Thin film microcrystalline silicon layers and solar cells : microstructure and electrical performances

On the other hand, the sides of the pyramids that are ini- tially flat appeared to have been hollowed by the treat- ment. This is the reason why the V-shaped valleys seen in Fig1.

For sample B (i-layer on sputtered ZnO), the thickness of the amorphous incubation layer is in the range of hundreds of nanometers, while for sample C (n–i–p cell on sputtered ZnO)

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The higher short-circuit currents under outdoor conditions indicate that the blue part of the clear sky spectra is enhanced leading thereby to a better performance of the

In the present paper, we report on thin-"lm microcrystalline silicon solar cells grown at high deposition rates on back-re#ectors with optimised light-scattering capabilities.

Indeed, if one uses SnO 2 -clad glass substrates (Asahi type U) for micromorph tandem cells, the bottom cell thickness must be approximately 1 mm (or more) thicker, in order to

As the normalized conversion efficiency of n–i–p mc-Si:H and of n–i–p micromorph silicon solar cells looks similar after proton irradiation and after the different annealing

Dependence of the open-circuit voltage (V oc ) of two silane concentration series of nip-type solar cells, as well as of various other nip- and pin-type mc-Si:H solar cells on