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Submitted on 1 Jan 1988
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Simple pairing picture of (2 x 1) instability and reconstruction of silicon surfaces
Mojmír Tomášek
To cite this version:
Mojmír Tomášek. Simple pairing picture of (2 x 1) instability and reconstruction of silicon sur-
faces. Journal de Physique, 1988, 49 (12), pp.2071-2075. �10.1051/jphys:0198800490120207100�. �jpa-
00210888�
Simple pairing picture of (2 x 1) instability and reconstruction of silicon surfaces
Mojmír Tomá0161ek
Ústav fyzíkální chemie a elektrochemie J. Heyrovského, 010Ceskoslovenská akademie v~d, 121 38
Praha 2, Máchova 7, 010Ceskoslovensko
(Reçu le 5 janvier 1988, révisé le 26 juillet, accept,6 le 24 août 1988)
Résumé.
2014Les reconstructions (2 x 1) de trois surfaces typiques du silicium ((111), (110), et (100)) sont
décrites à l’aide d’un modèle simple d’appariement reliant la saturation mutuelle d’états de surface de Shockley (liaisons pendantes) au niveau de Fermi EF à l’instabilité géométrique des surfaces idéales (1 1). Le
mécanisme mis en jeu fait intervenir le couplage électron-phonon (supposé plus fort en surface que dans le
volume) entre états de surface et les modes de déformation ~. Il est basé sur deux principes importants : le
théorème d’appariement reliant les fonctions d’ondes et les énergies des états de surfaces différant d’un vecteur d’onde
03BAet la règle de sélection qui choisit les modes de reconstruction permis. Le formalisme utilisé
s’applique également à l’interaction des électrons avec d’autres champs de bosons (excitons, plasmons, paramagnons).
Abstract.
2014The (2 x 1) reconstructions of three typical silicon surfaces, namely (111), (110) and (100), are
described within a very simple pairing picture, relating mutual saturation of Shockley surface states (dangling bonds) from the Fermi energy EF to the geometrical instability of ideal (1 x 1) surfaces. The mechanism involved is the electron-phonon coupling (assumed to be stronger at the surface than in the bulk) between
surface states and the deformation modes ~ and contains two other important tools : the pairing theorem relating wave functions and energies of surface states differing by a certain wave vector 03BA, and the selection rule picking out reconstruction modes allowed by the present theory. The formalism utilized is applicable also
to the interaction of electrons with other boson fields (excitons, plasmons, paramagnons).
Classification
Physics Abstracts
63.20K
-73.20
-68.20
1. Introduction.
The present very simple ideas try to approach
surface reconstruction of crystals exhibiting a certain component of covalent bonding, which have
Shockley surface states (SS) around the Fermi energy EF. Surfaces of diamond-like semiconductors,
in particular silicon, are classical examples. The
ideas may complement somehow other investigations
and contribute to the elucidation of the role of SS in surface reconstructions. The importance of the elec-
tron-phonon interaction between SS and lattice deformations is assumed, and as the basic ingredient
the electron (CDW or SDW) and lattice (Peierls or pseudo Jahn-Teller like) instability theory [1, 2] is
used.
The (2 x 1) instability is discussed by using the
« pairing theorem » [1, 2] valid throughout the
whole (2 x 1) surface Brillouin zone (SBZ) of sur-
face (and bulk) electronic states of Si (111), (110)
and (100) surfaces. The main tool of the analysis is
the (Umklapp) electron-phonon matrix element wkQ
=(k + Q [ w k) which operates as a symmetry
based selection rule. Here I k) is the Bloch function and w is the electron-phonon (deformation) poten- tial exhibiting same symmetry as the deformation mode q [3-5]. For simplicity reasons, the case of a single SS band, appearing on the Si (111) 1 x 1
surface is presented in section 3. New results are
found mainly in sections 2 and 4 showing how the
selection rule predicts the allowed reconstruction modes, particularly for the not yet theoretically investigated (110) surface. Central aim is to demon-
strate how trivially one can describe the
«pairing
»of dangling bonds and the ensuing change of surface geometry. Old well known facts are reworded in a
different language sufficiently flexible to deal with
some of the presently popular examples of surface
reconstruction.
Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:0198800490120207100
2072
2. Pairing theorem and selection rule
The symmetry based selection rule, which by means
of w decides whether a reconstruction mode q is
allowed or forbidden, is based on the existence of the pairing theorem. This governs symmetry proper- ties of the wave functions of Shockley surface states (SS). The theorem holds due to the fact that the three investigated surfaces are alternant systems, i.e.
each of their atoms falls into one of two interpenet- rating sublattices A and B (there are two sublattice pairs on the (110) surface). For such systems [1, 2],
any two states in the SS band differing by a certain
k
=K (in our case K
=Q) form pairs of bonding and antibonding (with respect to A and B) states. Since
this pairing runs through the whole surface Brillouin zone, it signals that local (chemical) effects are at
work on the surface. It strongly differs from the
usual nesting mechanism occurring on the Fermi
surface only. One easily checks that I k) = 9 A + 9 B
and Ik + Q) " 9A - (PB hold and hence, wkQ can be
non-zero only if w is antisymmetric in A, B, i.e.
