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Microstructures on Material Properties

W. Craig Carter

Abstract|Methods for and computed results of

includ-ingthephysicsandspatialattributesofmicrostructuresare

presentedforanumberofmaterialsapplicationsindevices.

The researchin ourgroup includes applicationsof

compu-tationofmacroscopicresponseofmaterialmicrostructures,

thedevelopmentofmethodsforcalculatingmicrostructural

evolution,and themorphologicalstabilityofstructures. In

thisreview,researchhighlightsarepresentedforparticular

methodsforcomputingtheresponsein: 1)ferroelectric

ma-terialsfor actuatordevices; 2) coarse-grainingofatomistic

dataforsimulationsofmicrostructuralevolutionduring

pro-cessing; 3)periodic and non-periodic photonic composites;

and4)re-chargeablebatterymicrostructures.

I. Introduction

M

ICROSTRUCTURES in uencemanymaterial

prop-erties and thereforehavesigni cantpractical

appli-cationsintheapplicationofmaterialsindevicesand

struc-tures. In the generalcase, a materialmicrostructure is a

complexensemble ofcrystalline materialsin alarge

num-beroforientations, secondphases,interfaces,and defects.

The complexity of microstructures and their description

is the originof the diÆculty of including their e ect into

the design of materials. Furthermore, practical problems

ofmicrostructuraldesignforenhancedmaterialproperties

is protracted by thelack of suÆcient quantitative

under-standing ofthe role ofmicrostructure in material

proper-ties. Ourgroupconsistsofoneprofessor,twopostdocs,six

MITand oneSMA graduatestudent. 1

Wedoresearchon

prediction, bothcomputationaland theoretical, of the

ef-fectofmaterialmicrostructuresonmacroscopicproperties

andontheevolutionofmicrostructure. Ourresearch

pro-gram at MIT focuses on thequanti cation of

microstruc-ture,predictionofmaterialpropertiesfrommicrostructural

data, and thee ect of materials processing on the

evolu-tionofmicrostructuresinmaterials. Wedevelop

computa-tional methods of computing that include microstructure

andthesemethodsaredemonstratedtoSMAstudentsand

usedin theirresearch.

Thisreportfocussesonthoseaspectsofourresearch

pro-gramthatisdirectlyrelatedtoourSMAactivities.

Signif-icantly moredetailed aspectsof particularresearchtopics

The work was supported by the Singapore-MIT Alliance, the

National Institute of Standards and Technology grant number

70NANB1H0031, the National Science Foundation grant number

010252.

W. Craig Carter is the Lord Foundation Associate Professor of

Materials Science at MIT, Room 13-5034, 77 Massachusetts Ave.,

Cambridge, MA 02139-4307 USA, 617-253-6048 ccarter@mit.edu

http://prue.mit.edu/~ccarter/.

1

W.CraigCarter;RajeshRaghavanandAndrewReid;Catherine

Bishop,EdwinGarcia,MartinMaldovan,EllenSiem,Andrew

Taka-can be found in the reports of R.E. Garc 

ia and M.

Mal-dovanofourresearchgroup.

II. Microstructural Effectsin Piezoelectric

Materials

In a piezoelectric material, polarization develops as a

response to a stress eld. This polarization eld is in a

directionthatisrelatedtothecrystallographicaxesofthe

underlyingpiezoelectricmaterialandtheorientationofthe

appliedstress. Similarly,anappliedelectric eldwillcause

apiezoelectricmaterialto developastress-freestrainthat

dependsoncrystallographicorientationaswell.

Many devices, such asactuators and sensors, are

com-posed ofpolycrystallinepiezoelectricmaterialsand

there-fore the induced electric elds and stresses of

individ-ualgrains areinterrelated throughthepolycrystalline

mi-crostructure.

