HAL Id: jpa-00229584
https://hal.archives-ouvertes.fr/jpa-00229584
Submitted on 1 Jan 1989
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MORPHOLOGICAL ASPECTS OF SILICON
CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE
A. Parretta, A. Camanzi, G. Giunta, V. Adoncecchi, P. Alessandrini, A.
Mazzarano
To cite this version:
A. Parretta, A. Camanzi, G. Giunta, V. Adoncecchi, P. Alessandrini, et al.. MORPHOLOGICAL
ASPECTS OF SILICON CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE. Journal
de Physique Colloques, 1989, 50 (C5), pp.C5-434-C5-434. �10.1051/jphyscol:1989554�. �jpa-00229584�
JOURNAL DE PHYSIQUE
Colloque C5, supplkment au n05, Tome 50, mai 1989
MORPHOLOGICAL ASPECTS OF SILICON CARBIDE CHEMICALLY VAPOR-DEPOSITED ON GRAPHITE
A. PARRETTA, A. CAMANZI, G. GIUNTA, V. ADONCECCHI, P. ALESSANDRINI and A. MAZZARANO*
Eniricerche S.P.A., via E. R a m a r ~ i , 32, 1-00015 Montorotondo, Rome, Italy
'~entro Sviluppo Materiali. via di Caste1 Romano 100, I-00129 Rome,Italy
Abstract : The morphological features of silicon carbide coatings, deposited on graphite from SiCl,, C,H, and H, mixtures, were investigated.
Based on preliminary thermodynamic calculations, the experiments were performed at atmospheric pressure in a cold wall reactor by varying the deposition temperature T, in the 1473-1673 K range and the deposition time between 10 and 120 min. SEM examinators showed considerable differences in surface morphology depending on the process parameters. A transition from a modular to a faceted structure was observed by moving towards higher T, values. A double layer structure was detected on the thickest coatings due to a sharp columnar-microcrystalline transition. The coatings prepared at T
-
1673 K showed surface microhardness values as high as 4000 HK and an optimum capability to protect graphite substrates against oxidation at 1273 K.Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/jphyscol:1989554
