r) (see

Eq.

(13))

are the atomic

parts

of the bond

orbitals,

after

they

have been

(6)

Table 1. - Valence-shell correlation and

binding

energy contributions

for

diamond,

silicon and

polyethylene

in eV per unit cell.

Binding

energies

are obtained

by

adding

(1)

and

(2)

and

subtracting

the

free

atom values

(3).

atoms

they

are

essentially

sp3 hybrids

with small

orthogonalization

tails on

neighboring

sites.

On H atoms

the gi

(r)

coincide with the atomic s

orbitals,

again

with small

hybridization

tails.

Once the

gi (r)

are determined the

Om

operators

follow from

equation

(16),

and the correlation energy is obtained from

equation

(12).

The results are

presented

in table I. The contributions of interatomic correlations to the total correlation energy are of the order of 20

to 30

percent.

They

contribute

(almost)

fully

to the cohesive energy (for more details see

Refs.

[6,

11,

13]).

The dominant

part

comes from the

operators

ni 1 ni 1 . These

operators

and

operators

of the

form ni nj

where i

and j

denote

hybrids

on the same atom reduce fluctuations in the valence-electron number at an atomic site.

By

means of the

operators

si

sj

(see

Eq.

(15))

Hund’s rule correlations are introduced.

Operators

of the

form ni nj

and si

sj

with i

and j referring

to

hybrids

on different atoms allow to include correlations over

larger

distances which turn out to be van der Waals interactions between bonds.

The

largest

contribution to the correlation energy

originates

from intra-atomic correlations.

They

describe correlations between electrons on the same atom and hence the

strong

spatial

variation of the correlation hole of an electron at small

distances,

i.e. within an atomic volume. Due to the cusp in the

pair

distribution function in the limit of small distances

(correlation cusp),

the intra-atomic correlation energy is

only slowly

convergent

with

increasing

size of the basis set. Since this

problem

occurs for a

single

atom as well as for a

molecule or

solid,

the contribution of intra-atomic correlations to cohesion is much less sensitive to the size of the basis set. For a reasonable

description

of intra-atomic correlations

the use of

polarization

functions is

mandantory

(i.e.

one set of d functions in the case of C and

Si atoms, and one set of p functions in the case of H

atoms).

The functions

gi (r)

which are

(7)

decrease.

They

subdivide the atomic volume and need not be

orthogonal

with

respect

to each other. Their detailed

description

can be found in reference

[11-13].

The results of the

calculations are found in table I. Also listed are

neighboring

site and

overlap

corrections.

They

are small and are obtained

by treating

simultaneously

intra-atomic correlations on

neighboring

sites.

This is the most elaborate

part

of the correlation calculations. It does not involve more

numerical work than

treating

a small

molecule,

like

ethane,

within the same basis set.

By

present

standards this is a rather trivial

task,

indeed.

There are a number of

shortcomings

of the way in which correlations have been treated. One is the Local Ansatz itself. It misses

typically

of the order of 5 % of the correlation energy which can be obtained within a

given

basis set. A second one is the limited size of the basis set

discussed above. From

computations

on small molecules with C or Si atoms and

comparable

bonds it is known that deficiencies caused

by

the basis set are

roughly

twice as

large

when an

atom is

part

of a molecule or solid than for a free atom

[17].

The estimated corrections of the

two

shortcomings

to the correlation

energies

are added to the final values in table I. One notices that electron correlations contribute between 21 % and 24 % to cohesion in the three

cases under consideration. The results obtained set a standard with

respect

to accuracy of

correlation calculations for solids and

polymers.

Recently

a calculation of the correlation energy for the

ground

state of diamond was done

by using

a Jastrow wave function

[18].

This

implies working

with

specific

two-particle

functions. The basis set

problem

is avoided this way.

