Temperature Dependence of 4H-SiC Ionization Rates Using Optical Beam Induced Current

Left: evolution with increasing fluences of the X-ray scattered intensity distribution along the surface direction close to the (0004) reflection of SiC implanted with 540 keV

It has been shown in this paper that trench technology is more affected by the V TH subthreshold hysteresis and that the phenomenon is enhanced with increasing

The partial ionization can still explain the difference; as the impurity concentration is one order of magnitude higher, the partial ionization cannot lower the effective

Structures were low reverse biased (-10V) to avoid trapping effects and current collapse [13]. Current collapse in the GaN devices prevents high speed OBIC measurements: a

It is expected that the data provided here will allow for a more accurate modelling of the gate current and of the charge injection in the oxide layer of power MOSFETs, leading to

Since the breakdown voltage of the diodes presented is about three times higher than that in the Zener diodes having mixed avalanche-tunneling breakdown [1-3] and

Interestingly the use of well-focused laser beam shows smaller features in the p + /MESA region, which were invisible with the previous test bench because of its low

In this paper, 4H- SiC bipolar diodes are studied in order to determine the minority carrier lifetime using OBIC method.. It consists in measuring the