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Mesoscopic Description of Heterojunctions

R. Balian, D. Bessis, G. Mezincescu

To cite this version:

R. Balian, D. Bessis, G. Mezincescu. Mesoscopic Description of Heterojunctions. Journal de Physique

I, EDP Sciences, 1996, 6 (10), pp.1377-1389. �10.1051/jp1:1996142�. �jpa-00247251�

(2)

Mesoscopic Description of Heterojunctions

R. Balian

(*),

D. Bessis and G-A- Mezincescu

(**)

CEA

/DSM/Service

de Physique Théorique, CE Saclay, 91191 Gif-sur-Yvette Cedex, France

(Received

9 February1996, accepted 18 June 1996)

PACS.73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

PACS.71,10.-w Theories and models of many electron systems

PACS.73.20.Dx Electron states in low-dimensional structures

(superlattices,

quantum

well structures and

multilayers)

Abstract. Starting from the microscopic current associated with the single-electron wave

functions and using Wannier functions suitably

generalized

for nonperiodic heterostructures we

construct mesoscopic

(either

discrete or

continuous)

conserved currents associated with states

having components only in the considered band. This provides a rigorous basis to the ap- proximate envelope function approaches. As an application we analyze general one-dimensional heterojunctions, mapping explicitly the microscopic asymptotic states enta mesoscopic

(one-

band

envelope)

ones. This proves that, apart from the effective masses and the band offsets, the connection rules are characterized in general by three parameters, the values of which are

unconstrained, confirming the results of phenomenological analyses.

1. Introduction

The recent

developments

in trie

technology

of nanostructures

require

trie calculation of trie

electronic

properties

of devices which involve either

slowly varying compositions (graded

lat-

tices)

or

sharp

interfaces between dilferent materials,

especially

semiconductors.

Using directly

the

single-electron microscopic Schrôdinger equation,

with a

potential

which is

periodic

in each homogeneous piece of

crystal,

would be

uselessly complicated.

Current

approaches

get nid of the oscillations that occur in the wave function at the atomic

scale, by replacing

the micro-

scopic

wave function with a smoothed mesoscopic effective wave function. The

simplest

such

approach

is the effective-mass

approximation.

As

onginally

introduced

iii

it is based on the

assumption

that within each

piece

of material the energy of the electron lies close to a band

edge,

in which case the

microscopic

wave function is the

product

of the Bloch wave associated

with this band

edge

and a

slowly

varying continuous

envelope

function

(for

reviews and refer-

ences, see [2,3] For theoretical purposes we shall make use of a more

general procedure,

valid

throughout

the relevant

band,

and

relying

on a discrete mesoscopic wave function. This func- tion is here defined as the set of coefficients in the expansion of the

microscopic

wave function

(*j

Author for correspondence

(e-mail: zaf@spht.saclay.cea.fr)

(**) Present and perrJanent address: institutul de Fizica ài

Tehnologia

Matenalelor, C.P.

MG-1,

76900

Bucureàti, Màgurele, România

@ Les

Éditions

de Physique 1996

(3)

on the Wannier basis of the

band,

at least for each piece of

homogeneous

material

[4,5].

The continuous

envelope

function then appears as a natural

interpolation

of this discrete function.

The problem then arises to build the effective equations which govern trie

mesoscopic,

dis-

crete or

continuous,

wave function. This bas been achieved for

crystals

with a

slowly varying

composition

[6,7].

It was shown in that case that trie discrete wave function is trie solution of

an effective

Schrôdinger

equation. It was also

shown,

in trie special case of a

graded

semicon- ductor with a

non-degenerate band,

when trie electronic energy lies near trie local band

edge E(r),

that trie continuous

envelope

function is governed

by

an effective Hamiltonian of trie form

H~R ~2

=

-~V

~

~V+E(rj, ~l.lj

where

1/m"(r)

is trie local inverse effective mass tensor

(reducing

to a scalar for a

locally isotropic band).

If a

slowly varying

externat potential is

applied,

it should

simply

be added to

(1.1).

As noted

above,

trie

hypothesis

of a slow variation for trie composition of trie material is violated in a case of practical interest. Across a

heterojunction,

trie composition bas a

jump

over a

length

scale comparable with trie lattice size,

especially

when interfaces are built

by growing

a

crystal layer by layer.

In trie

slowly varying

case trie existence of

generalized

Wannier

functions bas been proven

ii,

8].

Assuming

that one can define

generalized

localized Wannier functions in trie presence of trie

interface,

which seems

plausible

but to our

knowledge

bas been achieved

only

in one-dimensional cases [9,

loi,

one can still use trie continuous

envelope description

wherever trie

corresponding

discrete

envelope

coefficients are

slowly varying.

