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The Polyx photovoltaic technology: progress and prospects
J. Fally, E. Fabre, B. Chabot
To cite this version:
J. Fally, E. Fabre, B. Chabot. The Polyx photovoltaic technology: progress and prospects.
Revue de Physique Appliquée, Société française de physique / EDP, 1987, 22 (7), pp.529-534.
�10.1051/rphysap:01987002207052900�. �jpa-00245572�
The Polyx photovoltaic technology: progress and prospects
J.
Fally (*),
E. Fabre(**)
and B. Chabot(***) (*) Ingénieur
aux Laboratoires de Marcoussis(**)
Directeurscientifique
ettechnique
à Photowatt(***) Ingénieur
àl’AFME,
av.E.-Hugues,
06565 ValbonneCedex,
France(Reçu
le 6 octobre1986, accepté
le 13 avril1987)
Résumé. 2014 Parmi les
multiples
filièresphotovoltaïques qui
sontenvisageables,
la filière silicium multicristallin obtenue parmoulage
delingots, connue
en France sous le nom de «procédé Polyx »,
est une desplus
prometteuses du fait des
performances
industriellesdéjà
obtenues et despotentialités importantes
d’évolutionen coûts et rendements de conversion
énergétique.
Leprocédé
d’élaboration deslingots
de silicium multicristallin àpartir
decharges
de siliciumpolycristallin
est décrit ainsi que latechnologie
dedécoupage
enplaques
minces et la réalisation de cellules et modules. Les rôlesrespectifs
de la recherche de base auxLaboratoires de Marcoussis de la
CGE
et de larecherche
etdéveloppement
en milieu industriel chez Photowatt sontanalysés.
Une évaluation descoûts
etprix
desmodules,
desgénérateurs
et duprix
du kWhactuels et futurs obtenus avec ce
procédé
estprésentée.
Lesapplications
et marchésphotovoltaïques
pourlaquelle
cette filière est la mieuxadaptée
sont décrits etanalysés,
ycompris
sousl’aspect
des transferts detechnologie.
Abstract. 2014 The so-called French «
Polyx
process » based on mouldedmulticrystalline
siliconingots
is one ofthe most
promising photovoltaic technologies
due to its present industrial state and itspossible improvements
related to costs and conversion
efficiency. Multicrystalline ingot processing
frompolycrystalline
feedstocksilicon, wafers,
cells and moduleprocessing
are described.Respective
rôles of basic research at Laboratoires de Marcoussis of CGE and of industrial R & D at Photowatt areanalysed.
An estimate of costs andprices
isgiven
formodules,
systems and energyproduced
both for present and for future state ofdevelopment
of thistechnology.
Adescription
and ananalysis
ofphotovoltaic
markets well suited to thistechnology
aregiven, including technology
transfer.Classification
Physics
Abstracts72.40
l. Introduction.
rhe
major photovoltaic technologies
in current use)r under
development
are based oncrystalline
,ilicon or on thin
layers
ofamorphous hydrogenated
,ilicon.
Approximately
threequarters
of the!0
peak
MW ofphotovoltaic
modules sold in 1985 isedcrystalline
silicon for so called « energy-re- ated »applications (from
a fewpeak
watts topeak- Megawatts),
while theremaining quarter
usedtmorphous hydrogenated
silicon for so-called« micro » and « mini » power
requirements ranging
)etween a few microwatts to a few
peak
watts,nainly
related toAlthough
twout of three
crystalline
silicon modules are stillusing nonocrystalline
siliconcells,
there is arapid growth
)f the market share of «
multicrystalline technology
»currently
used inEurope,
the USA andJapan.
In
France,
such atechnology,
called the« Polyx
process » is
currently being
marketedby Photowatt,
after
having
had the benefit of substantialsupport given
to the research anddevelopment
programs of the CGE MarcoussisLaboratories (originators
ofthe
process)
and of Photowattthrough
thephotovol-
taic
plan developed
andimplemented by
COMESand then
by AFME,
to which many CNRS anduniversity
laboratories also contributed. After adescription
of thepresent
state of progress of the process,prospects
forimprovement
andpossible
outlets will be examined.
2.
Description
of thePolyx
process and current results.Broadly,
the process involvesmaking multicrystal-
line silicon
ingots
frompolycristalline
silicon of theArticle published online by EDP Sciences and available at http://dx.doi.org/10.1051/rphysap:01987002207052900
530
Photo 1. - Mono and
multicrystalline ingots,
cells andmodules.
so-called « electronic
off-grade »
or« solar-grade » qualities,
thensawing
theselarge ingots
into 10 cmsided
bricks,
followedby wafering
into thinwafers, making
cells on these wafersand, finally,
theirencapsulation
into modules.Photograph
1 shows theappearance of
multicrystalline
siliconbricks, wafers,
cells and modules
alongside
the samecomponents
inmonocrystalline
silicon(round shapes).
We nowpropose to concentrate on the
original
feature of theprocess : i.e. the
production
ofingots through
direc-tional
crystallisation
controlled in aliquid encapsula-
tion crucible
which, through
anoriginal
method ofingot extraction,
allows the crucible to be re-used.Figure
1 shows theunderlying principle
of themoulding
andcrystallization
process. It was the increasedingot
size which was the most marked feature of the successive furnacesdeveloped.
