• Aucun résultat trouvé

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

N/A
N/A
Protected

Academic year: 2021

Partager "Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS"

Copied!
2
0
0

Texte intégral

(1)

3URELQJ'HIHFWVDQG,PSXULW\LQGXFHG(OHFWURQLF6WUXFWXUH&KDQJHVLQ6LQJOHDQG

'RXEOHOD\HU+H[DJRQDO%RURQ1LWULGH6KHHWVZLWK67(0((/6



40 5DPDVVH 1 $OHP 29 <D]\HY $ =HWWO &7 3DQ551DLU5-DOLO5=DQ8 %DQJHUW&56HDERXUQH$-6FRWWDQG.61RYRVHORY

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a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



$VLVWKHFDVHIRUJUDSKHQHWKHSODVPRQVWUXFWXUHRIVLQJOHDQGELOD\HUK%1LVTXLWHXQLTXHILJD :KLOH WKHVH YDOHQFH ((/6 UHVXOWV JHQHUDOO\DJUHHZLWK ab initio')7VLPXODWLRQVFDUULHGRXWZLWK :,(1NWKHGHWDLOHGVKDSHRIWKHFDOFXODWHGʌSODVPRQIRUSXUHK%1VKRZVVOLJKWGLVFUHSDQFLHV ZLWK H[SHULPHQWDO VSHFWUD ,Q SDUWLFXODU D VKRXOGHU V\VWHPDWLFDOO\ SUHVHQWDWa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

EO\DFKDQJHRIWKHʌ WRı UDWLRLQH[WUHPHO\JRRGDJUHHPHQWZLWK ab initioVLPXODWLRQVILJF

8QGHUVWDQGLQJ VXFK DWRPLF VFDOH FKHPLFDO DQG SK\VLFDO HIIHFWV LQ ' FU\VWDO PHPEUDQHV ZLOO QR GRXEWSURYHHVVHQWLDOIRUQDQRHQJLQHHULQJDWWUDFWLYHSURSHUWLHVIRUWKHVHQRYHOPDWHULDOV

1526

doi:10.1017/S1431927612009488 © Microscopy Society of America 2012Microsc. Microanal. 18 (Suppl 2), 2012

https://doi.org/10.1017/S1431927612009488

(2)

5HIHUHQFHV

>@ 5=DQHWDONanoletters   

>@ .1RYRVHORYHWDOProc. Natl. Acad. Sci. USA   >@ .:DWDQDEHHWDONature Materials   >@ 2/.ULYDQHNHWDONature    >@ &73DQHWDOPhys. Rev. B   >@ 7KLVZRUNZDVVXSSRUWHGLQSDUWE\WKH(365&86'2(XQGHUFRQWUDFW'($&&+ DQGWKH&HQWHURI,QWHJUDWHG1DQRPHFKDQLFDO6\VWHPVZLWKJUDQWQXPEHU((&

D 

 ),* (a) ([SHULPHQWDOVSHFWUDIURPVLQJOHOD\HU ERWKIURPDODUJHOD\HUDQGLQDORRIPRGHDWWKH HGJHRIDKROH GRXEOHOD\HUDQGEXON OD\HUV K%1$VKRXOGHUDWH9LVFOHDUO\YLVLEOHRQ WKH ʌ SODVPRQ DUURZ  EXW LV QRW UHSURGXFHG LQ VLPXODWLRQV RI SXUH K%1 (b)+LVWRJUDP LQWHQVLW\ DQDO\VLV>@RI+$$')LPDJHVUHYHDOVWKHSUHVHQFHRIaRI&DQG2LPSXULWLHV(c):,(1NFDO FXODWLRQRIDQ((/VSHFWUXP VROLGEODFNOLQH IURPDVWUXFWXUHVLPLODUWRWKDWRI E VKRZLQJWKDWWKH H9VKRXOGHUIURPH[SHULPHQWDOVSHFWUD JUH\OLQHDERYH LVZHOOUHSURGXFHG>@

D  E  F

           ),*(a)/RZSDVVILOWHUHG$')LPDJHRIWKHIROGHGHGJHRIDELOD\HUK%1VKHHW WKHQXPEHURI OD\HUVZDVLGHQWLILHGWKURXJK9((/6DQGE\FRQWUDVWDQDO\VLV 7KHODWWLFHUHOD[DWLRQDWWKHHGJHUH VXOWVLQVWUDLQLQGXFHGFRQWUDVW(b)(GJHRQPRGHORIWKHIROGHGVKHHWWKHUHOD[HGDWRPLFSRVLWLRQV ZHUHFDOFXODWHGE\')7(c)%K((/6VSHFWUDDFTXLUHGDWWKHSRVLWLRQVPDUNHGLQ D &OHDUʌ WR ı UDWLRGLIIHUHQFHVFDQEHREVHUYHGLQDJUHHPHQWZLWKab initio:,(1NFDOFXODWLRQV QRWVKRZQ 

E 

F 

Microsc. Microanal. 18 (Suppl 2), 2012 1527

https://doi.org/10.1017/S1431927612009488

Références

Documents relatifs

In this paper, we will show that, by improving our process in term of sintering conditions and chemistry of the system, we are now able to deliver

Corrugation of bilayer h-BN as a func- tion of lateral interlayer shifts: (a) Energy surface calculated with respect to the AA 0 stacking mode using the PBE þ vdW approach.. The

Taking into account few-layer systems, we investigate theoretically the effects of the number of layers on quasiparticle energies, absorption spectra, and excitonic states,

violates the symmetry of h-BN: since the hole is located on top of a nitrogen atom, the electron probability density should obey the threefold rotation symmetry of h-BN, unless

The binding energy of this peak increases strongly as the dimensionality is reduced from the 3-D bulk over the 2-D sheet to the 1-D tubes.. At the same time the quasi-particle band

Dynamic structure factor along three high symmetry lines in the first Brillouin zone ΓA, ΓK, and ΓM calculated in the GW-RPA (dashed lines) and from the solution of the BSE

At this energy the q-DAP ionization takes place following Equations (2)-(3) and results in the regime crossover from Raman to photoluminescence. This can be ionization of