STP50N06FI
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
■
TYPICAL R
DS(on)= 0.022
Ω■
AVALANCHE RUGGED TECHNOLOGY
■
100% AVALANCHE TESTED
■
REPETITIVE AVALANCHE DATA AT 100
oC
■
LOW GATE CHARGE
■
HIGH CURRENT CAPABILITY
■
175
oC OPERATING TEMPERATURE
■
APPLICATION ORIENTED CHARACTERIZATION
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
SOLENOID AND RELAY DRIVERS
■
REGULATORS
■
DC-DC & DC-AC CONVERTERS
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
TO-220 ISOWATT220
TYPE VDSS RDS ( on) ID
STP50N06 STP50N06FI
60 V 60 V
< 0.028Ω
< 0.028Ω 50 A 27 A
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Val ue Unit
STP50N06 STP50N06FI
VD S Drain-source Voltage (VGS= 0) 60 V
VDG R Drain- gate Voltage (RGS= 20 kΩ) 60 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (cont inuous) at Tc= 25 oC 50 27 A
ID Drain Current (cont inuous) at Tc= 100 oC 35 19 A
ID M(•) Drain Current (pulsed) 200 200 A
Ptot Total Dissipation at Tc = 25oC 150 45 W
Derating Factor 1 0.3 W/oC
VISO I nsulat ion Withstand Voltage (DC) 2000 V
T St orage Temperat ure -65 to 175 oC
1 2 3
1 2 3
THERMAL DATA
TO-220 ISOWATT220
Rthj-cas e Thermal Resist ance Junct ion-case Max 1 3. 33 oC/W
Rthj- amb
Rt hc- sin k
Tl
Thermal Resist ance Junct ion-ambient Max Thermal Resist ance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
62.5 0.5 300
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbol Parameter Max Value Uni t
IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tjmax,δ < 1%)
50 A
EAS Single Pulse Avalanche Energy
(st arting Tj= 25oC, ID= IAR, VD D= 25 V)
400 mJ
EAR Repet itive Avalanche Energy
(pulse width limited by Tjmax,δ < 1%)
100 mJ
IA R Avalanche Current, Repetitive or Not-Repetitive (Tc= 100oC, pulse width limited by Tj max,δ < 1%)
35 A
ELECTRICAL CHARACTERISTICS (T
case= 25
oC unless otherwise specified) OFF
Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit
V( BR)DSS Drain-source Breakdown Voltage
ID= 250µA VG S= 0 60 V
IDS S Zero Gate Volt age Drain Current (VGS= 0)
VDS= Max Rating
VDS= Max Rating x 0.8 Tc= 125oC
250 1000
µA µA IG SS Gate-body Leakage
Current (VD S= 0)
VGS=± 20 V ±100 nA
ON (
∗)
Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit
VG S(th) Gate Threshold Voltage VDS= VGS ID= 250µA 2 2.9 4 V
RDS( on) St atic Drain-source On Resist ance
VGS= 10 V ID= 25 A
VGS= 10 V ID= 25 A Tc= 100oC
0. 022 0.028 0.056
ΩΩ
ID( on) On St ate Drain Current VDS> ID( on)x RD S(on) max 50 A
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit
td(on) tr
Turn-on Time Rise Time
VDD= 25 V ID= 25 A RG= 4.7 Ω VGS= 10 V (see test circuit, figure 3)
50 110
70 160
ns ns (di/dt)on Turn-on Current Slope VDD= 40 V ID= 50 A
RG= 4.7 Ω VGS= 10 V (see test circuit, figure 5)
460 A/µs
Qg
Qgs
Qgd
Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 40 V ID= 50 A VGS= 10 V 50 14 25
70 nC
nC nC
SWITCHING OFF
Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit
tr(Vof f)
tf
tc
Of f-voltage Rise Time Fall Time
Cross-over Time
VDD= 40 V ID= 50 A RG= 4.7 Ω VGS = 10 V (see test circuit, figure 5)
55 50 110
80 70 160
ns ns ns
SOURCE DRAIN DIODE
Symbol Parameter Test Condi tions Mi n. Typ. Max. Unit
IS D
ISD M(•) Source-drain Current Source-drain Current (pulsed)
50 200
A A
VS D(∗) Forward On Volt age ISD= 50 A VG S= 0 2 V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD= 50 A di/dt = 100 A/µs VDD = 30 V Tj= 150oC (see test circuit, figure 5)
150 0.45
6
ns µC A (∗) Pulsed: Pulse duration = 300µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Areas For TO-220 Safe Operating Areas For ISOWATT220
Thermal Impedeance For TO-220
Derating Curve For TO-220
Output Characteristics
Thermal Impedance For ISOWATT220
Derating Curve For ISOWATT220
Transfer Characteristics
Transconductance Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage Capacitance Variations
Normalized On Resistance vs Temperature Normalized Gate Threshold Voltage vs
Temperature
Turn-on Current Slope Turn-off Drain-source Voltage Slope
Cross-over Time Switching Safe Operating Area
Accidental Overload Area Source-drain Diode Forward Characteristics
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time
Fig. 1: Unclamped Inductive Load Test Circuits
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
A C D E
D1
L2
F1
TO-220 MECHANICAL DATA
DIM. mm inch
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.4 0.7 0.015 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.7 0.045 0.067
F2 1.15 1.7 0.045 0.067
G 4.95 5.2 0.195 0.204
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 0.630
L3 28.6 30.6 1.126 1.204
L4 9.8 10.6 0.385 0.417
L6 15.9 16.4 0.626 0.645
L7 9 9.3 0.354 0.366
Ø 3 3.2 0.118 0.126
A B D E
H G
L6
Ø F
L3
G1
1 2 3
F2
F1
L7