It is possible|through processing|to create materials

in which many of thegrains in apolycrystallinematerial

tendto shareacommoncrystallographicaxis. The

distri-bution of orientationsiscalled the polycrystallinetexture

of a microstructure; a highly textured material will have

a high probability of grain alignment abouta texture

di-rectionandanuntexturedmaterialwillhavenocorrelated

alignment.

Onepracticalquestionabouttextureinpiezoelectric

ma-terials might be, \Is there a particular microstructure or

texturethatresultsin anoptimalpiezoelectricresponse?"

Theanswertothispracticalquestioniscomplicatedbythe

factthattheelasticityislocallycoupledtothepolarization

eldinamannerthatdependsonthelocalcrystallographic

orientation;thereforetheanswermustaccountfore ectof

microstructure. Figure1isanillustrationofthis.

We haveextended apublic domain nite element code

(OOF: http://www.ctcms.nist.gov/oof/) that was

devel-oped to treat the thermoelastic behaviors of

microstruc-turestotreatthecaseofthecoupledpolarizationand

ther-moelastic behavior. The extension simultaneously solves

the electrostatic Maxwell'sequation and the elastic

equi-libriumequationsusingorientation-dependentpiezoelectric

andcompliancetensorsfromarbitrarymicrostructural

im-ageswith speci able boundaryconditions. The code uses

a niteelementformulationandhasbeenadaptedtosolve

nonlinearpiezoelectricresponse.

Tocharacterizethee ectofthemicrostructuraltexture,

we have applied the code to a series of computer

gener-ated microstructures based on a Voronoi tessellation on

(2)

P(

ξ)

ξ

Cook and Jaffe "Piezoelectric Ceramics"

. Academic Press Inc. London, 1971

∆V

−10.51 MPa

10.67 MPa

σ1

+

σ2

+

σ3

250

µm

100

µm

Figure 1 Illustration of the e ect of microstructure on a

polycrystalline piezoelectric material. A polycrystalline material,

suchasthemicrographoftetragonalsymmetryBaTiO

3

intheupper

left,willhaveaprobabilityofhavingitsuniquec-axisoriented by

an angle  with respect to a texture-direction. Such probabilities

aretypicallycharacterizedbytheMarch-Dollasedistribution(upper

right). A representative microstructure (center) with an applied

voltage will develop microstructural stresses and a macroscopic

strain. The bottom gure is the result of a simulation using the

March-Dollasefunctionasthe probabilitygeneratoraMonteCarlo

instanceoftherepresentativemicrostructure.Boththemacroscopic

straincanbecalculatedasastatisticalmeasureofthecharacteristic

piezoelectricresponseofthemicrostructureandtheresidualstresses

canbeusedtoevaluatethemechanicalreliabilityofthematerial.

is randomly assigned a crystallographic orientation from

a parameterized texture orientation distribution as

illus-trated in Figure 1 and then assigned elastic and

piezo-electric properties associated with that orientation. Each

simulatedmicrostructureisplacedinanelectric eld with

stress-freeboundaryconditionsandthemacroscopic

piezo-electric coeÆcients can be determined directly from the

averagestrain. An exampleoftheresultsofalargesetof

simulationsforaPZN-PTpiezoelectricmaterialappearsin

Figure2.

Twopapersthat describethetheoreticalandnumerical

aspects and numerical simulations of microstructures are

−0.1

0.1

0.3

0.5

0.7

0.9

1.1

−1.0

0.0

1.0

2.0

3.0

4.0

b=1

r=0.7

1.5×10

-4

-1.5×10

-4

εxy

1.5×10

-4

-1.5×10

-4

b=0.5

r=1

εxy

250

µm

250

µm

250

µm

250

µm

MRD = 1

MRD = 2.9

Figure 2 Results of a large number of simulations of the

polycrystalline piezoelectric response against a texture parameter.

