• Aucun résultat trouvé

Heider Dehdouh *, Mohamed Cherif Benachour , Rabah Bensaha , Mourad Zergoug TiO doped with nickel thin films Properties

N/A
N/A
Protected

Academic year: 2021

Partager "Heider Dehdouh *, Mohamed Cherif Benachour , Rabah Bensaha , Mourad Zergoug TiO doped with nickel thin films Properties"

Copied!
1
0
0

Texte intégral

(1)

TiO

2

doped with nickel thin films Properties

Heider Dehdouh

a,b,

*, Mohamed Cherif Benachour

a,b

, Rabah Bensaha

b

, Mourad Zergoug

a

aResearch Center in Industrial Technologies CRTI,P.O.Box 64, Cheraga 16014, Algiers / Thin Films development and Applications Unit (UDCMA),Sétif- Algeria.

b Ceramics laboratory, Frères mentouri-Constantine-1University, Road Ain El-Bey (25000) Constantine, Algeria

*Corresponding author. Email: h.dehdouh@crti.dz

Abstract

Thin films of un-doped and Ni-doped TiO2 were synthesized by the sol–gel dip-coating technique and deposited on glass substrates, for different annealing temperatures (from 400 °C to 500 °C). The X-rays diffraction and Raman show the formation of anatase phase, we also notice that doping with Ni influence the intensity of anatase peaks and decreases of grain sizes (from 24.3 to 15.23 nm). The nanostructure Ni- doped TiO2 thin films was observed AFM, which shows that the elaborated films are smooth and dense with Rms values of about 3 nm. The calculate values of refractive index of thin films increases from 2.22 to 2.38, and reduction in transmittance and band gap with the increase in the nickel concentration. Vibrating sample magnetometer results of un-doped TiO2 thin films reveal a ferromagnetic behavior at room temperature with Ms = 0.67 10-4 emu and low content of nickel doping leads to an enhancement of the saturated magnetic moment Ms =1.11 10-3 emu.

Références

Documents relatifs

Une méthodologie originale et moderne a été adoptée dans cette étude, les résultats ont décrit une bonne observance générale des équipes opératoires de la discipline

Vibrating sample magnetometer results of un-doped TiO 2 thin films reveal a ferromagnetic behavior at room temperature with M s = 0.67 10-4 emu and low content of nickel doping

Nickel oxide is a p-type semiconductor, is an important material because of its large direct optical gap between 3.6 and 4.0 eV; and easy to deposit in thin layers by many

Our results show that the structure and the grains size of our layers change when one varies the temperature of treatment as well as the number of steeping and the concentration

In contrast the Raman spectra show the presence of two phases’ anatase and brookite in the case of un-doped thin films and the disappearance of the brookite in those doped with

XRD diagrams illustrate that undoped and erbium doped TiO 2 crystallize in anatase phase only and indicate that the crystallite size decreases from 24.06 to 21.19 nm as a function

The reflectance spectra recorded for the Hg 2+ doped TiO 2 thin films annealed at different temperatures are shown in Figure.5.. The band gap was determined using

L’archive ouverte pluridisciplinaire HAL, est destinée au dépôt et à la diffusion de documents scientifiques de niveau recherche, publiés ou non, émanant des