P2N2222A Amplifier Transistors

Amplifier Transistors

NPN Silicon

Features

• These are Pb--Free Devices*

MAXIMUM RATINGS

Characteristic Symbol Value Unit

Collector--Emitter Voltage V_CEO 40 Vdc

Collector--Base Voltage V_CBO 75 Vdc

Emitter--Base Voltage V_EBO 6.0 Vdc

Collector Current -- Continuous I_C 600 mAdc

Total Device Dissipation @ T_A= 25°C

Derate above 25°C P_D 625

5.0 mW

mW/°C Total Device Dissipation @ T_C= 25°C

Derate above 25°C P_D 1.5

12 W

mW/°C Operating and Storage Junction

Temperature Range T_J, T_stg --55 to

+150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient R_θJA 200 °C/W Thermal Resistance, Junction to Case R_θJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

http://onsemi.com

P2N2222ARL1G TO--92 (Pb--Free)

5000 Units/Bulk Device Package Shipping^†

P2N2222AG TO--92

(Pb--Free)

2000/Tape & Ammo

ORDERING INFORMATION

COLLECTOR 1 2

BASE

3 EMITTER

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.

1 23

12

BENT LEAD TAPE & REEL

AMMO PACK STRAIGHT LEAD

BULK PACK

3 TO--92

CASE 29 STYLE 17

MARKING DIAGRAM

P2N2 222A AYWWG

G

A = Assembly Location Y = Year

WW = Work Week G = Pb--Free Package (Note: Microdot may be in either location)

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector--Emitter Breakdown Voltage

(I_C= 10 mAdc, I_B= 0) V_(BR)CEO

40 -- Vdc

Collector--Base Breakdown Voltage

(I_C= 10mAdc, I_E= 0) V_(BR)CBO 75

-- Vdc

Emitter--Base Breakdown Voltage

(I_E= 10mAdc, I_C= 0) V_(BR)EBO

6.0 -- Vdc

Collector Cutoff Current

(V_CE= 60 Vdc, V_EB(off)= 3.0 Vdc) I_CEX

-- 10 nAdc

Collector Cutoff Current (V_CB= 60 Vdc, I_E= 0)

(V_CB= 60 Vdc, I_E= 0, T_A= 150°C)

I_CBO

--

-- 0.01

10

mAdc

Emitter Cutoff Current

(V_EB= 3.0 Vdc, I_C= 0) I_EBO

-- 10 nAdc

Collector Cutoff Current

(V_CE= 10 V) I_CEO

-- 10 nAdc

Base Cutoff Current

(V_CE= 60 Vdc, V_EB(off)= 3.0 Vdc) I_BEX

-- 20 nAdc

ON CHARACTERISTICS DC Current Gain

(I_C= 0.1 mAdc, V_CE= 10 Vdc) (I_C= 1.0 mAdc, V_CE= 10 Vdc) (I_C= 10 mAdc, V_CE= 10 Vdc)

(I_C= 10 mAdc, V_CE= 10 Vdc, T_A= --55°C) (I_C= 150 mAdc, V_CE= 10 Vdc) (Note 1) (I_C= 150 mAdc, V_CE= 1.0 Vdc) (Note 1) (I_C= 500 mAdc, V_CE= 10 Vdc) (Note 1)

h_FE

3550 7535 100

5040

---- ---- 300

----

--

Collector--Emitter Saturation Voltage (Note 1) (I_C= 150 mAdc, I_B= 15 mAdc) (I_C= 500 mAdc, I_B= 50 mAdc)

V_CE(sat)

---- 0.3 1.0

Vdc

Base--Emitter Saturation Voltage (Note 1) (I_C= 150 mAdc, I_B= 15 mAdc) (I_C= 500 mAdc, I_B= 50 mAdc)

V_BE(sat)

0.6-- 1.2 2.0

Vdc

SMALL--SIGNAL CHARACTERISTICS Current--Gain -- Bandwidth Product (Note 2)

(I_C= 20 mAdc, V_CE= 20 Vdc, f = 100 MHz)C f_T

300 -- MHz

Output Capacitance

(V_CB= 10 Vdc, I_E= 0, f = 1.0 MHz) C_obo

-- 8.0 pF

Input Capacitance

(V_EB= 0.5 Vdc, I_C= 0, f = 1.0 MHz) C_ibo

-- 25 pF

Input Impedance

(I_C= 1.0 mAdc, V_CE= 10 Vdc, f = 1.0 kHz) (I_C= 10 mAdc, V_CE= 10 Vdc, f = 1.0 kHz)

h_ie

2.0

0.25 8.0

1.25

kΩ

Voltage Feedback Ratio

(I_C= 1.0 mAdc, V_CE= 10 Vdc, f = 1.0 kHz) (I_C= 10 mAdc, V_CE= 10 Vdc, f = 1.0 kHz)

h_re

---- 8.0 4.0

X 10^--4

ELECTRICAL CHARACTERISTICS

Characteristic Symbol Min Max Unit

SWITCHING CHARACTERISTICS

Delay Time (V_CC= 30 Vdc, V_BE(off)= --2.0 Vdc, I_C= 150 mAdc, I_B1= 15 mAdc) (Figure 1)

t_d -- 10 ns

Rise Time t_r -- 25 ns

Storage Time (V_CC= 30 Vdc, I_C= 150 mAdc, I_B1= I_B2= 15 mAdc) (Figure 2)

t_s -- 225 ns

Fall Time t_f -- 60 ns

Figure 1. Turn--On Time Figure 2. Turn--Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4 ns

*Total shunt capacitance of test jig, connectors, and oscilloscope.