Theordinateisthed15macroscopicpiezoelectriccoeÆcient

normal-ized by the valuefor single crystalPZN-PT.The abscissa,r, isa

measure of the crystallographictexture|if r = 0 the c-axes have

randomdirectionsandifr=1c-axesareperfectlyalignedwiththe

directionofthe applied eld. Becausepiezoelectriccrystalsdo not

have an inversion center, another texture parameter b is included

thatrepresentsthe probabilitythatthe positivec-axisisaligned in

thedirectionoftheapplied eld.

Thedatashowthatthe d15piezoelectriccomponentisenhanced in

untexturedmaterials.Thisisaresultofthecontributionofthelarger

d

33 andd

31

modesfrommisalignedgrains. Anumerical

representa-tionoftheinducedmicroscopicshearstressintheas-poledcondition

isincludedinthe gurefortwodi erentinstancesoftexture.

Such calculations can beused to predictaverage valuesof

macro-scopicresponseaswellastheirvariation.

III. Coarse-Grainingof Atomic Datafor

Continuum Simulations

Evenwithcurrentfastcomputationalprocessors,itisnot

possibletoperformatomisticcalculationsonanamountof

material that is typically occupied by materials in

com-mercial use|or over time-scales that approach the order

oftypicalmaterialsprocessingconditions. Formany

appli-cations orsolutionsto commercial materials design

prob-lems,itisnecessarytoresorttocontinuumapproximation

formaterialscomputation.

Nevertheless, discrete atomistic calculationsdo provide

useful resultson verysmall scales. Therefore itis

poten-tially useful to consider methods that extract data from

discrete computations and coarse-grain that data sothat

it can be incorporated into a continuum calculation at a

largerscale.

Oneexampleofapotentiallyusefulcontinuummodelis

(3)

crystallo-are calculated from a variationalprinciple from a

contin-uum representation of energies. Atomistic computations

resultin discretedatasets representingequilibrium

struc-turesandenergies.

We have developed a coarse-grainingmethod for

map-pingdiscretedatatoacontinuousstructuralorder

param-eter. Thismethodisintendedtoprovideausefuland

con-sistent method of utilizing structural data from

molecu-lar simulations in continuum models, such as the phase

eld model. Themethod is basedon alocal averagingof

the variationof aVoronoitessellationof the atomic

posi-tionsfromtheVoronoitessellationofaperfectcrystal(the

Wigner-Seitz cell). The coarse graining method is

invari-anttocoordinateframerotation. Themethodisillustrated

withasimpletwo-dimensionalexamplein Figure3.

-6

-4

-2

0

2

4

6

x(

σ)

0.92

0.94

0.96

0.98

1.00

1.02

η

η Profile at (x,3) for 0.1σ Mesh

Boundary

Signature

Figure 3 Illustration of coarse-graining of structural

infor-mation in two-dimensions. Data from a molecular dynamics

simulation in the form of (x;y)-coordinates is used as the basis

for a Voronoi tessellation. Each tessellation contains information

about the localized departures from perfect crystallinity. A local

averaging on geometric aspects of the tessellations results in a

characteristic signature of the grain boundary in the molecular

dynamicssimulation.

The method is directly applicable to an averaging of

three-dimensional data (Figure 4). Calculatedresults

in-dicate that acontinuous structuralparameteris obtained

that has grain boundary characteristics similar to phase

eld models of grain boundaries. Comparisons to other

coarse-grainingmeasuresofstructurearediscussedaswell

asapplicationstoexperimentaldatasets. Apaperonthis

workhasbeensubmitted[4].

IV. Structure Dependence of Optical Band

Gaps inPhotonic Crystals

Theuseofstructuredmicro-compositesofmaterialswith

dielectric contrast is emergingas a viablemethod of

pro-ducingopticalmaterialswithtunableopticalmaterials. In

particular,photoniccrystallaminateswithlargedielectric

contrasthavebeenshowntohaveopticalstatesthatadmit

nopropagation|i.e.,photonicbandgaps[5]. Such

materi-alsareomnidirectionalre ectorsforradiationwithenergy

within thephotonicbandgaps.