Using

a Jastrow wave function

corresponds

to

assuming

a correlation hole for electrons which is translational invariant. The

computation

of the

expectation

value of the

ground

state energy was done with the

help

of Monte Carlo calculations. The correlation energy obtained within these calculations agree well with the correlation energy listed in table 1

despite

the fact that the

long-range

part

of the correlation hole is assumed to fall off

exponentially

instead of

r- 6

as

required by

the van der

Waals nature of correlations.

It is very instructive to consider the

pair-correlation

function in more detail for the

systems

under consideration. As will be shown it differs

considerably

from the one taken from a

homogeneous

electron gas calculation. The dominant

changes

in the

pair

correlation function

come from interatomic

correlations,

in

particular

from

operators

of the form ni t ni j and

ni

n ..

The

changes

decrease fast with

increasing

distance r due to the van der Waals nature of the interatomic correlations at

large

distances. Therefore the relevant

quantities

to

study

are

and

The

subscripts i, j

refer to functions gi (r) used for the

description

of interatomic

correlations,

and furthermore to

pairs

of states on the same atom. For

nearly homopolar

bonds

(ni t ni ) =

0.25 and

(nz

nj> ;z=

1. Listed in table II are

Aji

and

Liij

for the different bonds in

CH4,

C2H6

[17],

Si2H6

[12]

and the three

systems

diamond

[11],

silicon

[12]

and

polyethylene

[13],

respectively.

It is noticed that the individual correlation corrections compare well with each other.

Therefore,

the correlation hole remains almost

unchanged

when the size of the

system

increases. This is in accordance with

simple

intuition. In distinction to what one

might

(8)

Table II.

- Changes

in the

pair-correlation

function

caused

by

electron correlation. For the notation see

equations

(19, 20).

The

subscripts

a and b

refer

to

hybrids

on C or Si atoms

pointing

in the direction

of

(a)

H atoms and

(b)

C or Si atoms,

respectively.

Finally,

a

comparison

is made of the total

charge

fluctuations on a C or Si atom in different chemical environments. For

nearly homopolar

bonds it is

where n denotes the

operator

of the total valence electron number on atom A. Values for

(dnÃ)SCF

and

(An A 2 )c.,r

with A

referring

to a C or Si atom are

given

in table III for different

systems.

It is seen that the reduction of total

charge

fluctuations due to correlations is almost the

same in the different

systems

under consideration.

Table III.

- Charge

fluctuations

on the individual C and Si atoms.

4.

Simplified

correlation calculations.

The correlation calculations can be done

analytically

when one restricts onself to a minimal basis set, and when the Bond Orbital

Approximation

(BOA) [2]

is made. Consider elemental semiconductors. In that case the

operators

a:’

create an electron in an atomic

sp3

hybrid.

The SCF

ground

state in BOA is of the form

(9)

The two

sp3

hybrids forming

bond I are indexed

by

the

subscripts

1 and

2,

respectively.

In BOA the

hybridization

par Ho of the Hamiltonian

simplifies

to

The interaction

part

of the Hamiltonian is

approximated by

The

part

Hl

includes the electron interactions at a

given

atomic site A. It is here reduced to

three Slater

parameters.

One,

Ù,

is a Hubbard like on-site Coulomb interaction while the

second,

JI

is an on-site

exchange

interaction. The third

parameter,

i.e.

J2,

enables one to

distinguish

between the Coulomb

repulsion

of electrons in the same and in different

sp3

hybrids.

Thus

Terms which are not

biquadratic

in f

and

f’

do not contribute to

ground

state correlations when the BOA is made. Therefore

they

have been

dropped

here. The index

f(= 1,

...4 )

refers to the different

sp3 hybrids

on atom A.

The Hamiltonian

H2

contains the Coulomb interactions of electrons on different sites

A,

A’. It is

The Hamiltonian used here differs

slightly

from the one used in reference

[19]

which included more interaction matrix elements. The

advantage

of the

present

form is that its relation to a

multiband Hubbard Hamiltonian is better seen.

In BOA the

density

matrix takes the

simple

form

Because a minimal basis set is

used,

only

interatomic correlations can be calculated.