For any reasonable

generalization

of trie Wannier functions m trie presence of a

sharp

interface

between

homogeneous media,

these will tend to the Wannier functions of the

corresponding homogeneous

material

sufficiently

far from the interface.

Here,

trie evanescent

(non spectral)

solutions which are needed for

matching

trie

microscopic

wave function and its normal derivative

across trie

junction

in two or more space dimensions will bave

decayed.

Trie microscopic

potential

is

(locally) periodic

and trie

heterojunction

can be felt at most

through

trie

slowly

varying potential of an eventual space

charge

associated with trie interface.

Thus, if trie two media separated

by

the

sharp

interface are

homogeneous,

an electronic

wave function within each one is

simply

a superposition of Bloch waves. More

generally,

if trie two media bave

slowly varying compositions,

trie

envelope

function in each'of them will

satisfy

a

Schrôdinger equation

with an effective Hamiltonian of trie form

(1.1). However,

trie form of trie effective equation in trie slab

containing

trie interface is still an open problem.

Even trie case when trie slab's thickness is

microscopic (comparable

to trie

spatial

extent of trie Wannier

functions),

so that we bave

only

to match

envelope

functions over trie

interface,

is not yet

completely

settled and bas been

intensely

discussed

(see,

for instance

[2,3]) By

using without

justification

trie effective Hamiltonian

il.l

across the

heterojunction,

one

might

infer (1) that the

envelope

function F must be continuous

(since

otherwise trie product m"~~ VF of

a step function

by

a à-function would be

meaningless);

and

iii)

that m"~~ VF must take trie same values on both

stries,

which

yields

a well-defined

jump

m trie normal derivative of F

(as

seen

by integrating

trie effective

Schrôdinger

equation over an mfinitesimal segment

lying

across trie

interface).

Trie

heterojunction

would then be characterized

only by

trie materai

constants

m",

E of trie two

homogeneous

media.

However,

it is easy to see that this procedure is

certainly

incorrect.

In

slowly graded materials,

trie

validity

conditions for trie form

il.l)

of trie effective Hamil- tonian are not violated if trie kinetic term is

replaced by

jm"°vm"-~°-ivm"°;

/~2

11.2)

(4)

trie value of a is immaterial

ii, iii

as

long

as trie variations are

sulliciently

slow.

Nevertheless,

a blunt use of

il.2)

across a

sharp junction

would

provide

as

boundary

conditions: (1) trie con-

tinuity

of m"°F, and

iii)

trie

continuity

of m"~~°~~Vm"°F.

Obviously,

since these conditions

depend

on a, the results which holà for

slowly graded

materials cannot be extended to

sharp

interfaces. A separate

study

of the

boundary

conditions at the interface is needed. There have been attempts to use the irrelevant in the

slowly graded

case parameter a for

describing

the

boundary

conditions. A dilferent answer has

recently

been

given

on

phenomenological grounds il ii

in the case of unstrained

interfaces,

for which the

crystal

groups of both

homoge-

neous media have in common a

subgroup

of two-dimensional discrete translations

parallel

to the

interface. It bas been shown that the

general matching

conditions for F and VF then

depend

on a Hermitean 2 x 2 matrix associated with the energy of the

sharp junction.

Trie interface is thus characterized

by

four real parameters

(three

in the case of time-reversai

invariance).

The 2 x 2 transfer matrix

describing

this connection rule has the property of

being

the

product

of a real unimodular matrix and a pure

phase

factor. The latter property had earlier been noticed

to

imply

current conservation at the

junction

[12]. Let us also mention a dilferent

approach involving

a non-conventional type of

envelope

functions, which are continuous

together

with

their

gradient

at an interface [3], in contradiction to the results below.

We return below to this

problem, focusing again

on unstrained

junctions

but

relying

now

on the

microscopic theory.

In Section 3, we show

by analyzing

the

general

one-dimensional

equations

that the

envelope

function and its normal derivative are discontinuous across a hetero-

junction.

Their values on both stries are related

by

means of a transfer matrix which represents

an intrinsic property of the

junction (Eqs. (3.14, 3.21)

for discrete

envelope

functions,

(3.22)

and

(3.24)

for their continuous

interpolation).

In

particular,

for a

heterojunction

between two semiconductors near a band

edge,

the transfer matrix is net determined

by

the effective masses

on both sides and the

jump

in the band

edge.

Whereas the

knowledge

of the local effective

mass m"

jr)

and the local band

edge E(r)

is sullicient to characterize a

slowly graded

medium, the presence of

sharp

interfaces introduces additional parameters. It should be noted that trie

envelope

functions

satisfy

a

Schrôdinger

equation with the effective Hamiltonian

(1.1) iocaiiy

on either side of the

junction,

but not

giobaiiy. Indeed,

we shall see

by

the end of Section 3 that the

matching

conditions described

by

the transfer matrix cannot be

represented by adding

to a Hamiltonian of the form

(1.1)

a

potential

which would be a distribution localized at the interface. Nor can

they

be

represented by

a

single

parameter o

entering

a unique Hamiltonian

as m

(1.2).

We shall find no other restriction on the transfer matrix than the constraints

imposed by

current conservation

(or self-adjointness

of the Hamiltonian from which the

probability

current conservation stems in quantum

mechanics) and,

in the absence of

magnetic fields,

time-reversai invariance. The transfer matrix that we obtain

by mapping

the exact

microscopic

solution onto the

envelope description

has the form and number of parameters

predicted

in

il ii by adding

a

phenomenological

contact energy to the kinetic energy.

Trie

replacement,

useful in

practice,

of the

microscopic

wave function

requires

of course that the

physical macroscopic quantities

which are calculated

using

the latter coincide with trie

ones obtained from the former. This

correspondence

within reasonable estimable errors

is inherent to the construction of the

envelope approximation

as

regards

the energy

eigenvalues

and scattering data. When

calculating

transition

probabilities

under the influence of electro-

magnetic

fields

by

means of the

envelope description

we assume

implicitly

that the

probability (or charge)

density and current obtained from the microscopic and

mesoscopic approaches

also coincide. As a

preliminary

step, we therefore express, in Section 2, within a

general framework,

the conservation of

probability

at the

mesoscopic level,

for

homogeneous crystals

as well as for

Don.homogeneous

materials. This will allow us to define a current

density

which is associated

(5)

with the

mesoscopic,

discrete or continuous, wave function, and which will

play

a central rôle in the discussion of Section 3.

2.

Mesoscopic

Current

Let us first wnte, in a uniform

crystal,

the correspondence between the

microscopic

and the mesoscopic

description

for electrons

belonging

to a

single

band. We shall treat the electrons as

independent partiales

and shall

disregard impurity

and

space-charge

elfects. If the considered band is

non-degenerate,

the Wannier functions

wj(r)

are deduced from one another

through

the lattice

translations,

and each one is locahzed around

a lattice site

Ri,

where denotes

a set of three

integers;

we

drop

the band index

throughout.

For a

degenerate band,

the energy

spectrum ek» and the Wannier functions

wj~(r)

involve in addition the branch index /t or u, and these functions are related to one another

through

operations of the lattice group.

They

are

expressed

in terms of the Bloch waves

~fik»(r)

as

where ~J denotes trie volume of trie Brillouin zone over which k is

integrated.

Time-reversai invariance

implies

ek»

" e-k», 1b(~ "

il-kV-

A suitable choice of trie

unitary

matrix

U(k)

makes trie Wannier functions

subject

to trie symmetries of trie crystal group, real and localized

in as much as

possible

around

Rj~,

within a range of trie order of a few lattice cells. Trie

center Rj~ may

depend

on u, for instance for Wannier functions located around lattice bonds

and symmetric or

antisymmetric

with respect to Rj~

[13,14].

A

microscopic

wave function in trie band bas trie form

lbir, t)

=

~j 4livit)Wivir)

,

(2.2j

and its components 4liv can be

regarded

as a discrete mesoscopic wave

function,

defined on trie

sites Riv rather than on trie fuit space r

[î].

Trie

Schrôdinger

equation for trie set 4l reads

~hj4~iv

=

~ (ÎU)H)Î'U')

Ah,v,,

(2.3)

1,v,

where trie matrix elements

(ÎUÎHÎfU~)

"

~j

~~~

/

dk

e~~'~~i~~~"w')U~~ (k)ek»U],~(k) (2.4)

~ Bz

of trie Hamiltonian bave trie same range in

)Riv

Ri,

v, as w

The

probability

)4livÎ~ satisfies the conservation law

fi

)4liv)~

~j ImÎ4l(~ (iu)H)i'u')

4lj,~,

= 0

(2 5j

i,v>

~ '

where each term

in the sum can be

mterpreted

as a current of

probability,

which flows from Ri~

to a site Ri,v,

lying

at a distance that does not exceed À. Since the mesoscopic wave function

is defined at the points Ri~, it is natural to introduce a discrete mesoscopic

density P(r)

+

~j

14~ivl~à

(r Riv)

12.6)

(6)

located at these

sites,

and a

mesoscopic

current

density

j(r)

e

~j ilt~~4l(~ (lu

H

i'u)

Ah>v,

(ILi,v, ILiv) /~ d(

à

jr (ILiv Il Î)Ri,v,) (2.7)

1v1'v' °

concentrated

along

the links which connect

neighbouring

sites. The conservation law

()

+ div J = 0

(2.8)

is then a consequence of

(2.5)

and of the

identity

à(r

IL) à

(r IL')

=

/ ~ d(

~ ô

(r (IL

(1

()IL')

dl

=

jR' R)

Vr

/~ dl

à

jr jR il j)R') (2.9j

o

The

mesoscopic

relation

(2.8)

is not

directly

related to the conservation law

ôpmi~/ôt

+ div Jmi~ = 0 between the

microscopic density

pmj~ = ~fi"~fi and the

microscopic

current

density

Jmj~ = Im hm~~~fi"i7~fi. However, the microscopic

description

and the less detailed

mesoscopic description

become

equivalent

at the

macroscopic

level, when ail

quantities

are smoothed

by

means of a convolution with a function which varies

slowly

on the scale À. In

fact,

pm~~ and p

yield

the same result after such a

smoothing;

this

equivalence

holds for the current densities Jm,~ and J, at least for

non-degenerate

bands

(a simple proof

uses the

identity lt~m~~

i7 =

ix, Hi

and the translational

invanance).

The above definitions contain some arbitranness. On the one

hand, depending

on the

crystal

group, the Wannier functions are not

always

defined

umquely

[14]. On the other

hand,

the discrete nature of trie wave function 4liv bas

suggested

trie definition of the localized

density (2.6).

We

might alternatively

have

spread

the

probability

)4livÎ~ over some

region surrounding ILiv,

for instance

spread

it

uniformly

over the

corresponding

Voronoi cell. We

might

also have

associated with the discrete set 4liv the smooth

interpolating

function

Fuir)

=

~

x

jr Jtiv)

4liv,

12.10)

which coincides with 4li~ at the lattice sites within a normalization

factor,

and which has no Fourier component outside the Brillouin zone. This

requires

to take as a

weight

x(r)

e

((2r)~~J]

~~~~

/

dk e~~'~,

(2.Il)

BZ

which is real and satisfies

j

dr

x

jr Riv)

x

(r Ri'v)

" ôi i' "

ix lRiv Ri'v) 12.12)

u~

This continuons

mesoscopic representation

maps a pure Bloch wave

~fik»(r)

onto trie

plane

wave

F)"(r)

=

(2r)~~/~U~~(k)e~k'~

With the mesoscopic density

p(r)

=

£~ )F~(r))~

we can

(7)

associate a conserved current

J(r)

=

~j ih~~ /

an

dr[F] (ri

x

(ri

ILiv

(lu

H

i'v')

x

(r[

ILi,~, F~,

(r[

ivi,v,

x

(ri

ri

/ dl

à

(r tri Ii f)rl)

o

~

=

~j h~~(2r)~~ /

ds

/

dk

/~ d(

e~~~'~

~~, ~ BZ 0

xF](r il ()s)F~,(r

+

(s)i7k (U~~(k)ek»U],~(k)]

,

(2.13)

constructed

by using (2.3), (2.9)

and

(2.10)-(2.12). Although

several

dilferent,

discrete or

continuons,

mesoscopic representations can thus be

defined, they

ail lead to a conservation law

(2.8),

with a mesoscopic current

density,

such as

(2.7)

or

(2.12),

which is

macroscopically

equivalent

to

Jmi~.

Whatever trie choice trie mesoscopic

description

requires

only

trie informa- tion about trie set 4livi while trie

microscopic

current

density

Jm~~ involves interband matrix

elements since i7~fi is not

a superposition of Bloch waves of trie considered

band,

a

mesoscopic

current is defined within this band

only.

Trie existence of a

mesoscopic

conserved current becomes useful when we turn to non-uniform crystals. Consider first a

graded

material with a slow variation on trie scale À. This case has been

elucidated I?i

by

means of a representation

(2.2)

in terms of

generalized

Wannier functions.

These are still localized in a

range of a few lattice constants, but are no

longer

deduced from one another

by translations,

except

approximately

for

neighbouring

sites. The discrete conservation law

(2.6)-(2.8)

remains

valid,

since the equation

(2.3)

on which it is based does not

rely

on trie existence of any order

in trie material. Trie

only

requirements are trie localization of trie functions wiv, and trie fact that these functions

wiv are

solely

connected to one another

by

trie Hamiltonian

H,

1-e-,

they

span an invariant

subspace

of H. Trie alternative representation

(2.10)-(2.13)

bas a more limited range of

vahdity,

due to trie

long

tait of trie

smoothing

function

(2.Il)

and to trie

underlying

periodic structure. It

froids, however,

in

asymptotically

uniform

regions.

We now turn to

sharp

interfaces. Trie existence of

generalized

Wannier functions

satisfying (2.2), (2.3)

and

having

ail

a short range is no

longer granted although

it is

suggested by

some

works

[9,10]. Nevertheless,

trie above

analysis

still froids far

enough

from trie

junction,

with two dilferent sets of localized Wannier

functions,

relevant to either side. Both trie

microscopic

and the mesoscopic currents are conserved across trie interface. Trie values of 4lj~ at

large enough

distances from trie interface should therefore be related in such a way that trie smoothed asymptotic values of

(2.7)

or

(2.13)

are trie same

on both stries for

stationary

states. We shall check this property in trie next section. While trie

mesoscopic dynamics

is

governed by

equations of trie form

(2.3), (2.4)

at a sullicient distance from trie

interface,

we shall write trie connection rules

across it, and shall see that

they obey

no other constraint than trie time-

reversal invariance and trie conservation of trie

mesoscopic

current

(2.7)

or

(2.13).

3. One-Dimensional

Heterojunction

From now on, we restrict ourselves to a one-dimensional system. This is

physically

relevant for actual

heterojunctions

when the whole lattice structure is invariant under discrete translations

along

two directions

parallel

to trie interface. In trie asymptotic

regions

x

- +cc, we have

two band structures, characterized

by

lattice constants

a+,

band energies

et,

Bloch

waves

~fi)(x)

and Brilloum zones )k) < na+ Since the

heterojunction

is

sharp,

we may assume that

(8)

electrons move in a

potential

which is

periodic

in a

region

x > b+ and in a

region

x <

b~,

and that the interface

region

b~ < x < b+ has a width of a few lattice cells. The Wannier functions

w/(x)

are localized within a distance of order around the sites

Xj+

e b+ +

ia+,

>

Àla+,

and the functions

w/ (xl

around

Xl

e b~ + ia~, <

-Àla~

A

microscopic

wave function

~fi(x,

t)

has on both stries the form

£~~~ 4l/(t)w/ ix)

,

x > b+ +

,

i~jX,t)

"

13'i)

£j~~ 4l/(t)w[(x)

,

x < b~

,

where 4l satisfies the mesoscopic

Schrôdinger equation

ià ~

~f

=

~ (i (H+ 1') ~), 13.2)

~~

i,

(1

H+ fj

=

É /

dk ~~ka~

Il-1')e)

,

(3.3)

2r Bz

for1 >

Àla+

and for1 <

-Àla~.

In order to describe the intermediate

region,

we have to return to the

microscopic

time-

independent Schrôdinger equation

at energy E. For the time

being,

we assume that E lies within both bands which are relevant for x > b+ and x < b~ This defines two

quasi-momenta k+,

such that

e)~

=

ej-

= E. For z > b+ and

x < b~, an

eigenfunction

~fi(x) of H is a linear combination of Bloch waves,

~llx)

=

/&

(A+~l)+ lx)

+

B+~l±~~ (x)j

,

x

é

b+

,

13.4)

where A+ and B+ are related to A~ and B~ The

corresponding mesoscopic

wave function

(3.1)

has for1 >

Àla+

and <

-Àla~

the form

4l)

=

ÀÀ (A+e~~~

(~~+~~~) +

B+e~~~~(~~+~~~)j (3.5)

of a

superposition

of two discrete

plane

waves with opposite momenta within the Brillouin

zone.

Accordingly

the

asymptotic interpolating

functions

(2.10)

reduce to

F+ ix)

=

A+e~~~~

+

B+e~~~i~ (3.6)

In each

asymptotic region,

both mesoscopic current densities

(2.î)

and

(2.13)

take the same value as trie

microscopic

current, and trie

matching

of the two forms of

(3.5)

should

imply

conservation,

namely

J "

(iA~i~ iB~ i~j ~~

"

(iA~

~

iB~i~)

v ,

13.7)

where

~+

e

de)~ /hdk+

denotes the group

velocity

on one side or the other.

Let us assume that this

matching

bas been achieved

by solving

the microscopic

Schrôdinger

equation

for ~fi(x) in trie region b~ < x < b+. For

our purpose, we need

only

to know trie values of ~fi(x) and its derivative at trie

point

b+ in terms of their values at b~, a relation characterized

by

trie

microscopic

2 x 2 transfer matrix t of trie interface at trie energy E. For convenience we

define it in terms of trie two-component vector

~l(x) (x

1b)

ilblx)i

OE = ,

13.8)

(h/2m)~l'Ix) 12h)~~ (xl ix, Hillb)

(9)

which allows us to express trie

microscopic

current

density

as

Jmiclx)

=

i~llx)i~a211blx)1 13.9)

(a2

is trie usual Pauli

matrix).

Trie form of trie

Schrôdinger

equation entails that the transfer

matrix t, defined

by

ll~

l~~)1

" ll~

l~~ll

'

(~'~°i

conserves the current, or

equivalently

that the Wronskian of two solutions is a constant. More-

over, time-reversai invariance

implies that,

if [~fi(x)] is a solution, [qfi(x)]" is also a solution.

Thus,

(1) the matrix t satisfies the

identity t~°2t

= a2

,

(3.Il)

expressing current conservation, and

iii)

it is real. These two properties

equivalently

mean that t is a real matrix with unit determinant. Otherwise t is

arbitrary,

as one can

easily

check

by solving

mortel

Schrôdinger

equations. Likewise the values

(3.4)

of [~fi(x)] at the periodic sites

Xj+

= b+ + ia+

ii

>

0)

and

Xp

= b~ + ia~

ii

<

0)

are related to one another

by

the two

transfer matrices

titi

(xiii ii

=

t+

titi

ixi+)1

,

13.12)

_~~

~fi" ~fii

j~j j~~ /fij

~fi

(~jj2

~ ~ ~ 2~fi k k k

t = cos ka +

j

sin ka

,

j

= j

,

(3.13)

~~ ~(Î~/~R~)

ÎIbÎ(~)Î~ ~~

lb~~Î(~)

which are real and have a unit determinant

(we dropped

in

(3.13)

trie index + in

k+, a+,

b+ and

~fi)).

Translational invariance in each

region

is

expressed by (j+)~

= -l, so that trie matrix

j+ depends

on two real parameters. If trie potential is symmetric with respect to trie sites b+ +

ia+,

its

diagonal

elements

vanish,

and it

depends

on one real parameter.

We wish to match trie mesoscopic wave functions

(3.5)

across trie junction. To this aim we relate them to trie microscopic functions for which this

matching

is achieved

through (3.10)

and

(3.12).

On

analogy

with trie last form of

(3.8),

we introduce for

sulliciently large

)i) trie

two-component

vector

~ ~~~

14lf

[4~i +

(~~)

,

(3.14) (2h)~~ ~i, (Xl X~Î) (1)H+ )1') 4l(

which again

provides

trie

mesoscopic

current

density, equal

to trie microscopic one Jmi~, as

[Ah]~ a2 (Ah]. Since trie

eigenfunctions

of trie mesoscopic Hamiltonian

(3.3)

bave trie form

(3.5)

which

imphes

that

£

(X~+

X()

(1

(H+ (1') 4l(

= ih

~+ÀÀ

(A+e~~~ ~Î B+e~~~~ ~Î

,

(3.15)

~,

they

are

generated

in trie asymptotic regions

by mesoscopic

transfer matrices T+

according

to

[~+

~n+

j~+j

1+1 l ,

(3_16j

0 2/~+

T+

= cos

k~a~

+

J~sin k~a+

,

J+

=

(3.17)

-~+

/2

0

(10)

Elimination of A+ and

B+

between

(3.4), (3.5), (3.8), (3.14)

and

(3.15)

allows us to define conversion matrices K+ which relate trie microscopic and

mesoscopic descriptions

for

large

ii

l~tl

"

~~

ll~

l~tll

'

(~'~~) (h/m~)Im ~fi[e~~kb~) -(2/~)Im ~fike~~kb~)

