• Aucun résultat trouvé

Kinetics and Energetics of Ge Condensation in SiGe Oxidation

N/A
N/A
Info
Télécharger
Protected

Academic year: 2021

Partager "Kinetics and Energetics of Ge Condensation in SiGe Oxidation"

Copied!
25
0
0

Chargement.... (Voir le texte intégral maintenant)

Texte intégral

Figure

Figure 1: The two different structures before oxidation. Si 0.8 Ge 0.2 is relaxed in structure 1 whereas it is epitaxially grown on silicon in structure 2.
Figure 2: Oxidation of SiGe and formation of a Ge-rich layer by condensation of the germa- germa-nium at the interface.
Figure 4: Oxide (top curve) and GRL (bottom curve) formation rates as a function of the inverse of the oxidation temperature
Figure 5: (a) Germanium concentration profiles measured by STEM-EDS analysis on cross sections of the Si 0.8 Ge 0.2 /UTSOI structure after oxidation at 750 ◦ C for different durations.
+3

Références

Télécharger maintenant ( PDF - 25 Page - 4.56 MB )

Documents relatifs