In1980,
at the outset, the first fumace constructedby
Marcoussis Laboratories handled 0.5 to 2
kg ingots.
Since
ingot
size is a criticalparameter
inincreasing
Fig.
1. -Crystallization
method.Photo 2. - Industrial 50
kg polyx ingot casting
fumace.final
quantities
of usable materials and inachieving required productivity,
the Marcoussis Laboratories thendesigned
andproduced
a fumace which could cast20 kg ingots.
Themajor parameters
of theFig.
2. - Trend ofphotovoltaic
efficiencies obtained onPolyx
materials.process were then
optimized
in thisfumace,
whichwas then transferred to Photowatt in 1983
and,
onthe
basis
of theexperience acquired
with theseR&D
.furnaces,
the first industrialpilot
furnace wasdesigned by
Photowatt and becameoperative
at theend of 1984
(see photograph 2).
Industrial pro- ductionbegan
in 1985 and shouldrapidly expand.
Figure
2 summarises the mostsignificant
par- ameters of the processdeveloped by
MarcoussisLaboratories : it should
particularly
be noted that aphotovoltaic efficiency
of more than 12.5 % wasobtained on 100
cm2
cellsproduced by
the Photowatt standardprocess
frommulticrystalline
siliconingots
moulded
by
Marcoussis Laboratories from electronicoff-grade
silicon.Moreover,
trialsusing
silicon ofvarying origin
andquality
showed it waspossible
to define the chemicalspecifications
ofpolycrystalline
silicon suitable forproducing ingots
to be used to makephotovoltaic
cells with a
specified
averageefficiency rating.
Table I
gives specification
limits for finalphotovol-
taic
efficiency greater
than 11.5 %. It has also beenpossible
toquantify
the effects ofimpurities
onPolyx
wafers andfigure
3 shows the effect of suchimpurities
on cellsefficiency.
Cooperation
between Marcoussis Laboratories and Photowatt resulted in arapid
shift to industrialproduction. Thus, figure
4 shows trends inphotovol-
taic
efficiency
achieved in 1985 withlarge ingots (with
a massgreater
than 50kg permitting sawing
into 10 x 10 cm sided
bricks). Average photovoltaic efficiency
is now above 10.5 % and someingots
haveaverage
efficiency
of more than 11%,
with cellsgoing
over 12 % under standardmanufacturing
con-ditions.
Additionally,
therequirements
of industrialproduction
led Photowatt to make substantial efforts tooptimise
the process andapply appropriate
techni-cal solutions such as
ingot
extraction on an industrialTable I. - Silicon chemical
specifications
to obtainJSC >
27MA/CM2 (n
> 11.5%)
on 90% of
theheigth
of Polyx ingots (current process).
532
Fig.
3. - Influence ofimpurities
inPolyx
wafers on thephotovoltaic
parameters.Fig.
4. - Meanphotovoltaic efficiency.
scale,
reduction of thecomplete cycle
time to under20
hours, study
of continuousreloading
ofsilicon, optimisation
ofgraphite crucible, testing
and man-ufacturing
ofliquid encapsulators first
formulatedand
developed by
Marcoussis Laboratories.In addition
by 1984, Photowatt
hadalready
in-itiated a
development
program forsawing
bricks intowafers with
wire
saws, thussubstantially reducing required quantities
of siliconby influencing
both thethickness of the sawn wafers and the reduction of losses of material in the
wafering
process,applying
not
only
to kerf-loss width but also to a reduction oflayer
disturbance and ofwafering shrinkage.
Thiscost reduction factor is enhanced
by increased
pro-ductivity
and it is thuspossible
to achieve cellthicknesses of less than 400 microns with kerf-losses of less than 170 microns under standard
production
conditions,
withproduction
of 350 wafers in 5 h Recent trials have shown that it ispossible
to sav150 microns wafers with these wire saws and tc
manufacture cells and modules from these materials, 3.
Development prospects
for thePolyx
process.The process is far from frozen and has extensive
development potential.
Forinstance, photovoltaic efficiency
obtained undermanufacturing
condition5will
probably rise
to close to 14 %by 1990
andMarcoussis
Laboratories havealready
achieved ef-ficiency
levels of over 15 % on the total area oi 2 x 1 cm cells.Moreover, optimization
of the pro-cess with
particular regard
tocrystalline growth
conditions
resulting
in directionalsegregation
oiimpurities
shouldmake
itpossible
to use initialsilicon
which
is both less pure andless expensive.
In the
long
run,the
use ofinexpensive improved metallurgical grade could
becomepossible.