Thedesign ofnew photoniccrystals withspeci c

prop-ertieswilldependontoolsthat cancorrelatethephotonic

band structure with the microcomposite architecture, an

understandingofhowstructuraldefectswilla ectthe

pho-tonic bandstructure,andonprocessingtechniquesto

cre-ate architectures that have been determined to have

ad-0

10

20

30

z (Å)

0.92

0.94

0.96

0.98

1.00

η

cube r=1

sphere r=1

cube r=2

sphere r=2

η Profile at (2,2,z) for 0.25Å Mesh

Figure 4 Example of structural coarse-graining method

ap-pliedtoamoleculardynamicssimulationofa5grainboundaryin

silicon. Thecoarse-grainedmeasureiscomparabletothestructural

predictionsfromthephase eldmodel.

We havebeeninvestigating numericalmethods of

solv-ing Maxwell's equations that can be eÆciently applied to

photoniccompositesforpredictivecorrelationbetween

mi-crostructureandphotonicproperties.

FourierorBlochwavemethodsareveryeÆcientfor

cal-culatingbandstructureinin nitelyandperfectlyperiodic

structures. In simple nite one-dimensionalstructures, it

ispossibletoformulatetheopticalpropagationwith

trans-fer matrix methods where each matrix is correlated with

the opticalproperties of each material. The matricesare

coupledthoughtheirproximatespatialdomains. Wehave

extended this transfer matrix method to materials with

anisotropicdielectricpropertiesand haveinvestigated the

numerical convergence of the transfer matrix method to

the Fouriersolution with the number of layers in a

pho-toniclaminate.

Resultsthat illustrate the e ect ofanisotropyare

illus-tratedinFigures5and6.

For the cases that have been investigated, the

trans-fer matrix method convergesto within 1% of the Fourier

method after about ten layers. This indicates that nite

stacksapproximatein nitematerials.

Apublicationisbeingpreparedontheresultspresented

abovebytheFourierandtransfermatrixmethod[6].

Photonicstructuresthatarenotperfectlyperiodicor

-nite cannot be modelled easily with the Fourier method

(4)

architec-8

10

12

14

16

18

0.2

0.4

0.6

0.8

8 10 12 14 16 18 0.2 0.4 0.6 0.8 1

λ (

µm)

6

8

10

12

14

16

18

0.2

0.4

0.6

0.8

8 10 12 14 16 18 0.2 0.4 0.6 0.8 1

R

M

R

E

λ (µm)

6

8

10

12

14

16

18

0.2

0.4

0.6

.8

8 10 12 14 16 18 0.2 0.4 0.6 0.8 1

R

M

R

E

λ

m)

80°

45°

εa

εb

wa

wb

Figure 5 Illustration of the transfer matrix method applied

to a photonic stack for the isotropic case. Each plot shows for

eachpolarization(electric eldtransversetopropagationdirection,

TE; magnetic eld transverse, TM) the calculated re ectivity as

a function of the incidentplanewaveangle. Eachof the cubesto

the left of illustrated photonic stack is oriented to be parallel to

the propagation direction; the cross-hatched region indicates the

wavelengths at which full re ectivity exists for that propagation

direction. For omnidirectionalre ectivity, aband gap (re ectivity

equal to unity) must exist for all propagation directions. The

calculation is obtained for thirty layers with dielectric constants



1

= 21:16o(o isthe permittivityofvacuum), 

2

=2:56o with

thicknessesh1=0:1mandh2=1:6m.

Inthese cases, Maxwell's equationscan besolvedona

-nite element mesh with properties that are isomorphicto

photonicmedia.

Wehavedevelopeda nite elementmethodthat canbe

applied to arbitraryphotonic composites and have

calcu-lated thephotonicbandgaps in triplyperiodic

bicontinu-ouscompositewithinterfacesofuniformcurvaturesuchas

thosefoundin blockcopolymers[7].

