Optical absorption spectrum of dilute U4+ impurities in incommensurate ThBr4 : lineshape analysis

the Landé factors of five excited states, our findings being in fair agreement with the results of recent crystal field

- Hyperfine coupling constants A for Dy160 in various metal hosts as determined by Mossbauer experiments against the conduction electron density of states at the

We have suggested [28] that crystal field parameter values can be slightly different for ground state levels due to a possible influence of the electron-phonon

IV when we fitted the Lorentzian to the experimental spectrum has now been understood within the same simple theory for Brownian motion by accounting for the finite sampling

The observation of very high damage thresholds for small incident laser spot sizes is consistent with damage being caused by localized impurities: when the spot

The ability of the H-solid Hz system to store energy as an in- sulator-hydride depends crucially on the overlap of the H atom probability density on neighboring H atom sites..

2014 The optical absorption in doped direct gap semiconductors in which the conduction band may be considered as a degenerate Fermi system is studied near

Abstract 2014 The density of states and the direct interband contribution to the imaginary part of the dielectric function (03B5b2(03C9)) of PdH are calculated The