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HAL Id: jpa-00210888

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Submitted on 1 Jan 1988

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Simple pairing picture of (2 x 1) instability and reconstruction of silicon surfaces

Mojmír Tomášek

To cite this version:

Mojmír Tomášek. Simple pairing picture of (2 x 1) instability and reconstruction of silicon sur-

faces. Journal de Physique, 1988, 49 (12), pp.2071-2075. �10.1051/jphys:0198800490120207100�. �jpa-

00210888�

(2)

Simple pairing picture of (2 x 1) instability and reconstruction of silicon surfaces

Mojmír Tomá0161ek

Ústav fyzíkální chemie a elektrochemie J. Heyrovského, 010Ceskoslovenská akademie v~d, 121 38

Praha 2, Máchova 7, 010Ceskoslovensko

(Reçu le 5 janvier 1988, révisé le 26 juillet, accept,6 le 24 août 1988)

Résumé.

2014

Les reconstructions (2 x 1) de trois surfaces typiques du silicium ((111), (110), et (100)) sont

décrites à l’aide d’un modèle simple d’appariement reliant la saturation mutuelle d’états de surface de Shockley (liaisons pendantes) au niveau de Fermi EF à l’instabilité géométrique des surfaces idéales (1 1). Le

mécanisme mis en jeu fait intervenir le couplage électron-phonon (supposé plus fort en surface que dans le

volume) entre états de surface et les modes de déformation ~. Il est basé sur deux principes importants : le

théorème d’appariement reliant les fonctions d’ondes et les énergies des états de surfaces différant d’un vecteur d’onde

03BA

et la règle de sélection qui choisit les modes de reconstruction permis. Le formalisme utilisé

s’applique également à l’interaction des électrons avec d’autres champs de bosons (excitons, plasmons, paramagnons).

Abstract.

2014

The (2 x 1) reconstructions of three typical silicon surfaces, namely (111), (110) and (100), are

described within a very simple pairing picture, relating mutual saturation of Shockley surface states (dangling bonds) from the Fermi energy EF to the geometrical instability of ideal (1 x 1) surfaces. The mechanism involved is the electron-phonon coupling (assumed to be stronger at the surface than in the bulk) between

surface states and the deformation modes ~ and contains two other important tools : the pairing theorem relating wave functions and energies of surface states differing by a certain wave vector 03BA, and the selection rule picking out reconstruction modes allowed by the present theory. The formalism utilized is applicable also

to the interaction of electrons with other boson fields (excitons, plasmons, paramagnons).

Classification

Physics Abstracts

63.20K

-

73.20

-

68.20

1. Introduction.

The present very simple ideas try to approach

surface reconstruction of crystals exhibiting a certain component of covalent bonding, which have

Shockley surface states (SS) around the Fermi energy EF. Surfaces of diamond-like semiconductors,

in particular silicon, are classical examples. The

ideas may complement somehow other investigations

and contribute to the elucidation of the role of SS in surface reconstructions. The importance of the elec-

tron-phonon interaction between SS and lattice deformations is assumed, and as the basic ingredient

the electron (CDW or SDW) and lattice (Peierls or pseudo Jahn-Teller like) instability theory [1, 2] is

used.

The (2 x 1) instability is discussed by using the

« pairing theorem » [1, 2] valid throughout the

whole (2 x 1) surface Brillouin zone (SBZ) of sur-

face (and bulk) electronic states of Si (111), (110)

and (100) surfaces. The main tool of the analysis is

the (Umklapp) electron-phonon matrix element wkQ

=

(k + Q [ w k) which operates as a symmetry

based selection rule. Here I k) is the Bloch function and w is the electron-phonon (deformation) poten- tial exhibiting same symmetry as the deformation mode q [3-5]. For simplicity reasons, the case of a single SS band, appearing on the Si (111) 1 x 1

surface is presented in section 3. New results are

found mainly in sections 2 and 4 showing how the

selection rule predicts the allowed reconstruction modes, particularly for the not yet theoretically investigated (110) surface. Central aim is to demon-

strate how trivially one can describe the

«

pairing

»

of dangling bonds and the ensuing change of surface geometry. Old well known facts are reworded in a

different language sufficiently flexible to deal with

some of the presently popular examples of surface

reconstruction.

Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphys:0198800490120207100

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2072

2. Pairing theorem and selection rule

The symmetry based selection rule, which by means

of w decides whether a reconstruction mode q is

allowed or forbidden, is based on the existence of the pairing theorem. This governs symmetry proper- ties of the wave functions of Shockley surface states (SS). The theorem holds due to the fact that the three investigated surfaces are alternant systems, i.e.

each of their atoms falls into one of two interpenet- rating sublattices A and B (there are two sublattice pairs on the (110) surface). For such systems [1, 2],

any two states in the SS band differing by a certain

k

=

K (in our case K

=

Q) form pairs of bonding and antibonding (with respect to A and B) states. Since

this pairing runs through the whole surface Brillouin zone, it signals that local (chemical) effects are at

work on the surface. It strongly differs from the

usual nesting mechanism occurring on the Fermi

surface only. One easily checks that I k) = 9 A + 9 B

and Ik + Q) " 9A - (PB hold and hence, wkQ can be

non-zero only if w is antisymmetric in A, B, i.e.

W -- wA - wB. Here gc and wc are the Bloch func- tion and the deformation potentials, respectively, of

the sublattice C. This selection rule is in apparent analogy to the pseudo J. T. theory, where different

parity wave functions can couple only via an odd parity deformation

-

a process stabilizing total

electronic energy. Of course, the polarization vector

of the antisymmetric reconstruction mode q can be directed either perpendicularly (buckled mode) or parallely to the surface (in-plane mode). The latter

can be either longitudinal or transversal with respect

to Q. It is in particular the mode longitudinal with

respect to pronounced bonds on the surface (or having an important longitudinal component) which

can be expected to bring a sizeable contribution to the electronic stabilization energy (see also [6]).

In the following, figures 1, 2 of [7] are referred to display the geometry, SBZ and SS of the three ideal Si surfaces. The high symmetry points of the SBZ of

(2 x 1) surfaces are labelled analogously to figure 8

of [8] and figure 2 of [9]. It is interesting to notice

that for the (2 x 1) structures of the investigated surfaces, a degeneracy occurs between the symmetric

and antisymmetric ( folded) SS branches along certain

SBZ directions which read : J’ - K - J for the

(111), J’ - K - leX) for the (110) and J’ - K for

the (100) surface, respectively. Along these direc- tions, a pair of equivalent SS states I k) :t k + Q )

can be formed, the wave functions 9 A and 9 B of which being exclusively localized on either the A or

B sublattice, respectively (for a recent experiment apparently confirming this fact in a particular case :

see [10, 11]). These states are non-bonding with respect to the A-B interaction and show the unsatu- rated character of the corresponding dangling bonds [12]. Chemical saturation (pairing) of the latter

contributes to the energetics of the reconstruction process.

Let us enumerate those Q of the investigated

surfaces for which the selection rule is fulfilled, leading to a (2 x 1) reconstruction of the original (1 x 1) surface. For the (111) surface it holds that

Q = 1/2 G(112)

=

2 w /3 a (112), where G is the

reciprocal vector in the (112) direction of the

(1 x 1) surface, and similarly for (110) and (100)

surfaces one has Q = 1/2 G (001 ) = ’IT/a(001) and

Q = 1/2 G (011 ) = 7r la (011 ), respectively. In the

surface layer to which we limit our considerations here, the Pandey iT-bonded chain model [8] of the (111) surface reconstruction corresponds to our longitudinal mode. The same is true for the (2 x 1)

reconstruction of the (110) and the symmetric dimer

of the (100) surfaces, respectively. The correspond- ing asymmetric dimer is a combination of the in-

plane longitudinal and the buckled modes. Of

course, the Pandey model [8] is typical for its large

surface deformation amplitude and hence involves subsurface layers into the game. This is in line with the fact that, contrary to the remaining two surfaces,

SS on the (111) surface are highly delocalized into the bulk. Since the pairing theorem operates in the bulk as well, there might exist a special fringe effect

in chemical bonding (force constants K = w Q) help-

ing the subsurface layer(s) to adjust its (their)

geometry more easily to the reconstruction in the surface layer (cf. also [6]). Notice, that the in-plane longitudinal mode Q

=

2 rr /3 a (112 ) of the (111)

surface has opposite phase in the subsurface layer [8] ; it might be that geometrical stress, steric or

mismatch effects are relaxed in this way. Naturally,

there are two SS bands on (110) and (100) surfaces

which cause that wkQ has interband matrix elements, being now a 2 x 2 matrix.

Recently, the theory of this and the following

section was successfully used for the W(001 ) surface [2]. The pairing theorem and the selection rule

picked out the experimentally found zig-zag (Ms :

Q = 1/2 G(110) " (110 )) reconstruction mode

a

there. In principle, the alternative X3 (Q

=

1/2 G(lOO) = ’IT la(100» mode with similar local

environment would be also possible. However, band

energy estimates based on simple considerations

using the 4th moment of the local density of states preferred the R5 mode. As with the silicon surfaces,

the unsaturated (non-bonding) character of the

degenerate SS branches occurs here as well.

The theorem and the rule (partly corroborated by [10, 11]) represent also adequate tools to deal with

the Peierls transition in infinite linear chains since

these can be formally divided into two subchains A

and B, being typical alternant systems. Hence, one

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finds a rewording of the Peierls transition theory.

