FUNDAMENTALS OF THE PLASMA INDUCED AND ASSISTED CVD : PLASMA PARAMETERS CONTROLLING THE CHEMICAL EQUILIBRIUM, THE DEPOSITION KINETICS AND THE PROPERTIES OF THE FILMS

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

Abstract: During deposition of silicon fron Si/H-low pressure discharqe plasmas the decisive parameter controlling the formation of either an amorphous or crystalline phase is

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

2014 Spatially resolved spectroscopic diagnostics such as plasma-induced emission, laser-induced fluorescence and laser optogalvanic spectroscopy are used to

Molar flow rates of vibra- tionally excited H2 molecules and H atoms produced by the discharge are calculated.. Comparison

Time dependent cathode voltage (bottom panel) and current (top panel) of a discharge operating at a pulse width of 80 µs and a frequency of 5 kHz... The intensity of the

b) the discharge gap between two metallic electrodes connected in series with a localized resistance of a semiconductor electrode; c) the discharge gap between a metallic and