Correlations within a bond have a similar effect like in a

H2

molecule,

i.e. those

configurations

are favoured in which there is one electron at each of the atomic site

participating

in the bond. Correlations between different bonds are

significant only

when the bonds involve

hybrids

of

(10)

essential

part

of Liouville space

ao.

They

are

given by equation

(17)

with

Om

of the form

(compare

with

Eq.

(16)),

The

long

range

part

of the van der Waals correlations discussed in the

preceding

section is

neglected by

this choice of the

Om. When the correlation energy is

determined

according

to

équation

(12)

it is found that the

only

part

of

H2

which contributes are matrix elements

VAA,,

where the

hybrids

(A,

l)

and

(A’ , 1 ’ )

belong

to the same or nearest

neighbor

bonds.

They

are denoted

by

V1,

V2

and

V3

and from

figure

1 one can read off which

hybrids

are

involved in the three cases. It turns out that

they

appear in the correlation energy calculation

only

in the combinations

( U

+

2 J2 -

V 1 )

and

( U -

2

V 2

+

V 3 ),

respectively.

Therefore it is

helpful

to introduce renormalized interactions

Ueff

and

Jeff

through

Fig.

1. - Notation used for the Coulomb matrix elements between different

hybrids.

When in

equation

(27)

the

quantities

(!7+2./2)

and Ù

are

replaced by

(Ueff + 2 Jeff)

and

Ueff ,

then with

respect

to correlation energy calculations the effect of H2 is included and therefore that

part

of the Hamiltonian need not to be considered further. When

Ueff

is written as

U - V

1 +

[- 2 V 2 + V 1 + V 31

one can

interpret

the sum of matrix elements

in brackets as a

polarization

contribution which increases

(0 -

Vi).

Since

only

two kinds of correlation

operators

are

included,

one is left with two

independent

parameters,

which enter

into the correlation calculation for the

ground

state. The

parameters

in the Hamiltonian

Hl

condense into

The fact that

only

two

independent

parameters

appear in the correlation calculations can be

(11)

One notices that in terms of

LI

and

J the

parameters

ql, q2 are of the form

q1 to =

"0 + 2 J and

When the interatomic correlation energy is calculated

according

to

equation (12)

one finds

In order to determine the

parameters

ql, qz for diamond and silicon one can

proceed

in two

different ways. One consists in

extracting

the values of the different matrix elements from an

ab initio SCF calculation of the

type

discussed in the last section. That was the

approach

used in reference

[19].

For

example,

for diamond the

following

values were

found,

(/+2./2

=

22.5 eV

(note

that this

quantity corresponds

to U in Ref.

[19]),

JI

= 1.9

eV,

and

V

= 13.3 eV. One notices that

(U

+ 2

J )

is

considerably

less than

( Û

+ 2

J 2)

because of the

large

intersite Coulomb interaction

Vl.

Here we

proceed differently,

i.e.

by making

use of

and

by taking

those values from the ab initio calculation described in the

preceding

section. This way the following values are found for diamond

(C.)

and silicon

(Si.)

When the values for diamond are

compared

with the

previous

ones, one notices a difference in

( LI + 2 J )

by

1 eV. The source of this difference are

improvements

in the ab initio

calculations

[11]

as

compared

with reference

[10, 19].

The fact

that J (C,,,,)

= 1.5 eV is smaller

than

Yi(Coo)

= 1.9 eV

reemphasizes

the

strong

renormalization due to

polarization.

For

comparison

the values

( U

+ 2

J2 ), J2

and

Jl,

were also determined for a

single

C and Si

atom from an ab initio calculation. The

following

values were found

A

comparison

with the values for diamond shows

strong

renormalization effects. For the

atoms it holds

that J2 :::. Jl.

The relative small value of

J (C. )

indicates that

Jeff

is

appreciably

smaller

than Jz.

This is due to a sizeable contribution of

[-

2

V 2

+

V

+

V3]

as

explained

in

the text

following equation

(31).

