Influence of the p-type doping on the radiometric performances of MWIR InAs/GaSb superlattice photodiodes

A crystalline-like organization of the molecules allows high current density but low luminance efficiency since an excessive electron current flow is involved compared to the

Using our RHEED controlled growth techniques, we find that in the InAs/GaAs system these materials grow in registration to the substrate, giving rise to a

(3), this SL resistivity fall lessens the measured voltage. According to Ref. 1, the sign of the photovoltage depends only on the nature of the SL surface layer. In this

Resume. — On demontre que les experiences de luminescence sont un moyen direct et sur pour etudier des proprietes des bandes de donneurs en champ magnetique fort. Les changements

The re- sults obtained on the Cart Pole Balancing problem suggest that the inertia of a dynamic system might impact badly the context quality, hence the learning performance. Tak-

Received: 24 August 2020; Accepted: 17 September 2020; Published: 18 September 2020 Abstract: In this paper, a full set of structural, optical and electrical

Index Terms— focal plane array, infrared detector, residual fixed pattern noise, performance evaluation, robust statistic, temporal stability, type-II superlattice..

By identifying and mod- eling the different dark current contributions using the software SILVACO, carrier lifetime value of about 30 ns was extracted from experimental curves at