+16 V

--2 V

< 2 ns 0

1.0 to 100ms, DUTY CYCLE≈2.0%

1 kΩ

+30 V 200

C_S* < 10 pF

+16 V

--14 V 0

< 20 ns 1.0 to 100ms, DUTY CYCLE≈2.0%

1 k

+30 V 200

C_S* < 10 pF

--4 V 1N914

1000

10 20 30 50 70 100 200 300 500700

1.0 k

0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700

I_C, COLLECTOR CURRENT (mA) h FE

,DCCURRENTGAIN

T_J= 125°C

25°C --55°C

V_CE= 1.0 V V_CE= 10 V

Figure 3. DC Current Gain

V CE

,COLLECTOR--EMITTERVOLTAGE(VOLTS) 1.0

0.8

0.6

0.4

0.2

0.0050 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50

I_B, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

T_J= 25°C

I_C= 1.0 mA 10 mA 150 mA 500 mA

Figure 5. Turn--On Time

100 200

50

t,TIME(ns)

10 20 70

5.0

100

5.0 7.0 30 50 200

10 30

7.0 20

I_C/I_B= 10 T_J= 25°C t_r@ V_CC= 30 V

t_d@ V_EB(off)= 2.0 V t_d@ V_EB(off)= 0

3.0

2.0 300 500

500

t,TIME(ns)

5.07.0 10 20 30 50 70 100 200 300

Figure 6. Turn--Off Time

10 20 70 100

5.0 7.0 30 50 200 300 500

V_CC= 30 V I_C/I_B= 10 I_B1= I_B2 T_J= 25°C t′_s= t_s-- 1/8 t_f

t_f

4.0 6.0 8.0 10

,NOISEFIGURE(dB) ,NOISEFIGURE(dB)

R_S= OPTIMUM R_S=SOURCE R_S=RESISTANCE I_C= 1.0 mA, R_S= 150Ω

500mA, R_S= 200Ω 100mA, R_S= 2.0 kΩ 50mA, R_S= 4.0 kΩ

f = 1.0 kHz IC= 50mA 100mA 500mA 1.0 mA 4.0

6.0 8.0 10

Figure 9. Capacitances

5.0 7.0 10

2.00.1

CAPACITANCE(pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 0.2 0.3 0.5 0.7

C_cb 20

30

C_eb

Figure 10. Current--Gain Bandwidth Product

70 100 200 300

50 500

f T,CURRENT--GAINBANDWIDTHPRODUCT(MHz)

1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100

V_CE= 20 V T_J= 25°C

Figure 11. “On” Voltages

0.6 0.8 1.0

0.2

V,VOLTAGE(VOLTS)

0

T_J= 25°C

V_BE(sat)@ I_C/I_B= 10

V_CE(sat)@ I_C/I_B= 10 V_BE(on)@ V_CE= 10 V

Figure 12. Temperature Coefficients

0 +0.5

COEFFICIENT(mV/C)

--1.0 --1.5

--2.5

°

RθVCfor VCE(sat)

RθVBfor VBE

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 1.0 V

--2.0

0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500

PACKAGE DIMENSIONS

TO--92 (TO--226)

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

R A

P

J L

B

K

G H

SECTION X--X V C

D

N N X X SEATING

PLANE DIM MININCHESMAX MILLIMETERSMIN MAX

A 0.175 0.205 4.45 5.20 B 0.170 0.210 4.32 5.33 C 0.125 0.165 3.18 4.19 D 0.016 0.021 0.407 0.533 G 0.045 0.055 1.15 1.39 H 0.095 0.105 2.42 2.66 J 0.015 0.020 0.39 0.50 K 0.500 --- 12.70 --- L 0.250 --- 6.35 --- N 0.080 0.105 2.04 2.66 P --- 0.100 --- 2.54 R 0.115 --- 2.93 --- V 0.135 --- 3.43 --- 1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM.

R A

P

J B

K

G

SECTION X--X V C

D

N X X

SEATING

PLANE DIM MILLIMETERSMIN MAX

A 4.45 5.20 B 4.32 5.33 C 3.18 4.19 D 0.40 0.54 G 2.40 2.80 J 0.39 0.50 K 12.70 --- N 2.04 2.66 P 1.50 4.00 R 2.93 --- V 3.43 --- 1

T

STRAIGHT LEAD BULK PACK

BENT LEAD TAPE & REEL

AMMO PACK

STYLE 17:

PIN 1. COLLECTOR 2. BASE 3. EMITTER

ON Semiconductorand are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice