Thermally Stable Ohmic Contact to p-Type 4H-SiC Based on Ti₃SiC₂ Phase

ue to its wide bandgap, high electric field strength and high thermal conductivity, but also to its technological maturity, Silicon Carbide (SiC) is the most

Some experiments were performed on p-type 4H-SiC epitaxial layers, with doping concentration of 2´10 19 at/cm -3 , in order to allow determination of the Specific

Lanthanide titanates thin films were grown on (110)-SrTiO 3 substrates by pulsed laser deposition.. This can be explained by i) the need for a higher

After optimization of the process through the surface preparation, the contact composition and the annealing, a reproducible ohmic contact with a specific resistance of 3×10 -5

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Like for the Ni/Ti/Al contacts we had an insulating layer formed on the edges of the TLM metal electrodes for Ni/Ti/Al/Ni samples, when the quantity of Ni was insufficient

After optimization of the process through the surface preparation, the contact composition and the annealing, a reproducible ohmic contact with a specific resistance of 3×10 -5

Tony Abi-Tannous, Maher Soueidan, G. Ferro, Mihai Lazar, Christophe Raynaud, et al.. Thermally stable ohmic contact to p-type 4H-SiC based on Ti3SiC2 phase.. Thermally stable