~~ ~

-(h/2m)Re ~fi[e~~kb~

Re ~fike~~kb~

~~~~~

the Bloch function is taken at trie

point b+,

and we

dropped

in

(3.19)

trie index + in

k+,~+

and

~fi).

Like ail trie transfer matrices, the conversion matrices

K+

are real and have a unit determinant. Moreover,

they

are related to t+ and

T+ through

K+t+

=

T+K+ (3.20)

Altogether,

for and )1')

sulliciently large,

1' < 0, we can thus relate trie

asymptotic

forms

of

4l/

and

4lp

on the two sides of the

junction by

means of

(3.10), (3.12), (3.18)

and

(3.20),

which

yield

the connection rule

l~tl

"

~~

l~~l~ l~~l~' l~~l~~ l~il l~'~~)

=

(cos k+la+

+

J+sin k+ia+) K+ta2K~a2 (cos

k~i'a~ J~sin

k~i'a~) [4ljj

The identity of trie

microscopic

and

mesoscopic

currents on either side is

implied by

trie fact that ail the 2 x 2 matrices involved are real and have a unit determinant. This was the reason

why

we introduced trie mass m in trie definition

(3.8)

and trie factor

(a+)~~/~

in trie definition

(3.14).

The

correspondence (3.21)

also froids for trie continuous envelope function

(3.6),

defined in

such a way that

F+lx)

[F+(x)]

e

(3.22)

(~+ /2k+) dF+ ix) /dx

coincides with

[4l)]

at trie sites x =

Xj+

We can now introduce trie

mesoscopic

transfer matrix T of the

junction.

We first choose a

point

b between b~ and

b+,

which charactenzes

a

precise

location for the

junction.

We then

extrapolate F+(x)

clown to b,

F~(x)

up to b,

by imagining

that the two

crystals

are

homogeneously

continued. The

mesoscopic

wave function

F(x)

is then

governed by

the

equations resulting

from

(3.21),

~~~

+

(k+)~ F+

= 0

,

x

é b, e)~

= E

,

(3.23)

[F+ (b)]

= T

[F~16)]

T =

É+ta2É~a2

,

(3.24)

where trie matrices

É+

are obtained from

K+ through

trie

replacement

of b+

by

b in trie

exponentials

of

(3.19).

We thus

find,

in

conjunction

with trie obvions

mesoscopic

wave equa-

tions

(3.23),

a

boundary

condition

(3.24)

which govems the discontinuities of

F(x)

and of its derivative across trie

junction

b between trie two

crystals.

Trie mesoscopic transfer matrix T, like trie

microscopic

transfer matrix t and trie transfer matrix

(3.21)

for discrete

envelope

functions, is real with unit determinant but bas in

generaJ

no other property. It is thus characterized

by

three real

parameters,

which moreover

depend

on trie energy E.

They

also

depend

on our somewhat

arbitrary

choice of trie precise location of

(11)

b within the

junction,

albeit in a trivial and smooth way. If we release time-reversai

invariance,

the transfer matrix T is the

product

of a

global phase

factor and a real matrix with unit

determinant;

this is the

general

form for

matching

conditions that

satisfy

current conservation [12]. Unlike the wave

equations (3.23),

the mesoscopic transfer matrix T does not

depend only

on the two materials in contact. It is a characteristic of the

heterojunction itself, depending

on

its

microscopic

structure. It is

directly

related to the S-matrix

describing

scattenng of Bloch

waves

by

the

junction,

and is

experimentally

accessible

through

transmission and reflection

measurements. Theoretical evaluations would

rely

on the determination of the

microscopic

transfer matrix t and of

(3.19), (3.24).

The equations

(3.23), (3.24)

refer to an electron with well-defined energy.

They

can be extended to

time-dependent

wave

packets having

a

sufficiently

small

spread

in energy around

a value Eo. For two

metals,

when the Fermi energy Eo lies within the bands,

(3.23) yields

the

time-dependent Schrôdinger

equation

ih~~

=

-£~~~

+

V+F+ (3.25)

m+ ~

m[

e

hk) /~)

,

V+

e

Eo m[ (~))~ /2 (3.26)

For a

semiconductor,

the average electronic energy

Eo

lies near a baud

edge El,

we have

et

ct

et

+

h~k~/2m[,

and the equations

(3.25), (3.26)

still hold.

They

would also be

easily

extended for two

slowly graded

materais with a

sharp

contact. As

regards

the

boundary

condition

(3.24)

at x = b, it is

legitimate

to

disregard

its

dependence

on

E, replacing ~+ /2k+

by h/2m+

in

(3.22)

and E

by

Eo in

T,

as soon as the

spread

in energy is small

compared

to the band

width,

and

(3.25)

is thus

simply supplemented

with

(3.24).

In this

approximation,

the mesoscopic current

density [Fi ta2 (Fi

reduces to the

expression

for free

partiales

with mass

mi.

In the

special

case when T has the form

Il

0 T =

,

(3.27)

9

a

single Schrôdinger

equation with a

à-potential,

ih)

=

) )

+ VF +

hgô(x b)F

,

(3.28)

where m" and

ôF/ôx

are step functions with

a

jump

at x = b, makes the

synthesis

of

(3.24)

and

(3.25). Likewise,

if the transfer matrix T is

diagonal

and positive, the two materials and their

junction

can be

represented by

a

single Schrôdinger equation

with a

singular

kinetic

energy of the form

il.2),

trie parameter a

being

defined as o

In(m[ /m[

= In Tii

" -In T22.