W -- wA - wB. Here gc and wc are the Bloch func- tion and the deformation potentials, respectively, of
the sublattice C. This selection rule is in apparent analogy to the pseudo J. T. theory, where different
parity wave functions can couple only via an odd parity deformation
-a process stabilizing total
electronic energy. Of course, the polarization vector
of the antisymmetric reconstruction mode q can be directed either perpendicularly (buckled mode) or parallely to the surface (in-plane mode). The latter
can be either longitudinal or transversal with respect
to Q. It is in particular the mode longitudinal with
respect to pronounced bonds on the surface (or having an important longitudinal component) which
can be expected to bring a sizeable contribution to the electronic stabilization energy (see also [6]).
In the following, figures 1, 2 of [7] are referred to display the geometry, SBZ and SS of the three ideal Si surfaces. The high symmetry points of the SBZ of
(2 x 1) surfaces are labelled analogously to figure 8
of [8] and figure 2 of [9]. It is interesting to notice
that for the (2 x 1) structures of the investigated surfaces, a degeneracy occurs between the symmetric
and antisymmetric ( folded) SS branches along certain
SBZ directions which read : J’ - K - J for the
(111), J’ - K - leX) for the (110) and J’ - K for
the (100) surface, respectively. Along these direc- tions, a pair of equivalent SS states I k) :t k + Q )
can be formed, the wave functions 9 A and 9 B of which being exclusively localized on either the A or
B sublattice, respectively (for a recent experiment apparently confirming this fact in a particular case :
see [10, 11]). These states are non-bonding with respect to the A-B interaction and show the unsatu- rated character of the corresponding dangling bonds [12]. Chemical saturation (pairing) of the latter
contributes to the energetics of the reconstruction process.
Let us enumerate those Q of the investigated
surfaces for which the selection rule is fulfilled, leading to a (2 x 1) reconstruction of the original (1 x 1) surface. For the (111) surface it holds that
Q = 1/2 G(112)
=2 w /3 a (112), where G is the
reciprocal vector in the (112) direction of the
(1 x 1) surface, and similarly for (110) and (100)
surfaces one has Q = 1/2 G (001 ) = ’IT/a(001) and
Q = 1/2 G (011 ) = 7r la (011 ), respectively. In the
surface layer to which we limit our considerations here, the Pandey iT-bonded chain model [8] of the (111) surface reconstruction corresponds to our longitudinal mode. The same is true for the (2 x 1)
reconstruction of the (110) and the symmetric dimer
of the (100) surfaces, respectively. The correspond- ing asymmetric dimer is a combination of the in-
plane longitudinal and the buckled modes. Of
course, the Pandey model [8] is typical for its large
surface deformation amplitude and hence involves subsurface layers into the game. This is in line with the fact that, contrary to the remaining two surfaces,
SS on the (111) surface are highly delocalized into the bulk. Since the pairing theorem operates in the bulk as well, there might exist a special fringe effect
in chemical bonding (force constants K = w Q) help-
ing the subsurface layer(s) to adjust its (their)
geometry more easily to the reconstruction in the surface layer (cf. also [6]). Notice, that the in-plane longitudinal mode Q
=2 rr /3 a (112 ) of the (111)
surface has opposite phase in the subsurface layer [8] ; it might be that geometrical stress, steric or
mismatch effects are relaxed in this way. Naturally,
there are two SS bands on (110) and (100) surfaces
which cause that wkQ has interband matrix elements, being now a 2 x 2 matrix.
Recently, the theory of this and the following
section was successfully used for the W(001 ) surface [2]. The pairing theorem and the selection rule
picked out the experimentally found zig-zag (Ms :
Q = 1/2 G(110) " (110 )) reconstruction mode
a
there. In principle, the alternative X3 (Q
=1/2 G(lOO) = ’IT la(100» mode with similar local
environment would be also possible. However, band
energy estimates based on simple considerations
using the 4th moment of the local density of states preferred the R5 mode. As with the silicon surfaces,
the unsaturated (non-bonding) character of the
degenerate SS branches occurs here as well.
The theorem and the rule (partly corroborated by [10, 11]) represent also adequate tools to deal with
the Peierls transition in infinite linear chains since
these can be formally divided into two subchains A
and B, being typical alternant systems. Hence, one
finds a rewording of the Peierls transition theory.
Originally of course, both tools have been introduced
to deal with genuinely 3-dimensional alternant sys- tems. Due to its Peierls-like character, our recon-
struction model can exhibit a whole spectrum of soliton (anti-phase boundary or domain wall) effects
on the investigated surfaces, this time in two dimen- sions.
3. Formal mathematical framework
Let us sketch briefly some simple mathematics behind our ideas, without claiming much accuracy in the notation. One starts with two coupled Hamilto- nians, the electron one He and the phonon one
Hp of the self-consistent (Hartree-Fock like, mean- field) approach to the electron-phonon interaction
where C describe electron and b phonon operators.
When more than one (say n) SS bands are present, the summation over k is to be complemented by that
over the band index i. (1a) then corresponds to a 2 n- component theory (analogous to [13]) with the key quantities (like the correlator (3)) changed from
scalars to n x n matrices.
Obviously, the exact solution of the phonon problem is trivial since the latter represents the displaced harmonic oscillator problem. By putting
the expectation values of the commutators
[bq, Hp]) and [b: q’ Hp]> equal to zero, one gets
the phonon shifts
which appear because terms linear in b are contained in (1b). Completing the squares in that equation (i.e.
diagonalizing (1b)) gives
with the stabilizing «polaron energy» Hpol
=L Cùq (bq) (bq) resulting from the displacement of
q