Study on fundamental defects and their effect on GaAs device properties

Abstract — Cu 2 ZnSnS 4 (CZTS) / CdS heterojunctions have been prepared by a successive deposition of CZTS and CdS thin films on glass substrates by spray pyrolysis and

It is shown that the family characteristics are also observed in the photoquenching effect (transitions between the normal and the metastable states) as well as

The different contributions to the present issue give an update on the understanding concerning this defect in the mid-1987 ; it includes EL2 related device

which decreases dislocation velocities, increases the flow stress of bulk single crystals and is correlated with a reduction of as-grown dislocation density. This

- We have calculated, in the second Born approximation, the conduction electron scattering rate due to impurity pairs with long range magnetic coupling in a non magnetic

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des

Laser induced picosecond transient gratings are used to study carrier transport i,ia free carrier and photorefractive nonlinearities in semi-insulating undoped GaAs and vanadium

Fig. The fact fringe system is not well defined, is related to a poor crystallogr quality of the layer. Nevertheless, the moire spacing, equal to 5.4 nm, that the