In order to determine the

parameters

ql, q2 one needs to know also the value of

to.

It can be obtained

by

a fit of the bands obtained from a BOA with those obtained from an

Hartree calculation

(see

Ref.

[19]).

The values

to(Coo)

= 10.7 eV and

to(Si,,)

= 5.0 eV were

(12)

the

following

values for the interatomic correlation energy per unit cell are

obtained,

E inter(C.

= 2.3

[eV/uc]

and

E,,ter(Si.)

= 1.1

[eV/uc],

respectively. They

are in

fairly good

agreement

with those of the ab initio calculation

(see

Tab.

I).

When

only

the

operators

(30)

are used in such a calculation the

corresponding

values are 2.2

[eV/uc]

for diamond and 1.1

[eV/uc]

for

silicon,

respectively.

But when the

long

range-part

of the van der Waals correlations as well as

spin

correlations are

included,

and furthermore when the deficiencies

of the Local Ansatz are corrected for the

following

total interatomic correlation

energies

are

found

These numbers differ somewhat from earlier ones in reference

[19].

The reason for this

difference are

improved

values for the interaction matrix elements from ab initio calculations.

The

present

results of the

simplified

calculations

reproduce

well the exact ones

given

in table I.

The same has been found to hold true for a considerable number of small molecules

involving

first row atoms

[20, 21].

Until now

only

interatomic correlations were

considered,

because of the minimal basis set

which has been used. Intra-atomic correlations can be accounted for

by using

an « atoms in molecules »

type

of

approach

[22, 20].

This is

possible

because the two

types

of correlations

are almost

independent

of each other. Within that

approach

the intra-atomic correlation energy per unit cell is

given by

Here

P corr (v)

is the

probability

of

finding

at a C atom

(in

the case of

diamond)

or a Si atom

(in

the case of

silicon) v

valence electrons. The

corresponding

atomic correlation energy is

£;orr.

The latter can be

decomposed

into

where Wv

(i )

denotes the relative

weights

of different

configurations

when v valence electrons

are

present

and

Eat(i)

is the correlation energy of v valence electrons in

configuration

i in a free atom

(ion).

The latter can be found in the

literature,

in tabulated

form,

for a

number of atoms of the first row

[23, 24].

What is

required

is a

specification

of

PCOff(V)

and

w v (i ).

For

pcorr(v)

a Gaussian distribution of the form

is chosen centered at

4,

which is the average valence electron number in elemental semiconductors. Its width is determined

by

the total

charge

fluctuations

(An’).,,

(see

Eq.

(21)),

and can be

computed

like in the ab initio case discussed before. For the relative

weights

w"

(i )

it is assumed that

they

are the same as e.g. on the C atom in

CH4,

so that

they

are

easily

determined.

(13)

for a free C atom, one obtains the contribution to cohesion. Instead of

doing

this,

a

simple

algebraic

expression

of the form

can be used for the intra-atomic correlation energy of a first-row atom A

[20, 21].

It was

obtained

by investigating

and

analyzing

a

large

number of molecules

consisting

of atoms of the first row.

Thereby

it was found that the final result for the intra-atomic correlation energy of an atom A

depends only

on its average number of valence electrons

nA

and on the ratio

rP =

np /iiA

of the p electron

number n-P

to

fiA.

Equation (43)

contains also the correlation contributions of the core electrons and therefore should not be

directly compared

with the

corresponding quantities

in table I. For the intra-atomic correlation of H atoms in molecules a

similar

simple algebraic expression

is

found,

namely

In the

following

equations

(39)

and

(43)

are

applied

to

compute

the correlation energy contribution to the cohesive energy of diamond. For an evaluation of

equation

(43)

the values

fie

= 4

and rc

= 0.75 are used. This

yields

the

following

intra-atomic correlation

energy per unit cell

When the free atom value of

E(C)=20134.26[eV]

is subtracted two times

following

contribution of intra-atomic correlations to cohesion is found

Together

with the interatomic contribution

(39)

this

gives

a total contribution of correlations

to cohesion

This value agrees

reasonably

well with the ab initio value listed in table I.

