van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties

(a, b) Layer counting of epitaxial graphene on SiC(0001) by π-band analysis from photoemission (ARPES) images of the valence band structure measured at the K point of the

Atomic and electronic structure of trilayer graphene/SiC(0001): Evidence of Strong Dependence on Stacking Sequence and charge transfer... Here, for epitaxial graphene grown on SiC,

Hexagonal boron nitride is a promising substrate of graphene due to the lattice- match, the low surface roughness or the low density of charge traps.. Raman spectroscopy is a

The broad feature in the Raman spectrum around 1355 cm −1 can also be associated with peaks in the vDOS of the buffer layer that are due to flat phonon bands.. The phonon bands of

— By using the macroscopic theory of van der Waals forces, the surface free energy of a nematic liquid crystal and the interfacial free energy of a nematic on a glass substrate

Using this interaction model, molecular dynamics simulations were performed to study the structure of the interfacial layer of several ionic liquids at a flat iron surface,

To do this, we program the col- lector and the mutators in RtIR, and prove that their parallel composition preserves an invariant on global execution states, using the soundness

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