Additionally, itwill beimportantto understandthe

ef-fectofdefects onphotonicproperties. Figure 7illustrates

a nite elementresult applied to a nite photoniccrystal

composed ofa square latticeof cylindrical rods that

pos-sess dielectric largerdielectric constant than themedium

in which itisembedded.

We are currently working on methods of using

image-basedmeshingtechniques tofacilitaterapidassessmentof

photonicarchitectures.

V. Microstructural Effectsin Battery Design

Themacroscopicresponseofabatteryandthusitsvalue

depends of the transport of charged species within the

microstructures of the battery components.

Tradition-ally,battery designinvolvesacompromisebetweenpower

andenergycapacity|theneedforrapidtransportofionic

6

8

10

12

14

16

18

0.2

0.4

0.6

.8

8 10 12 14 16 18 0.2 0.4 0.6 0.8 1

8

10

12

14

16

18

0.2

0.4

0.6

0.8

8 10 12 14 16 18 0.2 0.4 0.6 0.8 1

6

8

10

12

14

16

18

0.2

0.4

0.6

0.8

8 10 12 14 16 18 0.2 0.4 0.6 0.8 1

λ

m)

R

M

R

E

λ (µm)

R

M

R

E

λ

m)

80°

45°

wa

wb

ε

11

a

ε

22

a

ε

11

b

ε

22

b

Figure 6 Illustration of the transfer matrix method applied

to a photonic stack for the case of anisotropic materials. The

calculation is obtained for thirty layers with dielectric constants

 11 1 = 21:16o,  22 1 = 9:00o,  33 1 = 21:16o, and  11 2 = 2:56o,  22 2 = 2:56 o , 33 2 =2:56 o

, andwiththicknesses h

1

=0:1mand

h

2

=1:6m. Inthiscase,anisotropyreducestherangeofre ective

wavelengths which isconsistent with the reduced contrast inthe

22-directioncomparedtotheresultsinFig.5.

storageofthoseionsforenergycapacity.

Thecurrentparadigmforunderstandingthecoupled

ef-fectsof material transportand thetime-dependent

devel-opmentofavoltagepotentialinabatteryisderivedfroma

mean- eldrepresentationofamicrostructure.Questionsas

to whetheranoptimizedmicrostructurefortheparticular

demands ofdevice exists, andwhether sucha

microstruc-turecanbedesignedwilldependonadetailed

understand-ingofmicrostructurale ectsinbatteries.

Mean eld calculations cannot capture potentially

im-portant e ects of localized electric shielding orstress

de-velopment duringuse and re-chargingcyclesin abattery.

Wehavedevelopedamethod that usesmicroscopic

infor-mation and fundamental material properties to calculate

themacroscopic response ofelectro-activedevices such as

re-chargeablelithium ionbatteries. An illustrationof the

microstructuralmodellingforalithiumionbatteryappears

inFigure 8.

In the case of re-chargeable lithium ion batteries, the

local electronic elds are coupled to transport properties

in themicrostructuresoftheelectrolyte,thecathode,and

the anode. Microstructural e ects on the charging and

discharging behavior of batteries are determined from a

similarmicrostructuralconstruction. Initialresultsonthe

e ects of particle volume fraction, particle size

distribu-tion and galvanostatic discharge rate on the macroscopic

powerandenergydensityofthesystemaresummarizedin

(5)

Figure 7 Illustration of the amplitude of an in incident

plane wave on a nite photonic crystal containing an extended

defect. Thismethodwillbeusedtostudythewaveguideproperties

ofengineeredphotonicdefects.

particlesthatareupstream(towardstheanodeside)ofthe

battery have a shielding e ect on particles that are

fur-ther from the lithium source. This shielding e ect limits

the powercapacityof the battery fora xed energy

den-sity. For microstructures that have the same fraction of

particulate cathodic phase, the power capacity should be

enhancedastheshieldinge ectisreduced. Thesimulation

for the regular array of particles illustrates how reduced

shielding may enablethe production ofbatteries that

ex-ceed the properties predictedby empirical correlationsof

standardbatteries.