However,

in trie

general

case, there is no

single Schrôdinger

equation that accounts for trie

mesoscopic dynamics

across the

junction.

The occurrence of a

discontinuity

for the

mesoscopic

wave

function,

while trie

underlying microscopic

wave function is continuous, is

analogous

to a behaviour exhibited

long

ago for the gap function in

sharp normal-superconductor

junctions Î151.

In the case of a

heterojunction

between two semiconductors, when the energies are such that the

approximations et

ci

et

+

h~k~/2m[

hold on both stries. the

envelope

function F satisfies

(3.24), (3.25)

with V+

=

et,

the real matrix T

having

a unit determmant. The above microscopic

study

then confirms the result of our

phenomenological approach il ii,

which

however used a

slightly

dilferent definition of T.

(12)

This

analysis

is aise relevant for surface bound states

lying

astride trie

heterojunction,

pro-

vided

they

extend over a suilicient number of lattice cells. The values of ~+ in

F+(x)

c~

exp

[~~+(x

b)] are then

given

for T12

#

0

by

~~

~~.

~

~).

=

Et Ei 13.29)

~ ~ ~

lÎÎÎ~

~~ ~

~~~ ~ÎÎÎ[ ~~

~

~~~

' ~~'~~~

with ~+ > o, ~~ > 0. For

et

>

ep, letting

~y +

[(et ep) /2m[)~~~,

we find

by

means of a

graphical

solution two such bound states for

T21/Tii

< -~y,

TiiTi2

< 0, one bound

state for

(Tii'f

+

T21)T12

< 0, and none for

T21/Tii

> -~y,

TiiTi2

> 0. For T12 = 0, we

find one bound state for

T21/Tii

< -~y, none for

T21/Tii

> -~y.

However,

in the limit as T12 - 0 with

TiiTi2

< 0, one solution of

(3.29), (3.30) yields

a bound state with

binding

energy

large

as 2

(Tii/Î

+

T22/Î)~/T)~.

This feature indicates

that, although

trie transfer

matrix T involves three

independent

parameters, their range of variation is not

arbitrary

if trie

microscopic potential ion

which

they depend through É+

and

t)

is bounded from below. Note

finally

that

complex

solutions of

(3.29), (3.30)

Inay describe

junction

resonances.

4.

Concluding

ILemarks

The

one-band,

mesoscopic

envelope-coefficients approach

for

describing

electromc states in

heterostructures,

with its

low-energy

version the effective mass

approximation provides

a framework in which one can compute the behaviour of

complex multijunction

structures. In

fact,

treatments

using

more

precise approximations

exist, but

they

are

presently

restricted to few

junctions.

In the

envelope

function

apprôach

the structure is characterized

by

the local effective masses, the values of baud

edge energies

and the connection rules for trie wave functions at

sharp junctions.

These parameters of trie

phenomenological theory

should

eventually

be

derivable from trie

microscopic

calculations of

simple

non-uniform structures.

The purpose of our

analysis

has been to

clarify

these issues. We

rely

on the existence of a localized basis set offunctions

(generalized

Wannier

functions)

which is

complete

in the energy range of an isolated band in a non-uniform heterostructure.

Although

an abstract

proof

of trie

existence of

generalized

Wannier functions for many

non-periodic

systems of interest bas been known for some time [8],

explicit

constructions are available

only

in some

particular

cases

[7,9].

We

hope

and believe

that,

while

technically difficult, exphcit

construction will be

successfully

undertaken in more

complicated

cases.

Assuming

trie

generalized

Wannier functions to be

given,

we bave constructed for any state

a discrete in-band current

density, equation (2.7),

then a

(non-uniquely)

smoothed one, equa- tion

(2.13).

Both

satisfy

trie exact conservation law, which holds for

arbitrary

states within trie band. This should be contrasted with trie

usually

considered expressions for trie mesoscopic currents, associated to trie

(continuons) envelope

function, which are

only approximately

valid when trie

envelope

is

slowly varying,

for states localized in a narrow energy interval either near

a band

edge (semiconductors),

or near trie Fermi level

(metals). Actually

we bave shown that trie average values of all trie current densities coincide for states

having

components

only

m

the energy ranges relevant to each of the

envelope approximations

considered.

For

slowly graded heterostructures,

where a

perturbative

construction of the Wannier func- tions exists

iii,

our

analysis provides

rigorous results which

complement

the

existing

ones.

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