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Submitted on 1 Jan 1978
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KONDO EFFECT IN InSb AND GaAs DOPED WITH
NONMAGNETIC IMPURITIES (Te)
N. Brandt, E. Joon, S. Chudinov
To cite this version:
JOURNAL DE PHYSIQUB Colloque C6, supplément au «° 8, Tome 39, août 1978, page C6-850
KONDO EFFECT IN InSb AND GaAs DOPED WITH NONMAGNETIC IMPURITIES ( T e ) N.B. Brandt, E.R. Joon and S.M. Chudinov
Low Temperature Laboratory, Physios Department, Moscow State University, USSR.
Résumé.- On présente les résultats de recherches sur les phénomènes galvanomagnêtiques dans les semiconducteurs dégénérés InSb + Te et GaAs + Te. Nous avons trouvé des ano-malies induites, à notre avis, par les moments magnétiques localisés sur les impuretés de Te.
Abstract.- Results of galvanomagnetic studies in degenerate semiconductors : InSb + Te and GaAs + Te are presented. Anomalies, which are caused, in our view, by localized magnetic moments associated with Te impurity, have been found.
Galvanomagnetic effects in heavily doped monocrystals of InSb and GaAs with conduction band electron concentration n = (0.7 -t 4) 101 8 cm- 3
have been studied.
1. Anomalies were observed in temperature dependence of resistivity p : a minimum p(T) for a certain value T = T . /I/ and logarithmic
in-min
crease of p with decreasing temperature T (figure 1). . AJ A. A X X X ^ Af t
***
\
* " •°
„ \ *
* + • • x * * * * * *•
J-2% + + °°\ • "x • I v + "S.^?• >—i i 1 1 1 i—i i I ^ I <i • 1 1 1 • ' „
Z 6 10 *iQ to ZOO
Fig. 1 : Temperature dependence of resistivity for samples of InSb with n = 8.7xl017cm-3 (+), 9.4xl017cnr3 (o) and GaAs with n = 1.13xl0l8cm-3
(x>, 1 .34xl018cm-3(A). Kondo temperature for InSb
+ Te : T k1 = 18 * 20 K and GaAs : I k2 = 6 0 + 65 K.
The characteristic temperature, analogous to Kondo temperature in dilute alloys, is T. l = 18 + 20 K
for InSb + Te and T.2 = 60 * 65 K for GaAs + Te. With increasing concentration of current carriers,
the anomalous part of r e s i s t a n c e in GaAs : „ (2K) - pCTmin)
P P (2K)
falls inversely with n; moreover the minimum p is shifted towards lower temperature side according to the law : T . . n = const,
m m
2. In samples of GaAs, a considerable modu-lation of amplitude in Shubnikov-de Haas (S d H) oscillations is observed, while in the case of InSb + Te with n = (8 + 11)1017 cm- 3, beatings and
commutational effect are observed 12/. The latter is associated with different positions of nodal points on magnetic field scale depending on the sign of H /3,4/. At temperatures in the vicinity of T, , a doubling of oscillation frequency takes place in samples InSb + Te for interval n =
(8 * ll)1017cm-3. This anomaly disappears on
fur-ther increasing the temperature T>50 K (figure 2 ) .
3. During measurements of Hall effect in GaAs+Te, an anomalous increase in Hall voltage U by 3 + 4 % is observed on increasing the sample
n
temperature. To a first approximation, the depen-dence AU„ (T) is proportional to T log T in the
xi
interval 4.2<T<T . , a further increase in
tempe-min' r
rature (T>T . ) up to 300 K does not result in a min
change in U„.
4. For samples GaAs + Te with n<1.6xl018
cm"3, a decrease in resistance is observed with
increasing H /l/, proportional to log H in the interval 0.5<H<8 kOe. In the region H>15 kOe a normal Lorenzian rise Apr = <* H2 dominates.
5. Anomalous dependence of p(T) in semi- conductors has been observed earlier also : in weakly doped samples of InSb / 5 / and PbS 161. From the data of reference 151, it follows that for InSb+Te with n<10~~crn-~ Tk c 10K and T rises k with increasing n.
Fig. 2 : Longitudinal magnetoresistance oscilla- tions ap,,(H) in sample InSb + Te with n = 9 . 4 ~ 10~~cm-~,'~recorded for T = 4.2 K (I), 12 K (2), 22 K (3), 26 K (4) and 50
K
(5).6. Semiconductors doped with nonmagnetic impurities show anomalies similar to those obser- ved in normal metals doped with paramagnetic impu- rities (Kondo effect) 171. In accordance with the above analogy, it may be assumed that the observed
References
/I/ Andrianov, D.G., Brandt, N.B., Joon, E.R., Fistul,
V.I.,
Chudinov, S.M., Fisika i Tekhnika poluprovodnikov5
(1971) 2200./2/ Andrianov, D.G., Brandt, N.B., Joon, E.R., Fistul,
V.I.,
Chudinov, S.M., ZhETF pisma17
(1973) 494.
/3/ Abrikosov, A.A. ZhETF
3
(1973) 814./ 4 / Abrikosov, A.A., Brandt, N.B., Joon, E.R., Chudinov, S.M., Proc. Int. Conf. Magnetism, Moscow
5
(1973) 468./5/ Tanaka, S., Takita, K., Uchinokura, K., Proc. 1 1 th Int. Conf. Low Temp. Phys. St.Andrews (1968) 1292.
161
Chan, Y.C., Finlayson, D.M., Johnson, I.A., Proc. 12th Int. Conf. Low Temp. Phys. Kyoto(1970) 561.
171 Rizzuto C., Rep. Prog. Phys.,