Originally of course, both tools have been introduced

to deal with genuinely 3-dimensional alternant sys- tems. Due to its Peierls-like character, our recon-

struction model can exhibit a whole spectrum of soliton (anti-phase boundary or domain wall) effects

on the investigated surfaces, this time in two dimen- sions.

3. Formal mathematical framework

Let us sketch briefly some simple mathematics behind our ideas, without claiming much accuracy in the notation. One starts with two coupled Hamilto- nians, the electron one He and the phonon one

Hp of the self-consistent (Hartree-Fock like, mean- field) approach to the electron-phonon interaction

where C describe electron and b phonon operators.

When more than one (say n) SS bands are present, the summation over k is to be complemented by that

over the band index i. (1a) then corresponds to a 2 n- component theory (analogous to [13]) with the key quantities (like the correlator (3)) changed from

scalars to n x n matrices.

Obviously, the exact solution of the phonon problem is trivial since the latter represents the displaced harmonic oscillator problem. By putting

the expectation values of the commutators

[bq, Hp]) and [b: q’ Hp]> equal to zero, one gets

the phonon shifts

which appear because terms linear in b are contained in (1b). Completing the squares in that equation (i.e.

diagonalizing (1b)) gives

with the stabilizing «polaron energy» Hpol

=

L Cùq (bq) (bq) resulting from the displacement of

q

ions to the new structure equilibrium positions.

What determines the final physical picture is the

model in which He is diagonalized. Our qualitative

considerations above suggest the CDW and Peierls transition model in the sense of [1, 2], i.e. a single-

mode (q

=

Q) model. In this model, C t + Q Ck) is

evaluated from (la) exactly following [1] and the

result is

when occupation numbers (Fermi functions) nk(1), nk2) of the new energy levels [1]

are also included to allow for temperature effects.

The self-consistency cycle is closed by denoting

substituting (2) in (5) and inserting (3) in the result.

A homogeneous system of linear equations arises in 8 kQ which has a non-zero solution when

holds. The quantity in square brackets of this BCS like gap equation can be called the phonon self-

energy (polarization operator) 1T (Q, (ù = 0). To get (6) in a form more familiar from BCS theory, one

writes

and assumes exact pairing

Here the notation

and

has been used. Then, the analogy of the final temperature-dependent BCS result follows im-

mediately.

(6) is the instability condition from which the

phase transition temperature Tc is in principle to be

determined. Total energy (adiabatical potential) Etot is approximated as the sum over occupied

energy levels (4) stabilized by Hpol, plus the repulsive phonon part. One finds the softening of w Q (at

T

=

0) by evaluating the 2nd derivative of Etot with

respect to the ion displacements, at the equilibrium positions of the original lattice. Alternatively, by expanding the electronic part in small displacements

q, using (for illustrative purposes only !) similar

approximations [14] as in BCS theory and assuming

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2074

that wkQ = wQ holds, one can calculate the recon- struction free energy change

where ns (E ) is the SS density of states, w is the cut-

off energy and kB is the Boltzmann constant. By writing io-2 Q

=

( a2 å[f /ð’TJ 2),a

=

0 one immediately ob-

tains the renormalized frequency W Q. Equating

r.h.s. of (7) to zero, one could get T,,. However, the approximations made do not grasp correctly the important contributions coming from both the peak

in ns (E ) caused by degenerate SS branches and the

logarithmic (saddle-point) van Hove singularity in-

voked by the two-dimensional character of the

problem. It is worth noticing, that this singularity

resembles the one found recently in the density of

states of high-Tc ceramic superconductors (see e.g.

[16]). Here of course, only electron-phonon matrix

elements of the Umklapp type are dealt with so that in agreement with experiment, structural instability

is preferred to superconductivity.

To get an idea how the above two peaks can

influence the determination of Tc, let us mention shortly the results obtained under simplifying as- sumptions. Full discussion will be given elsewhere [15]. Let us assume that the (flat) degenerate SS

branches contribute into ns(E) a 5-function like

peak of amplitude S and that the width of the

logarithmic singularity is R. Let us further assume

that both peaks lie at EF. Then, the expression to replace the second term in the square brackets of (7)

will consist of two terms, each from its own peak

The emerging pairing mechanism of (2 x 1) silicon

surface reconstructions is related to other pairing phenomena in solids, in particular to the small polaron (negative U or bipolaron) problem [17]. It

can be checked that bq> and Hpol give correct

results in the small polaron limit. Also, by consulting [1] with 8k,j given by s kQ of (5), one finds that in the

present picture, strong electron-phonon coupling

leads to the localization of charge on one of the

sublattices (another electron pairing effect, of the

sort known form the negative U problem [17]). This

effect might be of relevance for the existence of

buckled modes. Especially if local surface symmetry is taken into account properly [3], the present selection rule can also be applied to the problems of

ordered adsorption, adsorption induced reconstruc-

tion, epitaxial growth or surface atom scattering,

’ where instead of the electron an external atom in interaction with surface phonons is considered.