In thisconnection,
mention should be made of thestarting purification
of thematerial by
aplasma
processdeveloped by
ENSCPand
under currenttechnical
and economical evaluationby
Photowatt. Substantialimprovements
inproductivity
can also be obtainedby reducing
the duration ofmanufacturing cycles
and
by increasing ingot size,
in order toproduce
up to 120kg
ofingots
perday
and per furnace. Since the reduction, of cell thickness and of kerf-loss due to the use of wire saws will diminish thequantity
ofsilicon needed to
produce
acell,
asingle moulding equipment
will be able toproduce
more than2 peak MW
per annum.Finally,
cell andmodule production
will be able to benefit fromimprove-
ments in low-cost processes such as the
generalised
use of silk-screen
printing
whichshould, additionally,
facilitate
greater
automation.4. Economic
aspects.
Figure
5 shows thedevelopment
ofexisting
andforecast direct
manufacturing
costs ofmonocrystal-
line and
multicrystalline
siliconphotovoltaic
modulesfor two
periods :
1986 and1990,
with reference to«
monocrystalline
silicon » with associatedpurchase
of
corresponding monocrystalline
wafers in the mar-Fig.
5. - Modulesmanufacturing
costs.ket. The
comparison, relating
to units which have acapacity
close to 1peak
MW per annum, is based on acomputer
program forcomparing photovoltaic technologies developed by
AFME with the coopera- tion ofindustry
for theprovision
of cost data.It can be seen that the marked
reduction
in costsexperienced
inshifting
from currentmonocrystalline
to
multicrystalline
silicon will be further enhanced when the entire above-mentionedpotential
of thePolyx
process has been fulfilled.For
photovoltaic generators
to be used for com- monpractical applications
in the next few years, such astelecommunications
and the electrification of remote areas andcommunities, price
reductions of relatedsystems
will bepartly
offsetby
the influenceof far more static costs of
non-photovoltaic
elementssuch as
storage batteries, switchgear
and electro-mechanical
equipment
and of the infrastructure suchas module
support, cabling
and the relevant civilengineering
works. Be that as it may, theprice
reductions are substantial
and,
inparticular,
ifcompared
with the direct cost of similarmodules, .
are more marked than for modules based on a
technology
which does notproduce
such ahigh
module-related
photovoltaic efficiency,
i.e. 10 %currently
and 13.5 % in the medium term. In actualfact,
as is shown infigure 6, the
relativeweighting
ofproportional
cost lines to the area of modulesinstalled is no
longer marginal.
Fig.
6. -Systems prices.
This effect has also a marked effect upon
prices
ofelectric kWh delivered
by photovoltaic systems
of thesetypes.
Theexample given
infigure
7 is basedon the same
data,
for the sametype
ofapplications,
where
reliability
andlife-expectancy (already greater
than 20years)
are decisiveparameters
and on a real life caseinvolving
agenerator
of a fewpeak kW
installed in a remote
spot
in the south of France. It should be recalled that bothprice
levels and facilities(such
asself-sufficiency
andreduced maintenance) give
thistype
ofgenerator
acompetitive edge
interms or
up-dated
overall costs over conventional solutions such ashigh-capacity
chemicalbatteries,
lead-acid batteries and small internal combustion
engine generator
sets.Fig.
7. - kWhprices.
Thus,
for the electrification of remote areas andcommunities,
there is no doubt that thistechnology
will hold a
growing
share of thepower-generation
market in both the medium and
long
term,compared
with
competing technologies
such asmulticrystalline
silicon obtained from ribbon
drawing
oramorphous
silicon. It should be stressed that this is the
photovol-
taic market
segment
which has witnessed the mostconsistent
growth
in thepast
decadeand,
moreover, has thegreatest potential
for massgrowth,
due tothe tremendous needs to be
satisfied, particularly
indeveloping
countries.The
Polyx
process has theadvantage
ofbeing
ableto contribute both
directly
andthrough technology
transfers to the satisfaction of local market needs.
Transfers of
technology
can be achievedgradually, starting
from theencapsulation
of cells intomodules,
followedby
local cellproduction and,
where quan- tities so warrant,by integrated
manufacture ofingots
and wafers. In thelong
run, when the process has beenindustrially validated,
local use of initialmetallurgical grade
silicon with the above processes could becomepossible.
As a matter offact,
all thesestages
and processes arecompatible
insize,
forplants
which have an annualcapacity
of 1peak
MWor above.
5. Conclusion.
The
Polyx
process has beendeveloped
in France in atime span which is
comparable
or even better than inother countries which have also decided to
develop moulded-ingot multicrystalline
silicontechnologies,
i.e.
mainly
theUSA,
theFRG, Japan
andItaly.
Thekey
factorsunderpinning
this success have undoub-tedly
been :1)
the closecooperation
and com-plementarity
of the MarcoussisLaboratories,
Photo-watt and CNRS and
university laboratories,
fromthe initial research
stage
todevelopment
and indus-trialization of the process and
2)
the continuedsupport provided by public authority
to thesepart-
ners. Such a
system
canonly
bedeveloped
within along
time frame.The industrial
availability
of thistechnology,
andits
potential development,
aremajor
assets in ensur-ing
that the Frenchphotovoltaic industry (led by
534
Photowatt but also
involving
downstreamphotovol-
taic systems suppliers)
holds a choiceposition
in theworld-wide
competition
tosupply
electric power and.
related services to remote areas, for the
particular
benefit of