HAL Id: jpa-00229604
https://hal.archives-ouvertes.fr/jpa-00229604
Submitted on 1 Jan 1989
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PROPERTIES OF SnO2 : F FILMS PREPARED BY APCVD
F. Zong, S. Han, S. Li
To cite this version:
F. Zong, S. Han, S. Li. PROPERTIES OF SnO2 : F FILMS PREPARED BY APCVD. Journal de
Physique Colloques, 1989, 50 (C5), pp.C5-613-C5-613. �10.1051/jphyscol:1989572�. �jpa-00229604�
JOURNAL DE PHYSIQUE
Colloque C5, suppl6ment au n05, Tome 50, mai 1989
PROPERTIES OF SnO, ; F FILMS PREPARED BY APCVD
F. ZONG, S. HAN and S. L1
Department of P h y s i c s , Shandong U n i v e r s i t y , J i n a n , P . R . China
Abstract
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This paper presents the electrical, optical properties and structural properties of undaped and F-doped tin-oxide films prepared by atmospheric pressure chemical vapour deposition(APCVD) from the anhydrous stannic chloride and water reaction system doped with freon.Resistivity as low as 2 . 0 x 1 & a n with high optical transmission (the average total transmission within the limits of visible tight is over 90%) have been obtained in F-doped tin oxide films. The figure of merit Q=RshlnT of these films is the highest among the results reported on doped tin oxide films known t o the author. The influences of the main controlling deposition parameters o n electical, optical properties and structural characteristics o f undoped and F-doped tin oxide films have been studied.Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1989572