It maybepossibleto usethese microstructural

simula-tionstodevelopadditionalmicrostructuraldesignelements

suchasgradedparticlesizes orhierarchicalstructures.

A paper reporting the results of these microstructural

electrochemicaltransportsimulationsisinpreparation[8].

VI. Summary

Microstructural computationsare complicated notonly

because many physical phenomena are coupled, but also

becausethecouplingdependsonthecomplexspatial

corre-lations betweencrystallography,materialsproperties,and

defects thatcompriseamicrostructure.

Becausemicrostructuraldesignisapotentiallypowerful

meanstooptimizematerialsforuseindevices,thepotential

impactofmicrostructuralmodellingjusti esthe

computa-tional diÆcultiesthatmaybeencountered.

The simulations described in this report illustrate the

anode

cathode

separator

resistive load

I

o

−e

composite cathode

separator

I

o

+Li

lithium foil

Figure 8 Illustration of microstructural modeling of the

electro-active components of a lithiumion battery. The battery

iscomposed ofa lithium foil that actsas a sourceof lithiumions

at highchemicalpotential. Theseparatorise ectivelyan osmotic

membraneforlithiumionsthathas poorconductivityofelectrons.

Thecathodemicrostructureconsistsofamicrostructureofparticles

that actassinks forthe lithium ions. The gureon the leftisan

example representation of the cathode particulate microstructure

usedinacalculationofthecoupledchemicalandelectricaltransport

equationsintherepresentativemicrostructure.

Energy Density

Power Density

×

Figure 9 Illustration of the e ect of microstructure on

battery performance. With averaged microstructure, battery

performance istypically represented by the so-called Ragone plot

that empirically correlates the mitigating e ect of power density

on energy storage densityfor batteries. Theinset microstructures

aretheresultsofsimulationsofthe electrochemicalresponsewhere

yellowindicatesalargeconcentrationoflithiumionsduringbattery

usage.

References

[1] R.EdwinGarcia, W.CraigCarter,andStephen Langer, \The

e ectoftextureonthemacroscopicpropertiesofpolycrystalline

ferroelectrics. part 1: Formulationand numerical

implementa-tion,"inpreparationforJ.Amer.Ceram.Soc.

[2] R.EdwinGarcia, W.CraigCarter,andStephen Langer, \The

e ectoftextureonthemacroscopicpropertiesofpolycrystalline

ferroelectrics.part2: ApplicationtoBaTiO

3

(6)

modelof grainboundaries," Physica D, vol.140,pp. 141{150,

2000.

[4] C.M.BishopandW.C.Carter,\Relatingatomisticgrain

bound-arysimulationresultstothephase- eldmodel," submittedtoJ.

Comp.Mater.Sci.,2001.

[5] FinkY.etal., \Adielectricomnidirectionalre ector," Science,

vol.282,pp.1679{1682,1998.

[6] M.MaldovanandW.C.Carter, \Calculationofphotonicband

gapsindoublyperiodiccompositesofanistropicmedia,"in

prepa-ration.

[7] M. Maldovan, A. Urbas, N. Yufa, W. C. Carter, and E. L.

Thomas, \Abicontinuous networkphotonic crystal ina block

copolymersystem," SubmittingtoPhys.Rev.B.

[8] R. E.Garc 

ia, C.M. Bishop, W.C.Carter Y.-M.Chiang, and

S.A.Langer,\Modellingofmicrostructurale ectsincoupled

ir-reversiblethermodynamicsystemswithapplicationsto

Figure

Figure 1 Illustration of the eect of microstructure on a
Figure 3 Illustration of coarse-graining of structural infor-
Figure 5 Illustration of the transfer matrix method applied
Figure 8 Illustration of microstructural modeling of the

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