It should not be overlooked that the formalism of this section is equally applicable to other kinds of

bosons (e.g. excitons [1], plasmons, paramagnons)

in interaction with the electrons, the last case leading

to a sort of Heitler-London-Heisenberg coupling.

We expect to be able to exploit these possibilities

elsewhere [15].

4. Discussion.

The generally accepted (2 x 1) reconstruction of the surface layer of Si (111) and (100) surfaces belong to

reconstruction models allowed by the presently

introduced selection rule [4, 10, 11, 18]. As usual recently, buckled modes are excluded by arguing [8]

that in LCAO total energy calculations they result

from an artifact of the method which exaggerates charge transfer between neighbouring surface atoms (however, see [4, 18]).

The (2 x 1) reconstruction of the Si (110) surface

which has not yet been treated in the literature,

deserves attention. The surface layer of the ideal

(110) surface consists of parallel chains of atoms, each chain exhibiting a glide plane symmetry o-g which causes a double degeneracy along the X M direction of the (1 x 1) SBZ [19]. A selection

rule analogous to the present one allows a longitudi-

nal Peierls-like distortion in separate chains which

splits the degeneracy, leading to two separate SS bands. Notice, that analogous transversal displace-

ments of altemant chain atoms are also allowed, however, they do not remove og. They can help to

shift the X-M degenerate states to EF and to optimize the energy gain. The (2 x 1) reconstruction follows then from the selection rule of section 2 and

occurs perpendicularly to the chains. One can im-

agine that it arises from opposite-phase location of the Peierls distortion in neighbouring chains. A very

simple total energy calculation of several reconstruc-

tion modes of the Si (110) surface supporting this

picture, has already been done [5].

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References

[1] TOMÁ0160EK, M., Physica 36 (1967) 420 ; ibid. 39 (1968)

21 ; Phys. Lett. 26A (1968) 374 ; Int. J. Quant.

Chem. 3S (1969) 849.

[2] TOMÁ0160EK, M., in: Phonon Physics, Proc. 2nd Int.

Conf. Phonon Physics, Budapest, August 1985, KOLLAR, J., KROÓ, N., MENYHÁRD, N. and SIKLÓS, T. eds. (World Scientific, Singapore, 1985) p. 673.

[3] TOMÁ0160EK, M. and PICK, 0160., J. Phys. France 45 (1984) Colloque C5-125 ; Surf. Sci. 140 (1984) L279 ; TCM Techn. Rept. (15 January 1985), Cavendish Lab., Cambridge Univ., England ; Physica 132B (1985) 79 ; Czech. J. Phys. B 35 (1985) 768.

[4] TOMÁ0160EK, M. and PICK, 0160., Czech. J. Phys. B 38 (1988) 97.

[5] TOMÁ0160EK, M. and PICK, 0160., J. Phys. France 49 (1988)

99.

[6] HEINE, V. and SAMSON, J. H., J. Phys. F. Met. Phys.

13 (1983) 2155.

[7] IVANOV, I. , MAZUR, A. and POLLMANN, J., Surface

Sci. 92 (1980) 365.

[8] PANDEY, K. C., Physica 117 and 118B (1983) 761.

[9] OLMSTEAD, M. A. and CHADI, D. J., Phys. Rev. B

33 (1986) 8402.

[10] STROSCIO, J. A., FEENSTRA, R. M. and FEIN, A. P., Phys. Rev. Lett. 57 (1986) 2579.

[11] TOMÁ0160EK, M., Czechosl. J. phys. B, to appear.

[12] TOMÁ0160EK, M. and KOUTECKÝ, J., Int. J. Quant.

Chem. 3 (1969) 249.

[13] BALIAN, R. and WERTHAMER, N. R., Phys. Rev. 131 (1963) 553.

[14] KITTEL, Ch., Quantum Theory of Solids (J. Wiley,

New York, 1963) Chap. 8.

[15] TOMÁ0160EK, M., to be published.

[16] FREEMAN, A. J., Yu, J. and Fu, L. L., Phys. Rev. B

36 (1987) 7111.

[17] ANDERSON, P. W., Phys. Rev. Lett. 34 (1975) 953.

[18] POLLMANN, J., KRÜGER, P. and MAZUR, A., J. Vac.

Sci. Technol. B 5 (1987) 945.

[19] HEINE, V., Proc. Roy. Soc. (London) A 331 (1972)

307.

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