A similar

analysis

has been done for

polyethylene.

The value obtained for

EBorr agrees

within 5 % with the one of the ab initio calculation found in table I.

5.

Summary

and conclusions.

It has been demonstrated that correlation energy calculations for covalent solids can be done on an ab initio level. With their

help

one can determine the correlation contribution to

cohesion. It was also shown that the ab initio results can be well

approximated by

a

simplified

model calculation based on the BOA. The model Hamiltonian contains on-site interactions

only,

with renormalized matrix elements. In

particular

the on-site Coulomb interaction is

strongly

renormalized. This is due to a considerable interaction of electrons on

neighboring

sites,

which is

incorporated

in the renormalization. The

theory

has been

applied

to

diamond,

silicon and

polyethylene.

In the three cases correlations contribute between 20 % and 25 % to

cohesion.

Acknowledgements.

We are

grateful

to the

Quantum

Chemistry

group at the

University

of

Torino,

in

particular

to

Dr. M. Causa for

making

their program CRYSTAL available to us. We also would like to

(14)

References

[1]

PAULING L., The Nature of the Chemical Bond and the Structure of Molecules and

Crystals,

3rd Ed.

(Cornell

University

Press)

1960.

[2]

HARRISON W., Electronic Structure and the

Properties

of Solids

(Freeman,

San

Francisco)

1980.

[3]

see e.g. SKRIVER H. L., The LMTO Method,

Springer

Series in Solid-State Sciences Vol. 41,

Springer-State

Sciences Vol. 41

(Springer-Verlag, Heidelberg).

[4]

FRIEDEL J., J.

Phys.

France 39

(1978)

651.

[5]

FRIEDEL J., J.

Phys.

France 39

(1978)

671.

[6]

STOLLHOFF G. and FULDE P., J. Chem.

Phys.

73

(1980)

4548 and earlier references therein.

[7]

BECKER K. W. and FULDE P., Z.

Phys.

B 72

(1988)

423.

[8]

KUBO R., J.

Phys.

Soc.

Jpn

17

(1962)

1100.

[9]

BECKER K. W. and FULDE P., J. Chem.

Phys.,

in

print.

[10]

KIEL B., STOLLHOFF G., WEIGEL C., FULDE P. and STOLL H., Z.

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B 46

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1.

[11]

STOLLHOFF G. and BOHNEN K. P.,

Phys.

Rev. B 37

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4678.

[12]

GANDUGLIA PIROVANO M. V., STOLLHOFF G., FULDE P., BOHNEN K. P.,

Phys.

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5156.

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KÖNIG G. and STOLLHOFF G., J. Chem.

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PREUSS H., STOLL H., WEDIG U. and KRÜGER Th., Int. J.

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113.

[15]

CAUSA M., SIM F., STOLLHOFF G.,

unpublished.

[16]

DOVESI, PISANI C. and ROETTI

C., Ab

initio HF-treatment of

Crystalline

Systems,

Lecture Notes in

Chemistry

(Springer, Berlin)

vol. 48

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[17]

STOLLHOFF G. and VASILOPOULOS P., J. Chem.

Phys.

84

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2744 ; 85

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3138.

[18] FAHY

S., WANG X. W. and LOVIE S. G.,

Phys.

Rev. Lett. 61

(1988)

1631.

[19]

BORRMANN W., FULDE P.,

Phys.

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7800 and ibid. B 35

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9569.

[20]

PFIRSCH F., BÖHM M. and FULDE P., Z.

Phys.

B 60

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171.

[21]

OLE015A A., PFIRSCH F., FULDE P., and BÖHM M., J. Chem.

Phys.

85

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5183.

[22]

LIEVIN J., BREULET J., CLERCQ P. and METZ J. Y., Theor. Chim. Acta 61

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512.

[23]

VERHAEGEN G. and MOSER C. M., J.

Phys.

B 3

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478.

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